Light-Induced Annealing of Dangling Bonds in a-Si:H

Takeda, K.; Hikita, Harumi; Kimura, Yutaka; Yokomichi, Haruo; Yamaguchi, Masatoshi; Morigaki, Kazuo

doi:10.1143/jjap.36.991

Cited by 16 publications

(10 citation statements)

References 10 publications

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“…They suggested a model based on the stretched exponential degradation that consists of two different stretched exponential components with a different τ. Takeda et al suggested a model with a more practical view. 23) They fabricated a-Si:H samples having unusually high hydrogen content between 22-36 at. %, and light-soaked at various intensities.…”

Section: Self-healing and Effect Of Initial Degradationmentioning

confidence: 99%

“…An interesting aspect is that the irreversible changes in the light-induced degradation kinetics of pm-Si:H PIN solar cells can be explained by recalling the hydrogen evolution from internal surfaces. 23) Figure 4 shows the H 2 partial pressure detected during hydrogen effusion, normalized to the volume of the sample, as a function of temperature for a-Si:H and pm-Si:H PIN layer stacks on Corning glass. The hydrogen effusion spectrum of the as-deposited pm-Si:H PIN layer stack [Fig.…”

Section: Hydrogen Effusion: Modification Of Hydrogen Bonding On Silic...mentioning

confidence: 99%

“…The internal surfaces of nanovoids (or nanocrystal surface) are apparently hydrogenated with SiH and SiH 2 bonds, 28) and hydrogen can evolve during metastable defect creation. 23) During light-soaking, the hydrogen evolves and passivates newly created dangling bonds, but if the hydrogen in voids is depleted, the kinetics of the creation of dangling bonds would be similar to that of a-Si:H. In the self-healing test (Fig. 3), one could be reminded that the light-induced degradation behavior of the pm-Si:H of the second light-soaking test assimilated to that of a-Si:H, which is in contrast to the first cycle showing a significant difference.…”

Section: Hydrogen Effusion: Modification Of Hydrogen Bonding On Silic...mentioning

confidence: 99%

See 2 more Smart Citations

Light-induced changes in silicon nanocrystal based solar cells: Modification of silicon–hydrogen bonding on silicon nanocrystal surface under illumination

Kim

Johnson

Cabarrocas

2016

Jpn. J. Appl. Phys.

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Hydrogenated polymorphous silicon (pm-Si:H) is a material consisting of a small volume fraction of nanocrystals embedded in an amorphous matrix. pm-Si:H solar cells demonstrate interesting initial degradation behaviors such as rapid initial change in photovoltaic parameters and self-healing after degradation during light-soaking. The precise dynamics of the light-induced degradation was studied in a series of light-soaking experiments under various illumination conditions such as AM1.5G and filtered 570 nm yellow light. Hydrogen effusion experiment before and after light-soaking further revealed that the initial degradation of pm-Si:H solar cells originate from the modification of silicon–hydrogen bonding on the surface of silicon nanocrystals in pm-Si:H.

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Section: Self-healing and Effect Of Initial Degradationmentioning

confidence: 99%

Section: Hydrogen Effusion: Modification Of Hydrogen Bonding On Silic...mentioning

confidence: 99%

Section: Hydrogen Effusion: Modification Of Hydrogen Bonding On Silic...mentioning

confidence: 99%

See 1 more Smart Citation

Light-induced changes in silicon nanocrystal based solar cells: Modification of silicon–hydrogen bonding on silicon nanocrystal surface under illumination

Kim

Johnson

Cabarrocas

2016

Jpn. J. Appl. Phys.

