LiNbO<sub>3</sub>Thin-Film Modulators Using Silicon Nitride Surface Ridge Waveguides

Jin, Shilei; Xu, Longtao; Zhang, Haihua; Li, Yifei

doi:10.1109/lpt.2015.2507136

Cited by 110 publications

(55 citation statements)

References 9 publications

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“…3c). This translates to a voltage-length product of 1.8 V·cm, an order of magnitude better than bulk LN devices [25,30] and significantly higher than previously reported LN thin-film devices because of the highly-confined electro-optic overlap [20][21][22][23][24][25][26].…”

mentioning

confidence: 74%

Nanophotonic lithium niobate electro-optic modulators

Wang¹,

Zhang²,

Stern³

et al. 2018

Opt. Express

517

319

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Since the emergence of optical fiber communications, lithium niobate (LN) has been the material of choice for electro-optic modulators, featuring high data bandwidth and excellent signal fidelity. Conventional LN modulators however are bulky, expensive and power hungry, and cannot meet the growing demand in modern optical data links. Chip-scale, highly integrated, LN modulators could offer solutions to this problem, yet the fabrication of low-loss devices in LN thin films has been challenging. Here we overcome this hurdle and demonstrate monolithically integrated LN electro-optic modulators that are significantly smaller and more efficient than traditional bulk LN devices, while preserving LN's excellent material properties. Our compact LN electro-optic platform consists of low-loss nanoscale LN waveguides, micro-ring resonators and miniaturized Mach-Zehnder interferometers, fabricated by directly shaping LN thin films into sub-wavelength structures. The efficient confinement of both optical and microwave fields at the nanoscale dramatically improves the device performances featuring a half-wave electro-optic modulation efficiency of 1.8 V∙cm while operating at data rates up to 40 Gbps. Our monolithic LN nanophotonic platform enables dense integration of high-performance active components, opening new avenues for future high-speed, low power and cost-effective communication networks.

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mentioning

confidence: 74%

Nanophotonic lithium niobate electro-optic modulators

Wang¹,

Zhang²,

Stern³

et al. 2018

Opt. Express

517

319

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“…Furthermore, SiN is CMOS compatible, which means that the deposition and etching of SiN are standard processes. Low loss SiN can be deposited on the surface of the LNOI by sputtering or plasma enhanced chemical vapor deposition (PECVD) . Using this fabrication approach, waveguide losses as low as ≈0.3 dB/cm and bending radii in the order of 200 μm were achieved for telecommunication C‐band wavelengths.…”

Section: Photonic Building Blocks In Lnoimentioning

confidence: 99%

“…Low loss SiN can be deposited on the surface of the LNOI by sputtering [28] or plasma enhanced chemical vapor deposition (PECVD). [55] Using this fabrication approach, waveguide losses as low as 0.3 dB/cm [28] and bending radii in the order of 200 μm [57] were achieved for telecommunication C-band wavelengths. Lower losses might be achievable by bonding SiN on LNOI, which was deposited by low pressure chemical vapor deposition (LPCVD).…”

Section: Optical Waveguidesmentioning

confidence: 99%

Status and Potential of Lithium Niobate on Insulator (LNOI) for Photonic Integrated Circuits

Boes

Corcoran

Chang

et al. 2018

Laser & Photonics Reviews

542

290

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Lithium niobate on insulator (LNOI) technology is revolutionizing the lithium niobate industry, enabling higher performance, lower cost and entirely new devices and applications. The availability of LNOI wafers has sparked significant interest in the platform for integrated optical applications, as LNOI offers the attractive material properties of lithium niobate, while also offering the stronger optical confinement and a high optical element integration density that has driven the success of more mature silicon and silicon nitride (SiN) photonics platforms. Due to some similarities between LNOI and SiN, established techniques and standards can readily be adapted to the LNOI platform including a significant array of interface approaches, device designs and also heterogeneous integration techniques for laser sources and photodetectors. In this contribution, we review the latest developments in this platform, examine where further development is necessary to achieve more functionalities in LNOI integrated optical circuits and make a few suggestions of interesting applications that could be realized in this platform.

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“…Recently the crystal-ion-sliced (CIS) thin-film LiNbO 3 on insulator (LNOI) platform has excited a lot of attention due to its superior advantages, such as tight optical mode confinement, high EO modulation efficiency, linear voltage-index relationship, ultrawide operational bandwidth, low drive power, high extinction ratio, and small bending radii [16][17][18][19][28][29][30]. Both standalone and hybrid LiNbO 3 platforms (e.g., Si-LiNbO 3 , Si 3 N 4 -LiNbO 3 ) [28][29][30][31][32][33] are very active in the related research fields. While most recent work has successfully demonstrated a low optical loss in standalone LiNbO 3 by the plasma-etching method [13,14] to form waveguide guiding, the hybrid platform still remains as an open research field owning its potential hybrid integration with the CMOScompatible manufacturing process and driving circuitry.…”

mentioning

confidence: 99%

“…Microring devices based on the Si 3 N 4 -LiNbO 3 material have yet to be studied. Si 3 N 4 -LiNbO 3 comes forward as a promising material system due to better index matching, high mode confinement inside LiNbO 3 [32][33][34], the ultralow propagation loss of Si 3 N 4 , high power handling capabilities, Si 3 N 4 insulating properties, and a wide optical transparency window [35]. Previous Si 3 N 4 -LiNbO 3 -based work focuses primarily on passive devices with vertical mode transition structures from Si 3 N 4 to LiNbO 3 material [32,33] and push-pull Mach-Zehnder interferometer (MZI) modulation [34].…”

mentioning

confidence: 99%

Tunable hybrid silicon nitride and thin-film lithium niobate electro-optic microresonator

et al. 2019

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This Letter presents, to the best of our knowledge, the first hybrid Si 3 N 4 -LiNbO 3 -based tunable microring resonator where the waveguide is formed by loading a Si 3 N 4 strip on an electro-optic (EO) material of X -cut thin-film LiNbO 3 . The developed hybrid Si 3 N 4 -LiNbO 3 microring exhibits a high intrinsic quality factor of 1.85 × 10 5 , with a ring propagation loss of 0.32 dB/cm, resulting in a spectral linewidth of 13 pm, and a resonance extinction ratio of ∼27 dB within the optical C-band for the transverse electric mode. Using the EO effect of LiNbO 3 , a 1.78 pm/V resonance tunability near 1550 nm wavelength is demonstrated.

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LiNbO₃Thin-Film Modulators Using Silicon Nitride Surface Ridge Waveguides

Cited by 110 publications

References 9 publications

Nanophotonic lithium niobate electro-optic modulators

Nanophotonic lithium niobate electro-optic modulators

Status and Potential of Lithium Niobate on Insulator (LNOI) for Photonic Integrated Circuits

Tunable hybrid silicon nitride and thin-film lithium niobate electro-optic microresonator

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LiNbO3Thin-Film Modulators Using Silicon Nitride Surface Ridge Waveguides

Cited by 110 publications

References 9 publications

Nanophotonic lithium niobate electro-optic modulators

Nanophotonic lithium niobate electro-optic modulators

Status and Potential of Lithium Niobate on Insulator (LNOI) for Photonic Integrated Circuits

Tunable hybrid silicon nitride and thin-film lithium niobate electro-optic microresonator

Contact Info

Product

Resources

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LiNbO₃Thin-Film Modulators Using Silicon Nitride Surface Ridge Waveguides