Liquid-liquid equilibria and Gibbs energy of mixing for binary systems

Gocken, N.A.; Chang, E. T.

doi:10.1016/0036-9748(72)90176-7

Cited by 5 publications

(1 citation statement)

References 7 publications

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“…In the Al-In system, experimental data on the miscibility gap disagree with one another by as much as 115 • C near the critical temperature [5][6][7][8][9]. Gokcen and Chang [10] and Peres and Campos [11] computed the critical temperature 853 • C and 975 • C, respectively, by obtaining Gibbs energies of liquid phase based on phase boundary data only. Ansara et al [12] and Kaufman et al [13] obtained the critical temperatures 850 and 907 • C and the monotectics at 6 at.% In, 634 • C and at 7 at.% In, 622 • C by optimizing the Gibbs energy of the liquid phase with 7 and 4 parameters, respectively.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic assessment of the metastable liquidi in the Al–In, Al–Bi and Al–Pb systems

Kim

Sanders

2006

Modelling Simul. Mater. Sci. Eng.

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The metastable liquidi in the Al-In, Al-Bi, and Al-Pb systems were assessed through the thermodynamic modelling of the liquid miscibility gaps. The subregular solution model was applied to describe the Gibbs free energy of liquid phases and the interaction parameters were optimized using the phase diagram data. In addition, spinodal curves were assessed to predict the possible regions for metastable phases. The present results were compared and discussed with other experimental and assessed data available from the literature.

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Section: Introductionmentioning

confidence: 99%

Thermodynamic assessment of the metastable liquidi in the Al–In, Al–Bi and Al–Pb systems

Kim

Sanders

2006

Modelling Simul. Mater. Sci. Eng.

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Liquidphasen‐Epitaxie von Si‐dotiertem Al_xGa_1−xAs

Kühn

Lemke

Rentsch

et al. 1977

Cryst Res and Technol

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Liquidphasen-Epitaxie von Si-dotiertem Al,Ga,-,AsFur 850 "C und A'si = 0,04 und 0,l wurden die Liquidus-und Solidusisothermen des quaternaren Systems Ga-Al-As-Si abgeschatzt, Epitaxieschichten mit Hilfe des Abkuhlverfahrens hergestellt und der EinfluB des Siliciums auf die Wachstumsgeschwindigkeit untersucht. Aus der Messung des Hall-Effektes wurden Aussagen uber die Abhangigkeit der Storstellenkonzentration vom Si-Gehalt der Schmelze gemacht. Die Donatorionisierungsenergien variieren von 32 bis 69 meV und fallen proport(iona1 N;'$.The liquidus and solidus isotherms of the quaternary phase diagram Ga-Al-As-Si have been estimated a t 850 "C and Nsi = 0.04 and 0.1. Epitaxial layers were grown and the influence of silicon on the growth rate was investigated. Hall-effect measurements give informations on the dependence of the carrier concentration on the silicon content in the melt. The donor ionization energies vary from 32 to 69 meV and are diminished proportional to N ; /~.

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