Abstract:This paper gives an overview on recent achievements in the modeling of GaAs or InP based HBTs. The emphasis lies on the description of weakly nonlinear behavior, and on advanced descriptions for 1/ f and shot noise for nonlinear simulation. Although compact HBT modeling already reached a high level of accuracy, certain limitations remain that will also be addressed.
I. IGaAs-based HBTs have been for quite a while the devices of choice for power amplification in the lower GHz range, especially for us… Show more
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