Liquidphasen‐Epitaxie von Si‐dotiertem AlxGa1−xAs

Kühn, G.; Lemke, Georg; Rentsch, Harald; Neumann, H.; Ernst, H.

doi:10.1002/crat.19770120206

Cited by 2 publications

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On the Concentration Dependence of the Thermal Impurity‐to‐Band Activation Energies in Semiconductors

Monecke

Siegel

Ziegler

et al. 1981

Physica Status Solidi (b)

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It is proved by Hall effect measurements on Te-doped GaP and on ZnSiP, that the thermal activation energies of the majority impurities depend on the minority impurity concentrations. A new theoretical explanation for this concentration dependence is presented.Mittels Halleffektmessungen an Te-dotiertem GaP und an ZnSiP, wird gezeigt, daB die thermischen Aktivierungsenergien der Majoritiitsstorstellen von der Konzentration der Minoritiitsstorstellen abhangen. Fur diese Konzentrationsabhiingigkeit wird cine neue theoretische E r k k u n g gegeben.It is well known that in doped and compensated semiconductors three types of conductivity mechanisms with different activation energies c3 < E~ < c1 can be found, in general (see e.g . [l]).To be specific we shall concentrate on a n n-type semiconductor in the following. I n this case c3 corresponds to the phonon-assisted hopping motion of electrons from neutral donors t o empty positive donors, the energy spread of the donor levels being caused by the fluctuating electric field of the charged impurities. This hopping motion is well understood on the basis of the theory of Miller and Abrahams The activation energy c1 is connected with the energy ED, necessary to excite an electron from a donor into the conduction band, and deviates from ED slightly due to the fact, that the temperature dependence of the mobility deviates from p -T P 3 l 2[5]. The energy E, or E D is of principle interest in semiconductor physics and technology. However, it is understood much less both theoretically and experimentally than cZ and E~: not only its absolute value for different impurities cannot be calculated theoretically in satisfying agreement with experimental results, but also its large concentration dependence (if measured as a thermal activation energy e.g. by Hall experiments) is not well established even experimentally as explained below.I n this paper we want to contribute both experimental results and a new theoretical explanation for the concentration dependence of E D of shallow impurities.The phenomenon of the concentration dependence of the thermal activation energy of impurity electrons into the nearest host energy band is known for more than

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