Cathodoluminescence Scanning Microscopy

On the origin of intense luminescence at 0.93 eV from multi-crystalline silicon

“…Detectable signal of Di radiation was observed even at beam currents below 10 pA, whilst typical values necessary for detection of BB luminescence are in the range of several 10 nA-100 nA. 35,38 Moreover, the radiative and the total recombination rates show similar temperature behavior, and the sites of high radiative recombination coincide spatially with those of high total recombination. Therefore it is possible to suggest that the radiative processes prevail in the total recombination.…”

Spectroscopic Evidence for Exceptional Thermal Contribution to Electron Beam-Induced Fragmentation

“…When a semiconductor is illuminated by an electron beam, a small fraction of the incoming electrons create electron−hole pairs which can then recombine, emitting a photon with the characteristic energy of the bandgap. Because semiconductor bandgaps predictably shift to lower energy with increasing temperature, the resulting band gap CL spectrum reflects the local temperature . However, the peak emission energy of a semiconductor can be significantly shifted by electronic as well as thermal effects .…”

“…Because semiconductor bandgaps predictably shift to lower energy with increasing temperature, the resulting band gap CL spectrum reflects the local temperature 21 . However, the peak emission energy of a semiconductor can be significantly shifted by electronic as well as thermal effects 22 .…”

Nondestructive Identification of Internal <i>α</i>-alumina Scales on Heat-resistant Ni–Al Alloys Based on Cathodoluminescence Spectra

“…16) The electron gun of the SEM device is used to bombard the surface of a material with electrons, and spectra and projection images of the induced light emissions can be used for analysis of areas ranging from millimeter to micrometer scales. [17][18][19][20][21][22] CL spectra of a heat-treated Ni-Cr-Al alloy surface were previously used to identify internal α-Al 2 O 3 scales beneath Cr 2 O 3 scales with a thickness of up to ~3-μm; a CL peak was observed at 695 nm 23,24) that originates from the substitution of chromium(III) ions (Cr 3 + ) included as impurities for aluminum(III) ions (Al 3 + ) in α-Al 2 O 3 scales. [25][26][27] However, wider application of the SEM-CL technique requires demonstrating that it can identify internal α-Al 2 O 3 scales beneath multiple types of scales.…”