Low-temperature-processed a-SiO<i><sub>x</sub></i>:H/a-Si:H tandem cells for full spectrum solar cells

Kang, Dong‐Won; Sichanugrist, Porponth; Miyajima, Shinsuke; Konagai, Makoto

doi:10.7567/jjap.54.08kb02

Cited by 6 publications

(5 citation statements)

References 30 publications

(30 reference statements)

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“…Also, in order to obtain high open‐circuit voltage, wide‐bandgap a‐SiO:H that we have developed so far is used for 1st, 2nd, 4th and 5th cells . Low temperature deposited a‐Si:H is used for the 3rd cell.…”

Section: Structure and Fabrication Methods Of Amorphous Si:h Based Quimentioning

confidence: 99%

Bifacial amorphous Si quintuple‐junction solar cells for IoT devices with high open‐circuit voltage of 3.5V under low illuminance

Konagai

Sasaki

2019

Progress in Photovoltaics

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Hydrogenated amorphous Si(a-Si:H) quintuple-junction solar cells, which consist of a-SiO x :H/a-SiO x :H/a-Si:H/a-SiO x :H/a-SiO x :H, were fabricated by plasma CVD method. The total thickness was 0.6-0.8 μm. Irradiation intensity (Pin) dependence of the open circuit voltage (V oc ) of quintuple-junction solar cells was measured. The decreasing amount ΔV oc (1/10) of the open-circuit voltage when the irradiation intensity became 1/10 was 62mV/cell. Voc drops rapidly from around the irradiation intensity of 1mW/cm 2 (approximately 1,000 lux). This large Voc reduction is due to leakage current. Then, we discussed the origin of the leakage current, and, finally, by improving the leakage current, a very high open-circuit voltage V oc of 3.5 V was demonstrated under LED light illumination. Furthermore, we theoretically analyzed Voc as a function of the irradiation intensity, including effects of the leakage current and the film quality of i-a-Si(O):H. It was found from the simulation results that it is necessary to increase the shunt resistance Rsh and to lower the defect density of i-a-Si(O):H in order to obtain a sufficient Voc-Pin characteristics for IoT devices application under low illuminance. KEYWORDS amorphous silicon, quintuple-junction, solar cell, low illuminance 1 | INTRODUCTION Over the past decades, solar cell development for power applications has been vigorously promoted all over the world. As a result, the production of solar cells in the world in 2017 has reached over 100 GW. 1 Also, the application fields of solar cells are widely spread from smallscale residential use for kW level to large-scale Mega-solar over 100 MW. Recently, in view of new application, developments of photovoltaic system on the ocean, on roads, in mobilities, and in flying vehicles are expected. On the other hand, the Internet of Things (IoT) has caused a new technological paradigm shift around the world, and attention has been focused on solar cell development as a self-sustaining power source for application to IoT devices. 2-8 The IoT promises a vast network of interconnected devices and sensors to monitor the world. As more objects are embedded with wireless sensors and communication systems the challenge of powering devices not connected to an electrical-network has emerged. Energy harvesting has become a key enabler of IoT. Self-powered sensor systems use a variety of energysavings, such as solar energy using solar cells, mechanical energy and so on. As provided in ref. 2, solar cells are the easiest-to-use energy sources. The achieved reduction of the electric power demand for small electronic devices to the range of microwatts has led to the concept of "micro-energy harvesting".Looking at solar cells that have been put into practical use as power sources for consumer equipment, most are crystalline Si solar

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Section: Structure and Fabrication Methods Of Amorphous Si:h Based Quimentioning

confidence: 99%

Bifacial amorphous Si quintuple‐junction solar cells for IoT devices with high open‐circuit voltage of 3.5V under low illuminance

