2012
DOI: 10.2150/jlve.36.64
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Light-emission Properties of Europium-doped Tantalum-oxide Thin Films Deposited by Radio-frequency Magnetron Sputtering

Abstract: Light-emitting europium-doped tantalum-oxide thin films were prepared by radio-frequency magnetron sputtering. Red photoluminescence was obtained from the films after annealing by ultraviolet-laser excitation. Four peaks having wavelengths of around 600, 620, 650, and 700 nm were observed from films annealed at 600 to 900 C. The strongest intensity of the most remarkable 620-nm peak was obtained from the film annealed at 700 C for 20 min.

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Cited by 16 publications
(12 citation statements)
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“…4 I 15/2 ). We also reported on red or orange PL from europium-doped Ta 2 O 5 (Ta 2 O 5 :-Eu) thin films deposited using the same co-sputtering method [9]. We observed four PL peaks at wavelengths of around 600, 620, 650, and 700 nm from our Ta 2 O 5 :Eu films after annealing at 600 to 900°C.…”
Section: Introductionmentioning
confidence: 52%
“…4 I 15/2 ). We also reported on red or orange PL from europium-doped Ta 2 O 5 (Ta 2 O 5 :-Eu) thin films deposited using the same co-sputtering method [9]. We observed four PL peaks at wavelengths of around 600, 620, 650, and 700 nm from our Ta 2 O 5 :Eu films after annealing at 600 to 900°C.…”
Section: Introductionmentioning
confidence: 52%
“…We reported on green PL from erbium-doped Ta 2 O 5 (Ta 2 O 5 :Er) produced by a simple co-sputtering method using RF magnetron sputtering [5,6]. We also reported on red or orange PL from europium-doped Ta 2 O 5 (Ta 2 O 5 :Eu) thin films deposited using the same co-sputtering method [7]. We recently demonstrated near-infrared PL from thulium-doped Ta 2 O 5 (Ta 2 O 5 :Tm) thin films produced by co-sputtering [8].…”
Section: Introductionmentioning
confidence: 89%
“…We placed two, three, or four Y 2 O 3 pellets (Furuuchi Chemical Corporation, 99.9% purity, diameter 20 mm) on the Ta 2 O 5 disc. The Ta 2 O 5 disc and Y 2 O 3 pellets were co-sputtered by supplying RF power to the target [5][6][7][8]. The flow rate of Ar gas introduced into the vacuum chamber was 15 sccm, and the RF power supplied to the target was 200 W. Commercially fused-silica plates (1 mm thick) were used as substrates, and they were not heated during sputtering.…”
Section: Fabrication Of Ta 2 O 5 :Y 2 O 3 Thin Filmsmentioning
confidence: 99%
“…Thus far, we have fabricated various rare-earth doped Ta 2 O 5 thin films using a simple co-sputtering method and obtained various photoluminescence (PL) properties from the films [5] [6] [7] [8] [9]. We reported on red or orange PL from europium (Eu)-doped Ta 2 O 5 (Ta 2 O 5 :Eu) thin films deposited using the same co-sputtering method [6]. Four PL peaks at wavelengths of 600, 620, 650, and 700 nm were observed from the films after annealing, and the 620-nm peak was the strongest among the four peaks.…”
Section: Introductionmentioning
confidence: 99%