Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling

Cortés, I.; Perpiñà, X.; Urresti, J.; Jordà, X.; Rebollo, J.

doi:10.1016/j.microrel.2012.06.074

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Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling

Cited by 4 publications

References 15 publications

Feature extraction based on EMD for Insulated Gate Bipolar Transistor

Feature extraction based on EMD for Insulated Gate Bipolar Transistor

Non-Simultaneous Triggering Induced Failure of CS-MCT Under Repetitive High-Current Pulse Condition

Layout Role in Failure Physics of IGBTs Under Overloading Clamped Inductive Turnoff

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