2012
DOI: 10.1016/j.apsusc.2012.02.085
|View full text |Cite
|
Sign up to set email alerts
|

Lithographically patterned silicon nanostructures on silicon substrates

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
3
0
3

Year Published

2013
2013
2020
2020

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 10 publications
(6 citation statements)
references
References 33 publications
0
3
0
3
Order By: Relevance
“…The combination of modern lithography techniques and MACE provide a solution to fabricate ordered and patterned SiNWAs with controlled diameter, length and density. This two-step strategy includes (i) pre-patterning silicon substrate by laser interference lithography, [21][22][23][24] nanosphere lithography, [25][26][27] electron beam lithography, 28 block copolymer lithography 29 and photolithography, 30,31 and (ii) etching selective areas of silicon to achieve well-dened SiNWAs. Several typical fabrication processes of patterned SiNWAs are illustrated in Fig.…”
Section: Patterning Of Sinwasmentioning
confidence: 99%
“…The combination of modern lithography techniques and MACE provide a solution to fabricate ordered and patterned SiNWAs with controlled diameter, length and density. This two-step strategy includes (i) pre-patterning silicon substrate by laser interference lithography, [21][22][23][24] nanosphere lithography, [25][26][27] electron beam lithography, 28 block copolymer lithography 29 and photolithography, 30,31 and (ii) etching selective areas of silicon to achieve well-dened SiNWAs. Several typical fabrication processes of patterned SiNWAs are illustrated in Fig.…”
Section: Patterning Of Sinwasmentioning
confidence: 99%
“…By combining catalytic etching and a) Electronic mail: divan@anl.gov nanosphere lithography, large scale fabrication of SiNW arrays with controlled location was demonstrated. 26,27 A commonly reported drawback of the MacEtch technique is the lateral migration of the metal structures during etching, resulting in deformed or totally contorted Si structures. 24 Large areas of high-density SiNW arrays were produced by MacEtch of silicon by using porous anodic aluminum oxide as a patterning mask for the noble metal.…”
Section: Introductionmentioning
confidence: 99%
“…Actualmente ha crecido el interés por la fabricación y caracterización de nanoestructuras de silicio, entre las que se incluye nanohilos, pilares, tubos, conos y partículas, estas se han estudiado ampliamente debido a sus propiedades físicas y aplicacioneś unicas en el desarrollo nanoelectrónico, nanofotónico, fotovoltaico y optoelectrónico [14,15]. Aunado a esto se ha trabajado la elaboración de múltiples dispositivos como baterías, paneles solares, detectores, sistemas termoeléctricos, sensores químico-biológicos, microfluidos, etc., que utilizan dichas estructuras de silicio [16].…”
Section: Uso Y Diseño De Las Nanoestructuras De Silicio (Nesis)unclassified
“…Existen diversos métodos para generar estas nanoestructuras entre los que se puede mencionar el método de crecimiento vapor-líquido-sólido (VLS), la ablación con láser, la descomposición por evaporación térmica, la deposición de vapor químico, entre otros. Sin embargo, la mayoría de estos requieren largos tiempos de síntesis y altas temperaturas debido a la limitación de su mecanismo de crecimiento [16].…”
Section: Uso Y Diseño De Las Nanoestructuras De Silicio (Nesis)unclassified
See 1 more Smart Citation