Electrical detection of electron spin resonance in microcrystalline silicon pin solar cells

Behrends, Jan; Schnegg, Alexander; Fehr, Matthias; Lambertz, Andreas; Haas, Sabine; Finger, F.; Rech, Bernd; Lips, K.

doi:10.1080/14786430903008472

Cited by 15 publications

(46 citation statements)

References 53 publications

(83 reference statements)

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“…Step 5: Treat with the gray images processed by step4 using methods of erosion and expansion, then extract features using 8-connected sign [4] . Then send the result to the upper computer to display.…”

Section: Detection Stepsmentioning

confidence: 99%

Surface Defect Detection of Solar Cell Based on Difference Image Method

Cao¹,

Sheng²,

Cai³

2017

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Abstract. Aiming at the problem of the inefficient and poor anti-interference ability in solar cell detection, a novel detection method based on differential image method is proposed. This method consists of three steps: firstly, we extract the R-channel gray-scale image from the solar cell surface image; then, the gray-scale image is preprocessed and segmented to obtain the defect-free connected region; finally, the defect area is determined by the differential of the gray-scale image. Experimental results show that the proposed method can identify the defect area precisely, and the detection accuracy is greater than 98%. Moreover, the computational burden of the proposed method is very low, it only takes only 10ms to process one image with a heterogeneous multi-core processing Unit. This method can greatly improve the efficiency of solar cell detection.

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Section: Detection Stepsmentioning

confidence: 99%

Surface Defect Detection of Solar Cell Based on Difference Image Method

Cao¹,

Sheng²,

Cai³

2017

dtcse

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“…The remaining signal has been assigned to hopping transport among CE centers [g CE = 1.9975(5)] in the μc-Si:H absorber layer. 29 Since hopping transport can only occur between localized states in the mobility gap, CE centers observed here by EDMR cannot be attributed to free electrons in the conduction band (see above: model a).…”

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confidence: 99%

“…A detailed description of the experimental setup can be found in Ref. 29. Figure 1 shows a field-swept pEDMR spectrum of the μc-Si:H solar cell recorded as a transient current change 3 μs after a 100 ns microwave π pulse.…”

mentioning

confidence: 99%

“…Electrical detection in combination with a modified Hahn-echo sequence was used to measure echo modulations induced by 29 Si, 31 P, and 1 H nuclei weakly coupled to electron spins of paramagnetic sites in the amorphous and microcrystalline solar cell layers. In the case of CE centers in the μc-Si:H i-layer, the absence of 1 H ESEEM modulations indicates that the adjacencies of CE centers are depleted from hydrogen atoms.…”

mentioning

confidence: 99%

“…All measurements were carried out on a commercially available BRUKER E580 spectrometer at 9.7 GHz in a dielectric ring resonator (ER 4118X-MD5) and using a laboratory-built current detection extension. 29 π/2-microwave pulses with a length of 16 ns (S = 1/2) were generated by using a 1 kW TWT microwave amplifier. The solar cell was operated in the reverse direction (U bias = −1.0 V) and cooled to a temperature of 10 K by a Heflow cryostat, resulting in a photocurrent of 17 μA under illumination with a halogen lamp (50 mW/cm 2 ).…”

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confidence: 99%

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Electrical detection of electron-spin-echo envelope modulations in thin-film silicon solar cells

et al. 2011

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Electrically detected electron-spin-echo envelope modulations (ED-ESEEM) were employed to detect hyperfine interactions between nuclear spins and paramagnetic sites, determining spin-dependent transport processes in multilayer thin-film microcrystalline silicon solar cells. Electrical detection in combination with a modified Hahn-echo sequence was used to measure echo modulations induced by 29 Si, 31 P, and 1 H nuclei weakly coupled to electron spins of paramagnetic sites in the amorphous and microcrystalline solar cell layers. In the case of CE centers in the μc-Si:H i-layer, the absence of 1 H ESEEM modulations indicates that the adjacencies of CE centers are depleted from hydrogen atoms. On the basis of this result, we discuss several models for the microscopic origin of the CE center and conclusively assign those centers to coherent twin boundaries inside of crystalline grains in μc-Si:H.

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