Light induced phenomena in microcrystalline silicon

Kondo, Michio; Nishimiya, T.; Saito, Kimihiko; Matsuda, Akihisa

doi:10.1016/s0022-3093(98)00276-2

Cited by 26 publications

(7 citation statements)

References 10 publications

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“…In addition, we can interpret electrons in conduction band tail (CE) states as the negative charge state of extended defects as sketched in the schematic energy structure. This is consistent with the common picture of CE states being localized states in the c-Si band gap in energetic proximity to the conduction band [86], which are observed in EPR and EDMR spectra of microcrystalline silicon under illumination or negative doping [50,86]. On the other hand, holes trapped in states close to the valence band (referred to as CH states [49]) correspond to the positive charge state of extended defects.…”

Section: B Energetic Structure Of Ce and Te States And Spin-dependensupporting

confidence: 88%

Triplet excitons as sensitive spin probes for structure analysis of extended defects in microcrystalline silicon

et al. 2016

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Electrically detected magnetic resonance (EDMR) spectroscopy is employed to study the influence of triplet excitons on the photocurrent in state-of-the-art microcrystalline silicon thin-film solar cells. These triplet excitons are used as sensitive spin probes for the investigation of their electronic and nuclear environment in this mixedphase material. According to low-temperature EDMR results obtained from solar cells with different 29 Si isotope concentrations between 0.01% and 50%, the triplet excitons reside at extended defects in the crystallites of microcrystalline silicon that give rise to shallow states in the silicon band gap. The excitons possess a rather delocalized wave function, couple to electron spins in conduction band tail states nearby, and take part in a spin-dependent recombination process. Our study shows that extended defects such as grain boundaries or stacking faults in the crystalline part of the material act as charge carrier traps that can influence the material conductivity.

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Section: B Energetic Structure Of Ce and Te States And Spin-dependensupporting

confidence: 88%

Triplet excitons as sensitive spin probes for structure analysis of extended defects in microcrystalline silicon

et al. 2016

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“…In intrinsic and n-doped µc-Si:H an ESR resonance at g = 1.997 − 1.998 is reported in various studies which is associated with shallow localised states in energetic proximity to the conduction band, typically referred to as CE states [2,[19][20][21][22][23]. It was demonstrated by cw-and pEDMR measurements on µc-Si:H films that these states are involved in hopping transport at low temperatures as well as in tunnelling recombination between CE and dangling bond states [3,22].…”

Section: Intrinsic µC-si:hmentioning

confidence: 99%

Electrical detection of electron spin resonance in microcrystalline silicon pin solar cells

Behrends

Schnegg

Fehr

et al. 2009

Philosophical Magazine

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“…The latter resonance is attributed to Si dangling-bond ͑DB͒ states. [5][6][7][8] The resonance at gϭ2.0043 cannot be unambiguously identified. From its resonance parameters it is probably related to dangling-bond states in Si-rich Si-O layers, 9,10 as a strong oxygen take up has been observed in secondary ion mass spectroscopy ͑SIMS͒ measurements on c-Si:H films, 11 and an increase of a signal at gϭ2.0044 in c-Si:H samples that were exposed to air for several weeks has been reported.…”

Section: Introductionmentioning

confidence: 99%

Electron spin resonance investigation of electronic states in hydrogenated microcrystalline silicon

et al. 1999

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Phosphorus-doped microcrystalline silicon with high-crystalline volume fraction was prepared by very highfrequency plasma enhanced chemical vapor deposition. The material is studied by electron spin resonance and transport measurements as a function of doping and temperature. In all samples a resonance at gϭ1.998 is found with spin densities very similar to the phosphorus dopant density and also the carrier density at high doping levels. This resonance is related to doping-induced excess electrons. Its spin density is largely temperature independent, and the corresponding electrons occupy dopant or conduction band tail states at low temperatures, while they are excited into the conduction band at high T. This gradual transition is accompanied by changes in linewidth, g value and spin-lattice relaxation time. Hyperfine interaction with P nuclei is only observed for intermediate doping levels and has very small intensity. From the value of the hyperfine splitting, the effective Bohr radius of the impurity wave function is estimated to 12 Å. Transport at low temperatures (TϽ20 K) proceeds via hopping between donor states and/or conduction-band tail states. A thermal activation energy of 3.5 meV and similar localization lengths as from the hyperfine data are found for this process. At temperatures above 20 K electronic transport is governed by a wide distribution of activation energies.

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Light induced phenomena in microcrystalline silicon

Cited by 26 publications

References 10 publications

Triplet excitons as sensitive spin probes for structure analysis of extended defects in microcrystalline silicon

Triplet excitons as sensitive spin probes for structure analysis of extended defects in microcrystalline silicon

Electrical detection of electron spin resonance in microcrystalline silicon pin solar cells

Electron spin resonance investigation of electronic states in hydrogenated microcrystalline silicon

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