Limiting Noise in Solid State Devices

Ziel, A. van der

doi:10.1007/978-3-642-87640-0_1

Cited by 17 publications

(26 citation statements)

References 20 publications

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“…Figure shows the normalized power spectral densities of the gate and drain current fluctuation ( S ig and S id ), and their cross‐correlation ( S igid ) of the SG and DG structures for V ds = 1 V and V gs − V t = 0.6 V. They show the common frequency dependence as in FET devices : S id follows a white noise behavior, corresponding to a thermal noise source in the channel; S ig has an f 2 dependence, and it can be associated with the capacitive coupling of charge fluctuations in the channel; the imaginary part of S igid increases proportionally with f , whereas its real part is negligible in the frequency range of interest. Meanwhile, the DG structure presents larger power spectral densities because of its larger drain current at the same bias.…”

Section: Resultsmentioning

confidence: 99%

Monte Carlo analysis of dynamic characteristics and high‐frequency noise performances of nanoscale double‐gate MOSFETs

Mohamed

2013

Int J Numerical Modelling

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In this paper, a full-band Monte Carlo simulator is employed to study the dynamic characteristics and highfrequency noise performances of a double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) with 30 nm gate length. Admittance parameters (Y parameters) are calculated to characterize the dynamic response of the device. The noise behaviors of the simulated structure are studied on the basis of the spectral densities of the instantaneous current fluctuations at the drain and gate terminals, together with their cross-correlation. Then the normalized noise parameters (P, R, and C), minimum noise figure (NF min ), and so on are employed to evaluate the noise performances. To show the outstanding radio-frequency performances of the DG MOSFET, a single-gate silicon-on-insulator MOSFET with the same gate length is also studied for comparison. The results show that the DG structure provides better dynamic characteristics and superior highfrequency noise performances, owing to its inherent short-channel effect immunity, better gate control ability, and lower channel noise.

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Section: Resultsmentioning

confidence: 99%

Monte Carlo analysis of dynamic characteristics and high‐frequency noise performances of nanoscale double‐gate MOSFETs

Mohamed

2013

Int J Numerical Modelling

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“…It is well known that the two shot noise sources of the HBT are correlated, and that this correlation can be approximated by the intrinsic transit-time [10]- [12]. The drawback so far was that this intrinsic time constant is not easily predicted.…”

Section: B Shot Noisementioning

confidence: 97%

Current Trends and Challenges in III-V HBT Compact Modeling

Rudolph

2008

2008 European Microwave Integrated Circuit Conference

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This paper gives an overview on recent achievements in the modeling of GaAs or InP based HBTs. The emphasis lies on the description of weakly nonlinear behavior, and on advanced descriptions for 1/ f and shot noise for nonlinear simulation. Although compact HBT modeling already reached a high level of accuracy, certain limitations remain that will also be addressed. I. IGaAs-based HBTs have been for quite a while the devices of choice for power amplification in the lower GHz range, especially for use in mobile devices. The vast majority of GaAs-HBT MMICs fabricated today therefore are power amplifiers (PAs) designed to deliver around 1 W in the range 1 -2 GHz, powered from a battery. InP based HBTs are capable to achieve highest cutoff frequencies while maintaining reasonably high breakdown voltages. E.g., this technology is well suited to design modulator drivers for multi-Gbps optical links that require high voltage swings and highest switching speeds. Recently developed GaAs HBT technologies target base station amplifiers rather than mobile PAs, with tenfold bias supply voltage and output power: beyond 10 W at 2 GHz from a 28 V supply. This results in much higher output impedances, that allow for easier and, especially, broadband output matching.Since III-V HBTs have come to market more than two decades after their unipolar counterparts, compact models are not yet as well established. This can be seen from the fact that simply the number of models that are available in circuit simulators is much lower than the number of MESFET or HEMT models. There are mainly two modern HBT models commonly available. One is the FBH model that will be used as the reference model in this paper. The other one that follows the same philosophy although with different formulas, is the AgilentHBT model [1]. On the other hand, designers are often not sure if they can trust the model they get, if it is not well understood what effects are to be accounted for.It is the aim of this paper to review the state-of-the-art in III-V HBT modeling. The status of the models will be discussed, as well as some recent advancements, and finally some unsolved issues will be addressed. In order to keep this article readable while addressing all relevant issues, the different issues will be touched rather than providing an indepth discussion. For details please refer to the literature cited in each section. Collector Contact Base ContactEmitter Air Bridge Fig. 1. Micro-photograph of single-finger HBT from FBH Foundry. The 20 µm thick emitter airbridge serves as a heat spreader, that is capable of equalizing the temperature distribution in multi-finger devices at 28 V operation. The airbridge has been removed in the foreground in order to show the inner device. A. HBT Model RequirementsTo begin with, three of the expectations shall be recalled that led to the development of HBTs. These are • the capability to be operated at high power densities, • high linearity, and • low 1/ f noise. HBTs are vertical devices, see Fig. 1. The collector curren...

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“…Recent developments in both bipolar and MOS technologies, such as lateral downscaling, shallow-junction formation, and the use of self-alignment techniques, have led to an increase in electric field strength around the drain and pn/npn junctions in these devices. Hence, the concept of the spread factor becomes not just a numerical offset, but also includes the high-field-dependent biasing phenomenon under the basis of the PF effect [33] whereby the DNW becomes the donor, and in the presence of a high electric field, the electron emission coefficient e n is enhanced in the expression [34,35] …”

Section: Spread Factor Jmentioning

confidence: 99%