Light management of a-SiOx:H thin film solar cells with hydrogen-reduced p+ buffer at TiO2/p-layer interface

Kang, Dong‐Won; Chowdhury, Amartya; Sichanugrist, Porponth; Konagai, Makoto

doi:10.1016/j.solmat.2015.07.016

Cited by 5 publications

(3 citation statements)

References 37 publications

(48 reference statements)

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“…Also, in order to obtain high open‐circuit voltage, wide‐bandgap a‐SiO:H that we have developed so far is used for 1st, 2nd, 4th and 5th cells . Low temperature deposited a‐Si:H is used for the 3rd cell.…”

Section: Structure and Fabrication Methods Of Amorphous Si:h Based Quimentioning

confidence: 99%

Bifacial amorphous Si quintuple‐junction solar cells for IoT devices with high open‐circuit voltage of 3.5V under low illuminance

Konagai

Sasaki

2019

Progress in Photovoltaics

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Hydrogenated amorphous Si(a-Si:H) quintuple-junction solar cells, which consist of a-SiO x :H/a-SiO x :H/a-Si:H/a-SiO x :H/a-SiO x :H, were fabricated by plasma CVD method. The total thickness was 0.6-0.8 μm. Irradiation intensity (Pin) dependence of the open circuit voltage (V oc ) of quintuple-junction solar cells was measured. The decreasing amount ΔV oc (1/10) of the open-circuit voltage when the irradiation intensity became 1/10 was 62mV/cell. Voc drops rapidly from around the irradiation intensity of 1mW/cm 2 (approximately 1,000 lux). This large Voc reduction is due to leakage current. Then, we discussed the origin of the leakage current, and, finally, by improving the leakage current, a very high open-circuit voltage V oc of 3.5 V was demonstrated under LED light illumination. Furthermore, we theoretically analyzed Voc as a function of the irradiation intensity, including effects of the leakage current and the film quality of i-a-Si(O):H. It was found from the simulation results that it is necessary to increase the shunt resistance Rsh and to lower the defect density of i-a-Si(O):H in order to obtain a sufficient Voc-Pin characteristics for IoT devices application under low illuminance. KEYWORDS amorphous silicon, quintuple-junction, solar cell, low illuminance 1 | INTRODUCTION Over the past decades, solar cell development for power applications has been vigorously promoted all over the world. As a result, the production of solar cells in the world in 2017 has reached over 100 GW. 1 Also, the application fields of solar cells are widely spread from smallscale residential use for kW level to large-scale Mega-solar over 100 MW. Recently, in view of new application, developments of photovoltaic system on the ocean, on roads, in mobilities, and in flying vehicles are expected. On the other hand, the Internet of Things (IoT) has caused a new technological paradigm shift around the world, and attention has been focused on solar cell development as a self-sustaining power source for application to IoT devices. 2-8 The IoT promises a vast network of interconnected devices and sensors to monitor the world. As more objects are embedded with wireless sensors and communication systems the challenge of powering devices not connected to an electrical-network has emerged. Energy harvesting has become a key enabler of IoT. Self-powered sensor systems use a variety of energysavings, such as solar energy using solar cells, mechanical energy and so on. As provided in ref. 2, solar cells are the easiest-to-use energy sources. The achieved reduction of the electric power demand for small electronic devices to the range of microwatts has led to the concept of "micro-energy harvesting".Looking at solar cells that have been put into practical use as power sources for consumer equipment, most are crystalline Si solar

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Section: Structure and Fabrication Methods Of Amorphous Si:h Based Quimentioning

confidence: 99%

Bifacial amorphous Si quintuple‐junction solar cells for IoT devices with high open‐circuit voltage of 3.5V under low illuminance

Konagai

Sasaki

2019

Progress in Photovoltaics

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“…The a-Si:H=a-Si:H tandem has recently been compared with the a-SiO x :H=a-Si:H double junction by our group. 25) Our experimental results showed that the a-SiO x :H with a wider E opt can achieve a higher V oc than the a-Si:H in the device. Also, the temperature-gradient a-SiO x :H (100 °C)=a-Si:H (150 °C) tandem cell showed a markedly high V oc including better current matching, which resulted in a higher efficiency than the a-Si:H (100 °C)=a-Si:H (150 °C) tandem solar cells.…”

Section: Introductionmentioning

confidence: 63%

Low-temperature-processed a-SiO_x:H/a-Si:H tandem cells for full spectrum solar cells

Kang

Sichanugrist

Miyajima

et al. 2015

Jpn. J. Appl. Phys.

