Amorphous twisted SiO(2) nanobelts have been synthesized on Si wafers using facile thermal evaporation. These nanobelts are produced together with SiO(2) nanowires and a small quantity of SiO(2) nanosprings. Spectral and microstructural analyses suggest that the twisted SiO(2) nanobelts and nanosprings form via a polar surface driven process. Spontaneous polarization on the very thin polar crystalline SiO(2) layers on the amorphous SiO(2) nanobelt and nanospring surfaces makes the nuclei rearrange orderly and causes the nanobelt and nanowire to roll up at a certain twisty angle. The cathodoluminescence spectrum acquired from these SiO(2) nanostructures reveals three emission bands at 4.4, 3.7, and 2.7 eV originating from oxygen-related defect centers. The polar surface driven mechanism can adequately explain the growth of these novel twisty nanobelts and nanosprings which have potential applications in sensors, transducers, resonators, and photonics.
111-oriented p-type Si wafer with a resistivity of 1-5 Omega cm was implanted with Fe+ and then annealed at 1100 degrees C in N2 for 60 min, followed by anodization in a solution of HF to form porous structure with beta-FeSi2 nanocrystallites. Photoluminescence (PL) spectral measurements show that a strong PL peak appears in the range of 610-670 nm. The position of the PL peak remains unchanged, but its intensity increases with the storage time in air until about three months and then saturates. C60 molecules were chemically coupled on the porous structure through a kind of silane coupling agent to form a nanocomposite. It is revealed that the stable PL peak monotonically shifts to a pinning wavelength at 570 nm. Experimental results from PL, PL excitation, Raman scattering, and x-ray diffraction measurements clearly show that the pinned PL originates from optical transition in C60-related defect states, whereas the photoexcited carriers occur in the beta-FeSi2 nanocrystallites formed during anodization. This work opens a new way to tailor nanometer environment for seeking optimal luminescent properties.
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