Thin Chalcogenide Films for Photonic Applications

Todorov, R.; Tasseva, J.; Babeva, Tsvetanka

doi:10.5772/32143

Cited by 5 publications

(7 citation statements)

References 80 publications

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“…However, 2%, 3%, and 4% concentrations reveal a slight shift and spectral broadening in the visible region, which subsequently dropped to a value of 1.00 in the near-infrared region. The high n value for the pristine film is relatively close to the reported value of 2.83 [44]. A fairly close result of 2.7 was also obtained for a solution-phase grown As2Se3 film annealed at 150 °C [45].…”

Section: Refractive Index (N) and Optical Conductivity (σ)supporting

confidence: 86%

Synthesis and Studies of Electro-Deposited Yttrium Arsenic Selenide Nanofilms for Opto-Electronic Applications

et al. 2020

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Nanocomposite films grown by incorporating varying concentrations of Yttrium, a d-block rare-earth ion, into the binary chalcogenide Arsenic selenide host matrix is here presented. Films were grown via the wet-chemical electro-deposition technique and characterized for structural, optical, surface morphology, and photoluminescence (PL) properties. The X-ray Diffraction (XRD) result of the host matrix (pristine film) showed films of monoclinic structure with an average grain size of 36.2 nm. The composite films, on the other hand, had both cubic YAs and tetragonal YSe structures with average size within 36.5–46.8 nm. The fairly homogeneous nano-sized films are shown by the Scanning Electron Microscopy (SEM) micrographs while the two phases of the composite films present in the XRD patterns were confirmed by the Raman shifts due to the cleavage of the As-Se host matrix and formation of new structural units. The refractive index peaked at 2.63 within 350–600 nm. The bandgap energy lies in the range of 3.84–3.95 eV with a slight decrease with increasing Y addition; while the PL spectra depict emission bands across the Vis-NIR spectral regions. Theoretically, the density functional theory (DFT) simulations provided insight into the changes induced in the structure, bonding, and electronic properties. Besides reducing the bandgap of the As2Se3, the yttrium addition has induced a lone pair p-states of Se contributing nearby to Fermi energy level. The optical constants, and structural and electronic features of the films obtained present suitable features of film for IR applications as well as in optoelectronics.

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Section: Refractive Index (N) and Optical Conductivity (σ)supporting

confidence: 86%

Synthesis and Studies of Electro-Deposited Yttrium Arsenic Selenide Nanofilms for Opto-Electronic Applications

et al. 2020

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“…Higher value of linear and non linear refractive index and substantial absorption in visible to NIR part of spectrum make them irreplaceable materials for mid-infrared sensing, integrated optics and ultrahigh-bandwidth signal processing. Recently, a new term -"chalcogenide photonics" -has been coined [3] and has also been used in plasmonics applications [4]. Thin films of chalcogenide glass are promising materials for use as high-resolution, gray scale photo-and electronbeam resists for nanoscale and ultrathin applications in MEMS/NEMS technology [5].…”

Section: Introductionmentioning

confidence: 99%

Theoretical prediction of physical parameters of GexSb20−x Te80 (x = 11, 13, 15, 17, 19) bulk glassy alloys

Sharma

Maheshwari

2014

Materials Science-Poland

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Physical properties of Ge x Sb 20−x Te 80 (x = 11, 13, 15, 17, 19) bulk glassy alloys are examined theoretically. Lone pair electrons are calculated using an average coordination number ( r ) and the number of valence electrons, and are found to decrease with an addition of Ge. Mean bond energy ( E ) is proportional to glass transition temperature (T g ) and shows maxima near the chemical threshold. Cohesive energy of the system is calculated using chemical bond approach. A linear relation is found between cohesive energy, band gap (calculated theoretically and confirmed experimentally) and average heat of atomization. All these parameters are increasing with an increase in Ge content. A relation between average single bond energy and photon energy is discussed. Compactness of the structure is measured from the calculated density of the glass. An attempt is made to discuss the results in terms of structure of the glass or equivalently with average coordination number.

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“…As comparative experimental data at  p are currently not available in literature, we have used the theory of the non-linear optical response of the crystalline semiconductors in order to analyze these results, similar to the approach used in [6][7][8][9]. The dependencies 2(h), n2(h) for direct-gap and indirect-gap crystalline semiconductors were obtained in [4] and [5], respectively, by using the non-linear Kramers-Kronig relation.…”

Section: Discussionmentioning

confidence: 99%

“…However, this model is incompatible with non-crystalline semiconductors that have energy levels in their bandgaps (so called gap states). Nevertheless the theory of crystalline semiconductors was used in some papers for evaluation of the non-linear optical coefficients of refraction n2 and absorption 2 of chalcogenide glasses [6][7][8][9]. (These coefficients correspond to the intensity-dependent parts of the refractive index n = n0 + n2I and absorption coefficient  =  0 + 2I, where n0 and  0 are, respectively, the linear refractive index and single-photon absorption coefficient, and I is intensity of the laser radiation.)…”

Section: Introductionmentioning

confidence: 99%

Measurement of non-linear optical coefficients of chalcogenide glasses near the fundamental absorption band edge

Романова

Kuzyutkina

Shiryaev

et al. 2018

Journal of Non-Crystalline Solids

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A time-resolved pump-probe method is used for the evaluation of non-linear optical coefficients of chalcogenide glasses from the As-S-Se and Ge-Se systems near their fundamental absorption band edges. The results are analyzed via comparison with the spectral dependencies of the non-linear optical coefficients of crystalline semiconductors; the role of electron transitions through the gap states of chalcogenide glasses is discussed.

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Thin Chalcogenide Films for Photonic Applications

Cited by 5 publications

References 80 publications

Synthesis and Studies of Electro-Deposited Yttrium Arsenic Selenide Nanofilms for Opto-Electronic Applications

Synthesis and Studies of Electro-Deposited Yttrium Arsenic Selenide Nanofilms for Opto-Electronic Applications

Theoretical prediction of physical parameters of GexSb20−x Te80 (x = 11, 13, 15, 17, 19) bulk glassy alloys

Measurement of non-linear optical coefficients of chalcogenide glasses near the fundamental absorption band edge

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