Light-induced changes in the optical properties of thin films of Ge–S–Bi(Tl, In) chalcogenides

Thin Chalcogenide Films for Photonic Applications

“…Compositional variation of the refractive index and optical band-gap of chalcogenide glass thin films. The data depicted is taken from own studies and published elsewhere (Todorov et al, 2001(Todorov et al, , 2003Tasseva et al, 2005Tasseva et al, , 2007Tasseva et al, , 2010Kincl et al, 2009;Knotek et al, 2009;Petkov et al , 2009). …”

Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films

“…The parameter B is an interesting parameter, since it can be taken as a measure of disorder. For example, for GeS 2 , GeSe 2 , Ge 2 Se 3 and GeSe 3 films the values of parameter B 1/2 is 549 [14], 913 [12], 552 [12], and 827 cm -1/2 eV -1/2 [12], respectively. (Fig.…”

“…In recent decades, intensively studied are photoinduced effects in amorphous films of germanium chalcogenides [11][12][13][14][15][16][17][18]. First of all, in view of practical applications, these materials are attractive if accounting the fact that they do not contain the poisonous arsenic.…”

“…Second, in these films under illumination one can observe both effects of photodarkening and photobleaching (growth of the pseudogap and optical transparency). Moreover, while germanium sulfide films are characterized only by photobleaching [13][14][15], the films Ge x Se 100-x demonstrate both effects: photodarkening in Ge-dificient (x<20) and photobleaching in Ge-rich (x>20) samples [11,12,[16][17][18].…”

Raman spectroscopy and X-ray diffraction studies of (GeS2 )100-x(SbSI)x glasses and composites on their basis

“…Due to their high sensitivity, GeS 2 non-crystalline materials are potential candidates for being used as optical information storage media, gratings, optical diffraction elements, holographic recording media, etc. [1][2][3][4][5]. Ferroelectricsemiconductor antimony sulphoiodide (SbSI) shows excellent properties [6] and is a promising material for various applications (infrared, piezo-and pyroelectric detectors, actuators, memory, etc.…”