Lithium Niobate Thin Film Based A3 Mode Resonators with High Effective Coupling Coefficient of 6.72%

Zhang, Yi; Wang, Liang; Zou, Yang; Xu, Qinwen; Liu, Jieyu; Wang, Qing; Tovstopyat, Alexander; Liu, Wenjuan; Sun, Chengliang; Yu, Hong‐Yu

doi:10.1109/mems51782.2021.9375462

Cited by 12 publications

(7 citation statements)

References 18 publications

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Section: Fem Simulation Of Xbarmentioning

confidence: 99%

“…In our simulations, the thickness of the piezoelectric thin film and the gap between two adjacent electrodes remained the same; therefore, it is reasonable to assume that the series frequency remained almost constant. The effective electromechanical coupling coefficient (𝐾 𝑡 2 ) can be calculated using the following formula [21,22]: As shown in Figure 5, when P increased to 1 µm, K 2 t decreased sharply from 32% to 20.7%, and K 2 t then declined slowly with the increase in P from 2 to 11 µm. When P increased beyond 11 µm, K 2 t no longer changed.…”

Section: Fem Simulation Of Xbarmentioning

confidence: 99%

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Tunable Electromechanical Coupling Coefficient of a Laterally Excited Bulk Wave Resonator with Composite Piezoelectric Film

et al. 2022

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A resonator with an appropriate electromechanical coupling coefficient (Kt2) is crucial for filter applications in radio communication. In this paper, we present an effective method to tune the Kt2 of resonators by introducing different materials into a lithium niobate (LiNbO3) piezoelectric matrix. The effective piezoelectric coefficients e33eff and e15eff of composite materials with four different introduced materials were calculated. The results show that the e15eff of SiO2/LiNbO3 composite piezoelectric material was mostly sensitive to an increase in the width of introduced SiO2 material. Simultaneously, the simulation of a laterally excited bulk wave resonator (XBAR) with SiO2/LiNbO3 composite material was also carried out to verify the change in the Kt2 originating from the variation in e15eff. The achievable n79 filter using the SiO2/LiNbO3 composite material demonstrates the promising prospects of tuning Kt2 by introducing different materials into a LiNbO3 piezoelectric matrix.

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Section: Fem Simulation Of Xbarmentioning

confidence: 99%

Section: Fem Simulation Of Xbarmentioning

confidence: 99%

Tunable Electromechanical Coupling Coefficient of a Laterally Excited Bulk Wave Resonator with Composite Piezoelectric Film

et al. 2022

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“…27) However, the f s of XBAR is always affected by both the longitudinal (x-axis) mode and the vertical (z-axis) mode. With the coupling of the vertical and longitudinal mode, the resonant frequency f s of XBAR is given by: [28][29][30][31][32][33]…”

Section: Piementioning

confidence: 99%

Laterally-excited bulk acoustic wave resonator with an adjustable piezoelectric coupling coefficient

Wen

Xu²,

Liu³

et al. 2022

Jpn. J. Appl. Phys.

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This paper reports on a design journey for laterally-excited bulk acoustic wave resonator (XBAR) with adjustable piezoelectric coupling coefficient (K2). The vibration principle and resonant characteristics of XBAR are investigated by theoretical and simulation analysis, and the way to adjust K2 by introducing two grooves in the area between interdigital electrodes (IDEs) is proved to be effective by using finite element method (FEM) simulation and the Modified Butterworth-Van Dyke model with series capacitor Cr (MBVD-Cr) first, and then the impact of groove depth (Hg) and groove width (Wg) on K2 of XBAR is theoretically analyzed. Specifically, the K2 can be effectively adjusted by setting different values of Hg and Wg. After optimization, the maximum regulation range of K2 is from 2.02% to 45.05%. The fluted XBAR has a remarkable potential in building XBAR bandpass filter for specific frequency band, which greatly optimizes the XBAR filter design.

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“…In recent years, advances in film transfer technology have initiated a new era of research focused on thin-film-based acoustic resonators employing LiNbO 3 or LiTaO 3 materials. This groundbreaking approach has garnered significant interest and exploration [9][10][11][12][13][14][15]. Among the diverse cutting angles and acoustic modes, first-order antisymmetric (A1) 2 of 11 Lamb mode resonators based on Z-cut LiNbO 3 thin films offer a distinct advantage by simultaneously providing high v and high K 2 e f f value.…”

Section: Introductionmentioning

confidence: 99%

Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators with Support Structures

Zhang,

Jiang,

Tang

et al. 2024

Micromachines

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The piezoelectric thin film composed of single-crystal lithium niobate (LiNbO3) exhibits a remarkably high electromechanical coupling coefficient and minimal intrinsic losses, making it an optimal material for fabricating bulk acoustic wave resonators. However, contemporary first-order antisymmetric (A1) Lamb mode resonators based on LiNbO3 thin films face specific challenges, such as inadequate mechanical stability, limited power capacity, and the presence of multiple spurious modes, which restrict their applicability in a broader context. In this paper, we present an innovative design for A1 Lamb mode resonators that incorporates a support-pillar structure. Integration of support pillars enables the dissipation of spurious wave energy to the substrate, effectively mitigating unwanted spurious modes. Additionally, this novel approach involves anchoring the piezoelectric thin film to a supportive framework, consequently enhancing mechanical stability while simultaneously improving the heat dissipation capabilities of the core.

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Lithium Niobate Thin Film Based A3 Mode Resonators with High Effective Coupling Coefficient of 6.72%

Cited by 12 publications

References 18 publications

Tunable Electromechanical Coupling Coefficient of a Laterally Excited Bulk Wave Resonator with Composite Piezoelectric Film

Tunable Electromechanical Coupling Coefficient of a Laterally Excited Bulk Wave Resonator with Composite Piezoelectric Film

Laterally-excited bulk acoustic wave resonator with an adjustable piezoelectric coupling coefficient

Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators with Support Structures

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