LightMOS a new power semiconductor concept dedicated for lamp ballast application

Griebl, E.; Lorenz, L.; Purschel, M.

doi:10.1109/ias.2003.1257610

Cited by 7 publications

(5 citation statements)

References 2 publications

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“…dr (16) solve (16) to obtain the analytical model to describe the onset current density for the initial snapback in n-island design of the cylindrical anode shorted IGBT…”

Section: Cylindrical Design Of the Anode Shortsmentioning

confidence: 99%

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Reverse conducting–IGBTs initial snapback phenomenon and its analytical modelling

Vemulapati

Kaminski

Silber

et al. 2014

IET Circuits, Devices & Systems

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Analytical models have been proposed to describe the onset current density for the initial snapback in the transistor onstate mode and in the blocking state of reverse conducting-insulated gate bipolar transistors (RC-IGBT) for the stripe and cylindrical designs of the anode shorts. In cylindrical case, there are two possible ways in designing the anode shorts and the authors have proposed an analytical model for each of them. The considered RC-IGBTs are vertical with soft punch-through type buffer designs. The analytical model has been evaluated with the aid of 2-D device simulations and measurements. The authors have investigated the initial snapback phenomenon for different voltage class devices at a given technology (anode and buffer profiles) and found out that the snapback voltage increases with the blocking capability but not the snapback current density. The authors have also observed that the initial snapback phenomenon is more pronounced at lower temperatures. From the analytical model as well as simulation and measurement results, the authors have found that for a given voltage class and technology, the p +-anode width is the only remaining design degree of freedom which determines the initial snapback. The adjustment of the on-state losses can then be done with the proportion of the n +-short region.

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“…dr (16) solve (16) to obtain the analytical model to describe the onset current density for the initial snapback in n-island design of the cylindrical anode shorted IGBT…”

Section: Cylindrical Design Of the Anode Shortsmentioning

confidence: 99%

“…However, until today no detailed analytical model has been reported for the initial snapback phenomenon in vertical RC-IGBTs for the strip and cylindrical designs of the anode shorts [15] but many authors have published simulation and experimental results [1,[16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Reverse conducting–IGBTs initial snapback phenomenon and its analytical modelling

Vemulapati

Kaminski

Silber

et al. 2014

IET Circuits, Devices & Systems

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“…FORWARD CONDUCTION CHARACTERISTICS Fig. 2 illustrates the forward conduction characteristics for the conventional RC-IGBT (in [17]), TPRC-IGBT (in [13]), DARC-IGBT (in [14]) and the proposed LDT-RC-IGBT. For the conventional RC-IGBT, the FWD is integrated by replacing partial P-Collector with N-Collector in the bottom of the chip, as a result, an obvious snapback is observed due to the short effect of the N-Collector, and the device will change from unipolar to bipolar mode with abrupt current.…”

Section: Resultsmentioning

confidence: 99%

A Snapback-Free and Low-Loss RC-IGBT With Lateral FWD Integrated in the Terminal Region

Chen

Huang

et al. 2019

IEEE Access

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A novel Reverse Conduction Insulated Gate Bipolar Transistor (RC-IGBT) with Lateral Free-Wheeling Diode (FWD) integrated in the Termination is proposed and investigated by simulation, named LDT-RC-IGBT. Firstly, the Equi-Potential Ring (EPR) of the termination acts as an anode and the N-Stopper/N-Collector of the termination acts as the cathode of the anti-parallel built-in diode. The N-Stopper/N-Collector is shorted to the P-Collector, and it also acts as the electric filed stopper in the breakdown state. Secondly, the N-Collector and the P-Collector are designed apart at the surface and bottom, respectively. Thus the short effect of the N-Collector of the conventional RC-IGBT is avoided, and the snapback is completely eliminated. Thirdly, the P-Collector is not replaced by the N-Collector so that the hole injection is much higher than the conventional RC-IGBT, thus the forward voltage drop (V on ) can be reduced remarkably, which is favorable to the decrease of conducting energy loss. The results show that, the LDT-RC-IGBT not only eliminates the snapback but also reduces V on , it achieves a better tradeoff between V on and turn-off loss E off . At the same V on of 1.27 V, the E off of LDT-RC-IGBT is 2.06 mJ/cm 2 , which is 35.2%, 45.2% and 46.3% lower than that of the conventional RC-IGBT(3.19 mJ/cm 2 ), TPRC-IGBT(3.78 mJ/cm 2 ) and DARC-IGBT(3.85 mJ/cm 2 ), respectively. At the same E off of 3.10 mJ/cm 2 , the V on of LDT-RC-IGBT is 1.17 V, which is 10% and 15.8% lower than that of the conventional RC-IGBT(1.30 V) and the DARC-IGBT(1.39 V), respectively. RC-IGBT, breakdown voltage, turn-off, snapback. INDEX TERMS

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“…One example is the "LightMOS" IGBT product available from Infineon [23]. One example is the "LightMOS" IGBT product available from Infineon [23].…”

Section: Discrete Igbt Designs For Cflsmentioning

confidence: 99%

“…This occurs because the injecting P-N junction is shorted by the ohmic current path through the cathode region of the diode. The snapback can be reduced by proper scaling of the N þ region formed on the back of the IGBT chip [23]. 11.11.…”

Section: Discrete Igbt Designs For Cflsmentioning

confidence: 99%

IGBT Applications

Baliga

2015

The IGBT Device

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LightMOS a new power semiconductor concept dedicated for lamp ballast application

Cited by 7 publications

References 2 publications

Reverse conducting–IGBTs initial snapback phenomenon and its analytical modelling

Reverse conducting–IGBTs initial snapback phenomenon and its analytical modelling

A Snapback-Free and Low-Loss RC-IGBT With Lateral FWD Integrated in the Terminal Region

IGBT Applications

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