Konagai

Sasaki

2019

Progress in Photovoltaics

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“…In this study, we focus on the device simulations of perovskite/HJ c‐Si monolithic tandem solar cells using silicon‐based tunnel recombination junction (TRJ) which consists of doped hydrogenated amorphous silicon (a‐Si:H) and doped hydrogenated microcrystalline silicon oxide (µc‐Si 1− x O x :H). This TRJ layer is free from free carrier absorption and is used in silicon thin‐film tandem solar cells . The simulations were carried out by using AFORS‐HET simulation tool (ver.…”

Section: Introductionmentioning

confidence: 99%

Device simulation of CH₃NH₃PbI₃ perovskite/heterojunction crystalline silicon monolithic tandem solar cells using an n‐type a‐Si:H/p‐type µc‐Si_1–xO_x:H tunnel junction

Nakanishi

Takiguchi

Miyajima

2016

Physica Status Solidi (a)

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We investigate perovskite/heterojunction crystalline silicon monolithic tandem solar cells by using device simulation. A hydrogenated amorphous and microcrystalline silicon‐based tunnel recombination junction is applied to the tandem solar cells. The influence of the conduction and valence band offset between the n‐type layer of the perovskite top cell and the tunnel recombination junction was investigated. To obtain excellent solar cell performance, the conduction band offset should be 0–0.6 eV, although the valence band offset does not affect the solar cell performance. We also found that higher fill factor is expected when the n‐type layer of the perovskite top cell is located on the tunnel recombination junction compared with the structure in which the hole conductor is located on the tunnel recombination junction.

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“…12 In an amorphous Si-based multi-junction solar cell, it is possible to continuously deposit all layers on a substrate. Needless to say, a low temperature deposition is essential for preparing a-Si:H based films on polyimide, but our group has already established the deposition technique in the low temperature range of 100-120 C. 13,14 In this paper, a-Si multi-junction solar cells are deposited by using these low-temperature PE-CVD techniques. Although the research and development of CIGS-based solar cell deposition on flexible polyimide substrates is underway, the film substrate temperature is as high as 400 C to 450 C. 15,16 Amorphous Si solar cells can be formed at a lower temperature of 120 C.…”

Section: Introductionmentioning

confidence: 99%

Flexible bifacial amorphous Si quintuple‐ and sextuple‐junction solar cells for Internet of Things devices

Konagai

Noge

Ishikawa

2020

Progress in Photovoltaics

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Low-temperature-processed a-SiO_x:H/a-Si:H tandem cells for full spectrum solar cells

Cited by 6 publications

References 30 publications

Bifacial amorphous Si quintuple‐junction solar cells for IoT devices with high open‐circuit voltage of 3.5V under low illuminance

Bifacial amorphous Si quintuple‐junction solar cells for IoT devices with high open‐circuit voltage of 3.5V under low illuminance

Device simulation of CH₃NH₃PbI₃ perovskite/heterojunction crystalline silicon monolithic tandem solar cells using an n‐type a‐Si:H/p‐type µc‐Si_1–xO_x:H tunnel junction

Flexible bifacial amorphous Si quintuple‐ and sextuple‐junction solar cells for Internet of Things devices

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Low-temperature-processed a-SiOx:H/a-Si:H tandem cells for full spectrum solar cells

Cited by 6 publications

References 30 publications

Bifacial amorphous Si quintuple‐junction solar cells for IoT devices with high open‐circuit voltage of 3.5V under low illuminance

Bifacial amorphous Si quintuple‐junction solar cells for IoT devices with high open‐circuit voltage of 3.5V under low illuminance

Device simulation of CH3NH3PbI3 perovskite/heterojunction crystalline silicon monolithic tandem solar cells using an n‐type a‐Si:H/p‐type µc‐Si1–xOx:H tunnel junction

Flexible bifacial amorphous Si quintuple‐ and sextuple‐junction solar cells for Internet of Things devices

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Low-temperature-processed a-SiO_x:H/a-Si:H tandem cells for full spectrum solar cells

Device simulation of CH₃NH₃PbI₃ perovskite/heterojunction crystalline silicon monolithic tandem solar cells using an n‐type a‐Si:H/p‐type µc‐Si_1–xO_x:H tunnel junction