Lift-off process for nanoimprint lithography

Carlberg, Patrick; Graczyk, Mariusz; Sarwe, Eva-Lena; Maximov, Ivan; Beck, Marc; Montelius, Lars

doi:10.1016/s0167-9317(03)00072-8

Cited by 46 publications

(39 citation statements)

References 8 publications

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“…The wafers were then spin coated (3000 rpm, 30 s) with PMMA-950 (diluted in anisol 8%) (Micro-chem corp, USA). The wafers were hard baked in oven (180 1C, 30 min), and then subjected to nanoimprinting using a silicon master stamp (made with the electron beam lithography (EBL) and lift off technique, [15,16]). The imprinting was carried out at 50 bar/180 1C (using a prototype imprinting machine: ''Nanoimprint 2,5 TOM'').…”

Section: Fabrication Of Substrata: Nanoimprinted Negative Patternmentioning

confidence: 99%

Axonal outgrowth on nano-imprinted patterns

et al. 2006

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Section: Fabrication Of Substrata: Nanoimprinted Negative Patternmentioning

confidence: 99%

Axonal outgrowth on nano-imprinted patterns

et al. 2006

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“…Since the LOR underlayer and lithography resist have different selective dissolution chemistries, the developing LOR can penetrate beneath the lithography resist pattern to form a naturally undercut profile favorable to metal lift-off. [19][20][21] Similarly, nanoimprinting has been performed on a bilayer resist system composed of lift-off resistpoly(methyl methacrylate) (LOR-PMMA), followed by removal of the imprint residue on the PMMA by either oxygen plasma etching 19 or developer solution. 20,21 Since LOR is dissolved isotropically, the developing LOR underlayer can be finely controlled beneath the imprinted pattern to prevent it from collapsing.…”

Section: -12mentioning

confidence: 99%

“…[19][20][21] Similarly, nanoimprinting has been performed on a bilayer resist system composed of lift-off resistpoly(methyl methacrylate) (LOR-PMMA), followed by removal of the imprint residue on the PMMA by either oxygen plasma etching 19 or developer solution. 20,21 Since LOR is dissolved isotropically, the developing LOR underlayer can be finely controlled beneath the imprinted pattern to prevent it from collapsing. Unfortunately, this procedure demands restrictive wet-etching optimization, which offers no guarantee of stability or repeatability, due to its substantially sensitive nature.…”

Section: -12mentioning

confidence: 99%

Advanced metal lift-offs and nanoimprint for plasmonic metal patterns

Sung

Kim

Lee

et al. 2014

Int. J. of Precis. Eng. and Manuf.-Green Tech.

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An effective and reliable fabrication approach for silver nanostructure arrays was developed using UV nanoimprint with a lift-off resist and a Si-based etch mask for enhanced plasmonic resonance-driven device performance. Since a tapered nanopillar array is imprinted on the resist, by coating it with a Si-based etch mask layer and carrying out the etching procedure, a reverse-tapered nanohole array for metal deposition can be crated. Compared to the conventional lift-off process, a more tolerable window of lifeoff process conditions is possible, and dot patterns with high-aspect-ratio thickness profiles and no rabbit ears can be fabricated. Simulation results corresponding to dot diameters of 150, 235, and 265 nm (twice those in their period) were qualitatively in good agreement with experimental results in terms of transmittance. This suggests that the proposed technique is a fairly reliable and accessible fabrication strategy for applications.

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“…Generally, in nano-fabrication field, the EBL plays a fundamental part in the Lift-Off technique, together with the use of the Poly-Methyl-Methacrylate (PMMA), or with the assistance of other materials [21,22,23]. The PMMA is the most common positive e-resist used for the EBL, and this is due for its flexibility and other well known features [11], as well for its possibility to reach high resolution [24,25,26].…”

Section: Introductionmentioning

confidence: 99%

Dose influence on the PMMA e-resist for the development of high-aspect ratio and reproducible sub-micrometric structures by electron beam lithography

Veroli

Mura

Balucani

et al. 2016

AIP Conference Proceedings

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In this work, a statistical process control method is presented showing the accuracy and the reliability obtained with of PMMA E-resist AR-P 672, using an Elphy Quantum Electron Beam Lithography module integrated on a FE-SEM Zeiss Auriga instrument. Reproducible nanostructures with an high aspect ratio between e-resist thickness and width of written geometric structure are shown. Detailed investigation of geometry features are investigated with dimension in the range of 200nm to 1-m. The adopted method will show how tuning the Area Dose factor and the PMMA thickness it was possible to determine the correct and reproducible parameters that allows to obtain well defined electron-beam features with a 4:1 aspect ratio. Such high aspect ratio opens the possibility to realize an electron-beam lithography lift-off process by using a standard e-beam resist. © 2016 Author(s)

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Lift-off process for nanoimprint lithography

Cited by 46 publications

References 8 publications

Axonal outgrowth on nano-imprinted patterns

Axonal outgrowth on nano-imprinted patterns

Advanced metal lift-offs and nanoimprint for plasmonic metal patterns

Dose influence on the PMMA e-resist for the development of high-aspect ratio and reproducible sub-micrometric structures by electron beam lithography

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