Reverse conducting–IGBTs initial snapback phenomenon and its analytical modelling

Vemulapati, Umamaheswara; Kaminski, Nando; Silber, D.; Storasta, Liutauras; Rahimo, Munaf

doi:10.1049/iet-cds.2013.0222

Cited by 26 publications

(18 citation statements)

References 15 publications

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“…However, the snapback voltage ÁV SB of the proposed RC-IGBT has been always smaller than that of the conventional one. As expected, the snapback phenomenon is mainly determined by the width of the P + anode Lp and is not dependent on the width or the proportion of N + short Ln [15]. It means that when Ln/Lp tends to zero, RC-IGBT will become the traditional IGBT, which completely eliminates the snapback phenomenon.…”

Section: Ffs-rc-igbt Structuresupporting

confidence: 51%

A snapback-free reverse conducting IGBT with recess and floating buffer at the backside

Xie

Wei

et al. 2017

IEICE Electron. Express

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We propose two novel ways to alleviate the reverse conducting insulated gate bipolar transistor (RC-IGBT) snapback phenomenon by introducing the floating field stop layer with a lightly doped p-floating layer and recess structure at the backside. The floating field stop layer is submerged in the N-drift region and located several micrometers above the P + anode region, which would not degrade the blocking capability but can suppress the snapback phenomenon effectively. When the collector length exceeds 100 µm, the snapback voltage ΔV SB of the floating field stop RC-IGBT with the p-floating layer can be less than 0.5 V. Furthermore, the recess structure at the backside can separate the N + short and P + anode region, which will be beneficial to eliminate the snapback. Finally, an RC-IGBT with a floating buffer layer and recess at the backside is proposed. Compared to the RC-IGBT featuring an oxide trench between the N + short and P + anode, the proposed one has utilized the simple recess structure to replace the costly oxide trench and achieved the identical characteristics simultaneously.

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Section: Ffs-rc-igbt Structuresupporting

confidence: 51%

A snapback-free reverse conducting IGBT with recess and floating buffer at the backside

Xie

Wei

et al. 2017

IEICE Electron. Express

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“…Reduction in the density of n+ shorts within the device area can reduce the snapback voltage but at the expense of the anti-parallel diode performance. [4], [5], [10], [12], [14], [15].…”

Section: Traditional Rc-igbt Structurementioning

confidence: 99%

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Findlay

Udrea

2019

IEEE Trans. Electron Devices

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The Reverse Conducting IGBT has several benefits over a separate IGBT and diode solution and has the potential to become the dominant device within many power electronic applications; including, but not limited to, motor control, resonant converters, and switch mode power supplies. However, the device inherently suffers from many undesirable design trade-offs which have prevented its widespread use. One of the most critical issues is the snapback seen in the forward conduction characteristic which can prevent full turn-on of the device and result in the device becoming unsuitable for parallel operation (required in many high voltage modules). This phenomenon can be suppressed but at the expense of the reverse conduction performance. This paper provides an overview of the technical design challenges presented by the RC-IGBT structure and reviews alternative device concepts which have been proposed in literature. Analysis shows that these alternate concepts either present a trade-off in performance characteristics, an inability to be manufactured, or a requirement for a custom gate drive.

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“…The first one which demands prompt improvement is that the device is prone to undesirable snapback. When the devices are paralleled, this deleterious effect can prevent the full turn-on of them [6,7,8,9]. The second is that a high forward voltage drop which can increase the conducting energy loss and a non-uniform distributed current which can decrease the conducting capability and reliability are observed.…”

Section: Introductionmentioning

confidence: 99%

A RC-IGBT with built-in free wheeling diode controlled by MOSFET

Chen

Guo

et al. 2017

IEICE Electron. Express

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A reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with integrated Free-Wheeling Diode (FWD) in edge termination region controlled by metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed. The Field Limiting Ring (FLR) of the edge termination acts as the anode and the N-Collector acts as the cathode of the FWD. The MOSFET makes the FLR conduct reverse current at reverse conduction and float at reverse breakdown. Compared with the conventional RC-IGBT, which integrates the FWD in active cell region, the proposed device can eliminate the snapback easily at forward conduction. In addition, the forward voltage drop can be decreased largely.

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Reverse conducting–IGBTs initial snapback phenomenon and its analytical modelling

Cited by 26 publications

References 15 publications

A snapback-free reverse conducting IGBT with recess and floating buffer at the backside

A snapback-free reverse conducting IGBT with recess and floating buffer at the backside

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

A RC-IGBT with built-in free wheeling diode controlled by MOSFET

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