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We developed wide-bandgap amorphous silicon (a-Si:H) and amorphous silicon oxide (a-SiOx:H) absorbers by extremely decreasing deposition temperature to as low as 100 °C. By adjusting hydrogen and carbon dioxide gas flow rates, device-quality absorbers and thus suitable single junction cells were obtained. An a-SiOx:H single-junction cell (i = 100 nm) fabricated employing the absorber we developed showed an open circuit voltage (Voc) of 1.007 V and a fill factor of 0.741, which are better than those of a-Si:H cells. This a-SiOx:H cell was introduced in a-SiOx:H/a-Si:H tandem cells as the top cell, which contributed to the achievement of a markedly high Voc of 1.910 V. This tandem cell with an efficiency of 9.25% showed better Voc and current matching property than the a-Si:H/a-Si:H (8.74%) tandem structure. The low-temperature-gradient a-SiOx:H/a-Si:H tandem cells can be a promising configuration for spectrum splitting applications.

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“…Our experimental results showed that the a-SiO x :H with a wider E opt can achieve a higher V oc than the a-Si:H in the device. 28) An a-SiO x :H single-junction cell (i layer: 100 nm thick) showed an open circuit voltage (V oc ) of 1.007 V. 29) For the 3rd cell (middle cell), conventional a-Si:H (T sub = 180 °C, E opt = 1.75 eV) is used. The 4th cell and the 5th cell (bottom cell) are the same as the 2nd cell and the 1st cell, respectively.…”

Section: Structure and Preparation Of Solar Cellsmentioning

confidence: 99%

High voltage bifacial amorphous Si quintuple-junction solar cells for IoT devices

Konagai¹,

Sasaki²

2019

Jpn. J. Appl. Phys.

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Abstarct A bifacial amorphous Si quintuple-junction solar cell was proposed as a power source for IoT devices. Conventionally, interconnection using laser processing has been widely adopted in consumer devices using solar cells as a power source in order to increase the operating voltage, but in this paper, we propose a method to make the output voltage 3 V or more by quintuple-junction. First, after describing the necessity of using the bifacial structure, a simple theoretical discussion on the layer thickness of each cell was made. In addition, a-SiOx:H/a-SiOx:H/a-Si:H/a-SiOx:H/a-SiOx:H quintuple-junction solar cells were fabricated by plasma CVD method. As a result, a very high open circuit voltage of 3.4 V was demonstrated under LED light illumination.

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Light management of a-SiOx:H thin film solar cells with hydrogen-reduced p+ buffer at TiO2/p-layer interface

Cited by 5 publications

References 37 publications

Bifacial amorphous Si quintuple‐junction solar cells for IoT devices with high open‐circuit voltage of 3.5V under low illuminance

Bifacial amorphous Si quintuple‐junction solar cells for IoT devices with high open‐circuit voltage of 3.5V under low illuminance

Low-temperature-processed a-SiO_x:H/a-Si:H tandem cells for full spectrum solar cells

High voltage bifacial amorphous Si quintuple-junction solar cells for IoT devices

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Light management of a-SiOx:H thin film solar cells with hydrogen-reduced p+ buffer at TiO2/p-layer interface

Cited by 5 publications

References 37 publications

Bifacial amorphous Si quintuple‐junction solar cells for IoT devices with high open‐circuit voltage of 3.5V under low illuminance

Bifacial amorphous Si quintuple‐junction solar cells for IoT devices with high open‐circuit voltage of 3.5V under low illuminance

Low-temperature-processed a-SiOx:H/a-Si:H tandem cells for full spectrum solar cells

High voltage bifacial amorphous Si quintuple-junction solar cells for IoT devices

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Low-temperature-processed a-SiO_x:H/a-Si:H tandem cells for full spectrum solar cells