Limiting Factors of the Safe Operating Area for Power Devices

Schulze, H.‐J.; Niedernostheide, F.‐J.; Pfirsch, F.; Baburske, Roman

doi:10.1109/ted.2012.2225148

Cited by 67 publications

(23 citation statements)

References 41 publications

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“…Thermal effects cause many challenges in a broad variety of semiconductor devices. Thermal instabilities limit the safe-operating area of high power devices and modules in electrical energy technology [1,2], electro-thermal feedback loops lead to catastrophic snapback phenomena in organic light-emitting diodes [3,4] and self-heating effects decisively limit the achievable output power of semiconductor lasers [5][6][7][8]. The numerical simulation of semiconductor devices showing strong self-heating and thermoelectric effects requires a thermodynamically consistent modeling approach, that describes the coupled charge carrier and heat transport processes.…”

Section: Introductionmentioning

confidence: 99%

Generalized Scharfetter–Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient

Kantner

2020

Journal of Computational Physics

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Many challenges faced in today's semiconductor devices are related to self-heating phenomena. The optimization of device designs can be assisted by numerical simulations using the non-isothermal drift-diffusion system, where the magnitude of the thermoelectric cross effects is controlled by the Seebeck coefficient. We show that the model equations take a remarkably simple form when assuming the so-called Kelvin formula for the Seebeck coefficient. The corresponding heat generation rate involves exactly the three classically known self-heating effects, namely Joule, recombination and Thomson-Peltier heating, without any further (transient) contributions. Moreover, the thermal driving force in the electrical current density expressions can be entirely absorbed in the diffusion coefficient via a generalized Einstein relation. The efficient numerical simulation relies on an accurate and robust discretization technique for the fluxes (finite volume Scharfetter-Gummel method), which allows to cope with the typically stiff solutions of the semiconductor device equations. We derive two non-isothermal generalizations of the Scharfetter-Gummel scheme for degenerate semiconductors (Fermi-Dirac statistics) obeying the Kelvin formula. The approaches differ in the treatment of degeneration effects: The first is based on an approximation of the discrete generalized Einstein relation implying a specifically modified thermal voltage, whereas the second scheme follows the conventionally used approach employing a modified electric field. We present a detailed analysis and comparison of both schemes, indicating a superior performance of the modified thermal voltage scheme.

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Section: Introductionmentioning

confidence: 99%

Generalized Scharfetter–Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient

Kantner

2020

Journal of Computational Physics

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“…has been concluded that power device failures are mostly triggered by the thermo-electrical breakdown, local thermal runaway and thermo-mechanical failure [7][8]. In practical applications, junction and case temperature fluctuations may deteriorate the electrical specifications, such as resulting in higher leakage currents and smaller safe operation areas, etc.…”

Section: Introductionmentioning

confidence: 99%

Junction Temperature Extraction Approach with Turn-off Delay Time for High-voltage High-Power IGBT Modules

Luo

Chen

Sun

et al. 2015

IEEE Trans. Power Electron.

161

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Abstract -Thermo-sensitive electrical parameter (TSEP) approaches are widely employed in the junction temperature extraction and prediction of power semiconductor devices. In this paper, the turn-off delay time is explored as an indicator of a TSEP to extract the junction temperature from high power insulated gate bipolar transistor (IGBT) modules. The parasitic inductor L eE between the Kelvin and power emitter terminals of an IGBT module is utilized to extract the turn-off delay time. Furthermore, the monotonic dependence between the junction temperature and turn-off delay time is investigated. The beginning and end point of the turn-off delay time can be determined by monitoring the induced voltage v eE across the inductor L eE . A dynamic switching characteristic test platform for high power IGBT modules is used to experimentally verify the theoretical analysis. The experimental results show that the dependency between IGBT junction temperature and turn-off delay time is near linear. It is established that the turn-off delay time is a viable TSEP with good linearity, fixed sensitivity and offers non-destruction on-line IGBT junction temperature extraction.Index Terms -Thermo-sensitive electrical parameter, high power IGBTs, on-line junction temperature extraction, turn-off delay time. I.0885-8993 (c) . His research interests include high power devices, advanced power converters and operation optimization for renewable energy based power systems. Dr. Li has published more than 100 peer-reviewed technical papers and holds over 30 issued/pending patents.Due to his excellent teaching and research contributions, Dr.

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“…Recent studies have shown that the appearances of the filaments at the anode and cathode sides do not necessarily lead to the diode destruction, however, the eventual filament by a transition from avalanche-induced into thermally driven filament could cause the local temperature rise inside the device, this is an important factor of the device failure [3][4][5]. In order to improve the fast and soft recovery characteristic of high voltage diode, some technologies by improved structures and carrier lifetime controls were implemented.…”

Section: Introductionmentioning

confidence: 99%

Influence of carrier lifetime distribution on the current filament in high voltage diode

Zhang

Wang

2017

Microelectronics Reliability

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Limiting Factors of the Safe Operating Area for Power Devices

Cited by 67 publications

References 41 publications

Generalized Scharfetter–Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient

Generalized Scharfetter–Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient

Junction Temperature Extraction Approach with Turn-off Delay Time for High-voltage High-Power IGBT Modules

Influence of carrier lifetime distribution on the current filament in high voltage diode

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