Methods and Materials in Microelectronic Technology 1984
DOI: 10.1007/978-1-4684-4847-4_9
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Lithographic Materials

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Cited by 5 publications
(2 citation statements)
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“…These works highlight the advantages of o-NBE links in photoresists compared to conventional ones that employed moieties that are unusable at wavelength shorter than 300 nm, such as novolak-quinone diazine [71,76]. Instead, with nitrobenzyl groups, being active to shorter wavelengths, it is possible to reduce light diffraction effect, thus, increasing the definition and resolution of the photoresist [77].…”
Section: Photo-responsive Acrylate and Methacrylate Polymersmentioning
confidence: 99%
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“…These works highlight the advantages of o-NBE links in photoresists compared to conventional ones that employed moieties that are unusable at wavelength shorter than 300 nm, such as novolak-quinone diazine [71,76]. Instead, with nitrobenzyl groups, being active to shorter wavelengths, it is possible to reduce light diffraction effect, thus, increasing the definition and resolution of the photoresist [77].…”
Section: Photo-responsive Acrylate and Methacrylate Polymersmentioning
confidence: 99%
“…As a further application, they were able to fabricate a field-effect transistor, in which an organic semiconductor material (pentacene) was patterned on the PEDOT: PSS coating. quinone diazine [71,76]. Instead, with nitrobenzyl groups, being active to shorter wavelengths, it is possible to reduce light diffraction effect, thus, increasing the definition and resolution of the photoresist [77].…”
Section: Photo-responsive Acrylate and Methacrylate Polymersmentioning
confidence: 99%