Line width roughness accuracy analysis during pattern transfer in self-aligned quadruple patterning process

Lorusso, Gian; Ito, Osamu; Ohashi, T.; Sánchez, Efrain Altamirano; Constantoudis, Vassilios; Koshihara, Shunsuke

doi:10.1117/12.2218863

Cited by 9 publications

(7 citation statements)

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“…of CD scanning electron microscopy, such as averaging, field of view, and pixel size, for the determination of LER and LWR. 7 We have also demonstrated the interpretation and feed-forward of data from scatterometry to improve the control of pitch walk. 8 The performance of SAQP that we have achieved is quite close to the specifications of the technology.…”

Section: 1117/21201604006378 Page 3/3mentioning

confidence: 99%

Self-aligned quadruple patterning to meet requirements for fins with high density

Altamirano-Sánchez¹,

Tao²,

Gunay-Demirkol³

et al. 2016

SPIE Newsroom

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Section: 1117/21201604006378 Page 3/3mentioning

confidence: 99%

Self-aligned quadruple patterning to meet requirements for fins with high density

Altamirano-Sánchez¹,

Tao²,

Gunay-Demirkol³

et al. 2016

SPIE Newsroom

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“…Nevertheless, novel EUV resist platforms will undoubtedly employ radically different approaches to patterning, which will likely result in different characteristic LWR metrics. It is worth mentioning that the roughness transfer from the photoresist during plasma etching affects the spatial components of LWR in different ways, 4,5 which is of course of technological interest for process integration. For these reasons, this work provides a comparative study of the LWR performance of various photoresists according to the abovementioned metrics and an interpretation is proposed.…”

Section: -02mentioning

confidence: 99%

Comparative study of line roughness metrics of chemically amplified and inorganic resists for EUV

2016

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We present a comprehensive study of the roughness metrics of different resists. Dense line/space (L/S) images of polymethyl methacrylate (PMMA), hydrogen silsesquioxane (HSQ), different chemically amplified resists (CARs), and metal oxide based resists have been patterned by extreme ultraviolet interference lithography (EUV-IL). The three line width roughness metrics: r.m.s. value σ LWR , correlation length ξ and roughness exponent α, were measured by metrological analysis of top down SEM images and compared for the different resists imaged here. It was found, that all metrics are required to fully describe the roughness of each resist. Our measurements indicate that few of the state-ofthe-art resists tested here can meet the International Technology Roadmap for Semiconductors (ITRS) requirements for σ LWR. The correlation length ξ has been found to be considerably higher in polymer-based materials in comparison to non-polymers. The roughness exponent α, interpreted using the concept of fractal geometry, is mainly affected by acid diffusion in CARs where it produces line edges with a higher complexity than in non-CAR resists. These results indicate that different resists platforms show very different LWR resist metrics and roughness is not only manifested in the σ LWR but in all parameters. Therefore, all roughness metrics should be taken into account in the performance comparison of the resist, since they can have a substantial impact on the device performance.

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“…LER measurements done only by CD-SEM are no longer reliable when considering recent lithography advances; the determination of a new LER metrology method thus poses a new metrology challenge for 3-D device structures. 5 Two LER reference metrology techniques that offer a high-resolution sidewall profile and provide a reference standard 6 to evaluate CD-SEM have been proposed, including the use of transmission electron microscopy (TEM) [7][8][9][10] and atomic force microscopy (AFM). [11][12][13] The TEM technique involves preparing the sample using a focused ion beam instrument so that the *Address all correspondence to Ryosuke Kizu, E-mail: r-kizu@aist.go.jp horizontally sliced image of the line patterns, i.e., projected onto the xy plane, can be measured by TEM.…”

Section: Introductionmentioning

confidence: 99%

“…[11][12][13] The TEM technique involves preparing the sample using a focused ion beam instrument so that the *Address all correspondence to Ryosuke Kizu, E-mail: r-kizu@aist.go.jp horizontally sliced image of the line patterns, i.e., projected onto the xy plane, can be measured by TEM. [7][8][9][10] This technique allows for higher resolution due to less noise when compared with the conventional SEM technique, the simultaneous measurement of multiple line patterns in a field-of-view, and the analysis of actual devices. However, it is a destructive metrology technique.…”

Section: Introductionmentioning

confidence: 99%

Line edge roughness measurement on vertical sidewall for reference metrology using a metrological tilting atomic force microscope

Kizu

Misumi

Hirai

et al. 2020

J. Micro/Nanolith. MEMS MOEMS

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Line edge roughness (LER) measurement is one of the metrology challenges for three-dimensional device structures, and LER reference metrology is important for reliable LER measurements. For the purpose of LER reference metrology, we developed an LER measurement technique that can analyze LER distribution along the height of a line pattern, with high resolution and repeatability. A high-resolution atomic force microscopy (AFM) image of a vertical sidewall of a line pattern was obtained using a metrological tilting-AFM, which offers SI-traceable dimensional measurements. The tilting-tip was controlled with an inclined servo axis, and it scans the vertical sidewall along a line pattern with a high sampling density to enable an analysis of the LER height distribution at the sidewall. A horizontal cross-section of the sidewall shows sidewall roughness with sub-nm resolution. Power spectral density (PSD) analysis of the sidewall profile showed that the PSD noise in the high-frequency region was several orders of magnitude lower than the noise of typical scanning electron microscopy methods. AFM measurements were sequentially repeated three times to evaluate the repeatability of the LER measurement; results indicated a high repeatability of 0.07 nm evaluated as a standard deviation of LER at each height. © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Line width roughness accuracy analysis during pattern transfer in self-aligned quadruple patterning process

Cited by 9 publications

References 0 publications

Self-aligned quadruple patterning to meet requirements for fins with high density

Self-aligned quadruple patterning to meet requirements for fins with high density

Comparative study of line roughness metrics of chemically amplified and inorganic resists for EUV

Line edge roughness measurement on vertical sidewall for reference metrology using a metrological tilting atomic force microscope

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