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“…This may be supported by a moleculardynamics simulation which suggests that a light-induced defect is nucleated by a localized defect state (Fedders et al 1992). Note that the photoinduced annealing of defects, as shown by curve (b) in ® gure 1, has been observed for a-Si : H with a very high density of defects (Takeda et al 1997), which may occur for the condition k ¸N < 0.…”

mentioning

confidence: 91%

Kinetics of photoinduced defect creation in amorphous semiconductors: Analogy to a logistic equation in a biological system

Senda¹,

Yoshida²,

Shimakawa³

1999

Philosophical Magazine Letters

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We have found that a novel kinetic equation, similar to the logistic function in biological systems, replicates well the experimentally observed light-induced defect creation in amorphous semiconductors. It is proposed that a created defect, itself, has a triggering e ect for successive defect creation, which leads to new insight into understanding photodegradation in amorphous semiconductors.Photodegradation occurs in both hydrogenated amorphous silicon (a-Si : H) and amorphous chalcogenides (a-Ch), when illuminated by bandgap light (Shimakawa et al. 1995). The number of defects increases owing to bandgap irradiation. In a-Si : H, the creation of light-induced metastable defects (LIMDs) is now termed the Staebler± Wronski (SW) (1977) e ect.Although a great number of studies have been made to understand the origin of LIMD creation, how LIMDs are created is still not understood well (Shimakawa et al. 1995). Principally, several types of microscopic model for the SW e ect have been proposed. The most popular is based on the idea of breaking of weak Si± Si bonds induced by non-radiative recombination of band-tail electrons and holes (non-radiative recombination (NRR) model (Stutzmann et al. 1985, Morigaki 1988. The second class is the charge-transfer model in which electrons and holes are trapped at charged defects (Adler 1981). The other classes, for example, are an impurityrelated model (Red® eld and Bube 1990) and a self-trapped exciton (STE) model (Shimakawa et al. 1995) which requires a strong carrier± lattice interaction and is equivalent to bond breaking. In the NRR model (Stutzmann et al. 1985), the rate equation for inducing the defects is given bywhere N is the number of inducing defects, and n and p are the concentrations of band-tail electrons and holes respectively. Note that n and p are expected to vary inversely with N (self-limiting) and hence N is given as

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“…ESR measurements of the virtually identical hydrogenated/deuterated a-Si:H/D and µc-Si:H/D indicate that the features in the spectra of the irradiated material belong to a hydrogen-related hyperfine pattern. The nature of this center is discussed in the light of known H-related complexes found in c-Si [14][15][16][17] and suggested H-related db states in a-Si:H [32,33].…”

Section: Introductionmentioning

confidence: 99%

The relationship between hydrogen and paramagnetic defects in thin film silicon irradiated with 2 MeV electrons

Astakhov

Carius

Petrusenko

et al. 2012

J. Phys.: Condens. Matter

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After irradiation of hydrogenated amorphous and microcrystalline silicon (a-Si:H and μc-Si:H) with 2 MeV electrons at 100 K, we observe satellite-like components close to the dominating electron spin resonance (ESR) signal of these materials. The satellites overlap with the commonly observed dangling bond resonance and are proposed to originate from a hyperfine interaction with the nuclear magnetic moment of hydrogen atoms in a-Si:H and μc-Si:H. Our present study is focused on the verification of this hypothesis. Equivalent hydrogenated and deuterated a-/μc-Si:H/D materials have been investigated with ESR before and after 2 MeV electron bombardment. From the difference between ESR spectra of hydrogenated and deuterated samples we identify the doublet structure in the ESR spectra as a hyperfine pattern of hydrogen-related paramagnetic centers. The observations of H-related paramagnetic centers in a-/μc-Si:H are of particular interest in view of metastability models of a-Si:H, which include H-related complexes as precursors for the stabilization of the metastable Si dangling bonds. The nature of the observed center is discussed in the light of known H-related complexes in crystalline Si and suggested H-related dangling bonds in a-Si:H.

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Light-Induced Annealing of Dangling Bonds in a-Si:H

Cited by 16 publications

References 10 publications

Light-induced changes in silicon nanocrystal based solar cells: Modification of silicon–hydrogen bonding on silicon nanocrystal surface under illumination

Light-induced changes in silicon nanocrystal based solar cells: Modification of silicon–hydrogen bonding on silicon nanocrystal surface under illumination

Kinetics of photoinduced defect creation in amorphous semiconductors: Analogy to a logistic equation in a biological system

The relationship between hydrogen and paramagnetic defects in thin film silicon irradiated with 2 MeV electrons

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