Limitation of the short-circuit ruggedness of high-voltage IGBTs

Kopta, A.; Rahimo, Munaf; Schlapbach, U.; Kaminski, Nando; Silber, D.

doi:10.1109/ispsd.2009.5157994

Cited by 42 publications

(48 citation statements)

References 2 publications

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“…: Several IGBT basic cells together with the entire device edge termination have been considered (see Fig. 4), which contrasts to those approaches followed up to now [12,13,14]. The physical input parameters for the simulations have been adjusted in order for their results to match the IGBT experimental static and dynamic characteristics.…”

Section: A Simultated Structure Descriptionmentioning

confidence: 99%

Edge termination impact on clamped inductive turn-off failure in high-voltage IGBTs under overcurrent conditions

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Cortés

Urresti

et al. 2011

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs

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This work provides a physical insight into the failure of high-voltage IGBT modules for railway traction when an overload current event occurs during a clamped inductive turnoff. The inspection of failed IGBTs in power modules coming from the field reveals burnt-out points in the vicinity of the device edge termination. This physical signature has been also verified by experimental tests. To explore this result, physical TCAD simulations have been carried out considering, for the first time, the electro-thermal mismatch introduced by the edge termination. From simulation and experimental results, a destructive dynamic avalanche phenomenon at the last IGBT cell is identified as responsible for the observed failure.

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Section: A Simultated Structure Descriptionmentioning

confidence: 99%

Edge termination impact on clamped inductive turn-off failure in high-voltage IGBTs under overcurrent conditions

Perpiñà

Cortés

Urresti

et al. 2011

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs

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“…This instability may cause the destruction of the gate-oxide, in case that the oscillation amplitude diverges out of control, as reported in [11]. Previous studies have pointed out that during short circuit, the IGBT presents a rotated electric field shape (Kirk Effect), which is a very unstable condition [12], [13]. The electric field gradient can be calculated with the Poisson equation, given as: where s is the dielectric permittivity of the semiconductor, q is the electron charge, N D is the drift doping concentration, h is the hole density and e is the electron density.…”

Section: Introductionmentioning

confidence: 86%

Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability

Reigosa

Iannuzzo

Rahimo

et al. 2018

2018 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Abstract-In this paper, a 3.3-kV Enhanced Trench IGBT has been designed with a high emitter efficiency, for improving its short-circuit robustness. The carrier distribution profile has been shaped in a way that it is possible to increase the electric field at the surface of the IGBT, and thereby, counteract the Kirk Effect onset. This design approach is beneficial for mitigating high-frequency oscillations, typically observed in IGBTs under short-circuit conditions. The effectiveness of the proposed design rule is validated by means of mixed-mode device simulations. Then, two IGBTs have been fabricated with different emitter efficiencies and tested under short circuit, validating that the high-frequency oscillations can be mitigated, with higher emitter efficiency IGBT designs.

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“…To account for the electrothermal mismatch in the die, they have been connected in a mixed mode approach by means of sharing resistors, as detailed further on. This approach contrasts to those followed up to now [6,[8][9][10].…”

Section: Die Level Approach: Igbt Die Physical Modellingmentioning

confidence: 95%

Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling

Cortés

Perpiñà

Urresti

et al. 2012

Microelectronics Reliability

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Limitation of the short-circuit ruggedness of high-voltage IGBTs

Cited by 42 publications

References 2 publications

Edge termination impact on clamped inductive turn-off failure in high-voltage IGBTs under overcurrent conditions

Edge termination impact on clamped inductive turn-off failure in high-voltage IGBTs under overcurrent conditions

Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability

Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling

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