Maßgeschneiderte Verpackungslinien schneller konstruieren und in Betrieb nehmen: Daran arbeitet der amerikanische Verpackungshersteller WestRock mit einem durchgängig digitalen Engineering, einer Kernanforderung von Industrie 4.0. Vom ersten Mausklick an fließen alle Konstruktionsdaten in die „3DExperience“-Plattform von Dassault Systèmes ein. Die Softwarelösung „Open Core Engineering“ von Rexroth verbindet diese virtuelle Simulation mit der realen Maschinenwelt. Dadurch kann die Steuerung die Daten und Befehle der Simulation interpretieren und korrekt umsetzen. Noch bevor die ersten Maschinenmodule montiert werden, überprüfen und optimieren die Konstrukteure sämtliche Bewegungen und programmieren die Steuerung. Wenn die Maschine beim Kunden in Betrieb genommen wird, können die Techniker so eine schnellere und effizientere Inbetriebnahme sicherstellen.
Defects in form of dislocations at the interface and threading arms in the film as well as SiGe intermixing are the main mechanisms to release the crystallographic misfit strain in Germanium (Ge) heterostructures grown on the mature Silicon (Si) wafer platform, severely deteriorating thereby the superior optoelectronic properties of Ge for device applications. We demonstrate here a novel technique, enabling fully coherent, high Ge content islands on nano-tip patterned Si (001) substrates by the suppression of plastic relaxation as well as SiGe intermixing. The Si-tip patterned substrate, fabricated by complementary metal-oxide-semiconductor (CMOS) compatible nanotechnology, features ~50 nm wide Si tips emerging from a SiO2 matrix and arranged in an ordered lattice. Molecular beam epitaxy (MBE) growths result in Ge nano-islands with high selectivity and having homogeneous shape and size. The ~850°C growth temperature required for ensuring selective growth has been shown to lead to the formation of Ge islands of high crystalline quality without extensive Si intermixing (with 91 at.% Ge). Nano-tip patterned wafers result in geometric, kinetic diffusion barrier intermixing hindrance (in particular surface diffusion suppression) confining the major intermixing to the pedestal region of Ge islands where kinetic diffusion barriers are however high. Theoretical calculations suggest that the self-assembled thin SiGe layer at the interface plays nevertheless a significant role in realizing fully coherent Ge nano-islands free from extended defects especially dislocations. Finally, single layer graphene (SLG)/Ge/Si-tip Schottky junctions were fabricated and thanks to the absence of extended defects and SiGe intermixing in the Ge islands, high performance photodetection characteristics with responsivity and Ion/Ioff ratio of ~45 mA/W and ~103, respectively, are demonstrated.
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