This Letter presents, to the best of our knowledge, the first hybrid Si 3 N 4 -LiNbO 3 -based tunable microring resonator where the waveguide is formed by loading a Si 3 N 4 strip on an electro-optic (EO) material of X -cut thin-film LiNbO 3 . The developed hybrid Si 3 N 4 -LiNbO 3 microring exhibits a high intrinsic quality factor of 1.85 × 10 5 , with a ring propagation loss of 0.32 dB/cm, resulting in a spectral linewidth of 13 pm, and a resonance extinction ratio of ∼27 dB within the optical C-band for the transverse electric mode. Using the EO effect of LiNbO 3 , a 1.78 pm/V resonance tunability near 1550 nm wavelength is demonstrated.
We demonstrate a process for the fabrication and transfer of silicon nanomembranes (Si-NMs) that have been released from their host substrates and redeposited on foreign flexible or flat substrates. The transfer process developed allows intricate photonic devices to be transferred via NMs to a variety of new substrate materials. This allows the transferred devices to benefit from the material properties of both substrate and NM. Our process is designed to transfer and stack large-area photonic devices without compromising their optical performance. The process has been used to transfer large-area unpatterned silicon NMs, in excess of 2.5 cm(2), and photonic devices with intricate device designs containing various fill factors. We have also demonstrated transferred photonic crystal devices that have maintained structural integrity and functionality.
In this paper, we present a compact photonic crystal directional coupler in a silicon on insulator platform electro-optically switched at 150 kHz with a switching time of 620 ns under a low voltage operation of 2.9 V. The switch design utilizes a coupled photonic crystal structure designed to operate in the slow light regime. Switching is attained by modulating the coupling coefficient of the coupled photonic crystal waveguide system by using a p-i-n diode to modulate the carrier concentration with a density of ∼104 A/cm2 across the plane of the photonic crystal.
A low voltage, wide bandwidth compact electro-optic modulator is a key building block in the realization of tomorrow's communication and networking needs. Recent advances in the fabrication and application of thin-film lithium niobate, and its integration with photonic integrated circuits based in silicon make it an ideal platform for such a device. In this work, a high-extinction dual-output folded electro-optic Mach Zehnder modulator in the silicon nitride and thin-film lithium niobate material system is presented. This modulator has an interaction region length of 11 mm and a physical length of 7.8 mm. The device demonstrates a fiber-to-fiber loss of roughly 12 dB using on-chip fiber couplers and DC half wave voltage (Vπ) of less than 3.0 V, or a modulation efficiency (Vπ•L) of 3.3 V•cm. The device shows a 3 dB bandwidth of roughly 30 GHz. Notably, the device demonstrates a power extinction ratio over 45 dB at each output port without the use of cascaded directional couplers or additional control circuitry; roughly 31 times better than previously reported devices. Paired with a balanced photo-diode receiver, this modulator can be used in various photonic communication systems. Such a detecting scheme is compatible with complex modulation formats such as differential phase shift keying and differential quadrature phase shift keying, where a dualoutput, ultra-high extinction device is fundamentally paramount to low-noise operation of the system.
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