Light emission from as-prepared and oxidized Si nanowires with diameters of 5–15nm

Zhang, Z.Y.; Wu, X. L.; Jin, Shangtai; Yang, Luwei; Shi, Yi; Chu, Paul K.; Siu, G. G.

doi:10.1016/j.jcrysgro.2005.09.023

Cited by 13 publications

(7 citation statements)

References 25 publications

(42 reference statements)

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“…3͑b͔͒. [18][19][20] This indicates that the product is mainly composed of crystalline Si nanostructure in addition to a small amount of the amorphous component. In comparison, the XRD spectrum obtained from product A exhibits two broad diffraction peaks originating from amorphous Si oxide nanostructures as well as three weak crystalline Si peaks ͓Fig.…”

Section: Resultsmentioning

confidence: 99%

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Synthesis, growth mechanism, and light-emission properties of twisted SiO2 nanobelts and nanosprings

Zhang

et al. 2008

The Journal of Chemical Physics

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Amorphous twisted SiO(2) nanobelts have been synthesized on Si wafers using facile thermal evaporation. These nanobelts are produced together with SiO(2) nanowires and a small quantity of SiO(2) nanosprings. Spectral and microstructural analyses suggest that the twisted SiO(2) nanobelts and nanosprings form via a polar surface driven process. Spontaneous polarization on the very thin polar crystalline SiO(2) layers on the amorphous SiO(2) nanobelt and nanospring surfaces makes the nuclei rearrange orderly and causes the nanobelt and nanowire to roll up at a certain twisty angle. The cathodoluminescence spectrum acquired from these SiO(2) nanostructures reveals three emission bands at 4.4, 3.7, and 2.7 eV originating from oxygen-related defect centers. The polar surface driven mechanism can adequately explain the growth of these novel twisty nanobelts and nanosprings which have potential applications in sensors, transducers, resonators, and photonics.

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Section: Resultsmentioning

confidence: 99%

“…3͑a͔͒. 20 Note that the ͑100͒ peak originates from the Si substrate. The XRD results indi-cate that under our experimental conditions, the distance between the vapor source and Si substrate is a very important parameter in the formation of the different nanostructures.…”

Section: Resultsmentioning

confidence: 99%

Synthesis, growth mechanism, and light-emission properties of twisted SiO2 nanobelts and nanosprings

Zhang

et al. 2008

The Journal of Chemical Physics

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“…SiNWs larger than L 20 nm generally grow along the [111] direction, and with smaller diameters of a few nanometers the [211] growth direction is preferable. 33 The crystallographic lattice structure at the interface is important for defining the structural characteristics of the nanowires. During VLS growth, the interface between the catalyst and the nanowire prefers to take the least lattice mismatch and requires a reasonable value to promote the epitaxial growth.…”

Section: Chemistry and Growthmentioning

confidence: 99%

Fe-Assisted Synthesis of Si Nanowires

et al. 2009

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Ultrafine and pure Si-nanowires (SiNWs) have been synthesized with the assistance of carbon nanotubes (CNTs) during a chemical vapor deposition process via the vapor liquid solid (VLS) mechanism. A mixture of CNTs and Si 3 N 4 produces a high yield of fine SiNWs upon heating at 1600 °C under Ar atmosphere. Fe nanoparticles, located at the tip of CNTs, have been employed as a catalyst for the growth of nanowires and carbon acted as a reducing agent during the synthesis process. The resulting SiNWs have been appraised by SEM, TEM, XRD, Raman, BET, and FTIR to investigate the morphology, structure, and surface characteristics. Electron microscopic studies have demonstrated that the SiNWs have a uniform diameter of 7-17 nm, being single crystalline and enveloped with a tiny sheath of SiO x (x ) 1∼2). Furthermore, hydrofluoric acid etching can remove the oxide shell, leading to much purer and finer SiNWs. Nitrogen-sorption isotherms indicate that SiNWs have very high BET specific surface areas. The high yield, ultrafine size, and large surface areas cumulatively offer these nanowires a great potential as candidates for advanced applications in nanodevices, fuel cells, and catalysis.

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“…Si 1D materials such as nanowires (SiNWs) and nanotubes (SiNTs) have promising properties. − They are, for example, expected to serve as exciton splitting edges in future organic−inorganic photovoltaics . Si 1D materials have a high surface-to-volume ratio, which is advantageous for the attachment of functional molecules. − The permeability of a SiNT may render it suitable for chemical sensors and molecule incorporation for controlled therapeutic agents.…”

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confidence: 99%

Low-Temperature Growth of Silicon Nanotubes and Nanowires on Amorphous Substrates

et al. 2010

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Silicon one-dimensional (Si 1D) materials are of particular relevance due to their prospect as versatile building materials for nanoelectronic devices. We report the growth of Si 1D structures from quasi-hexagonally ordered gold (Au) nanoparticle (NP) arrays on borosilicate glass (BSG) and SiOx/Si substrates. Using hydrogen instead of oxygen plasma during NP preparation enhances the catalytic activity of AuNPs (diameters of 10-20 nm), enabling Si 1D growth at temperatures as low as 320 degrees C. On BSG, Si nanowires (SiNWs) are identified and reasonable vertical alignment is achieved at 420 degrees C. On SiOx/Si, only Si nanotubes (SiNTs) are obtained right up to 420 degrees C. A mixture of SiNTs and SiNWs is observed at 450 degrees C and only SiNWs grow at 480 degrees C.

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Light emission from as-prepared and oxidized Si nanowires with diameters of 5–15nm

Cited by 13 publications

References 25 publications

Synthesis, growth mechanism, and light-emission properties of twisted SiO2 nanobelts and nanosprings

Synthesis, growth mechanism, and light-emission properties of twisted SiO2 nanobelts and nanosprings

Fe-Assisted Synthesis of Si Nanowires

Low-Temperature Growth of Silicon Nanotubes and Nanowires on Amorphous Substrates

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