2016
DOI: 10.1063/1.4954493
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Dose influence on the PMMA e-resist for the development of high-aspect ratio and reproducible sub-micrometric structures by electron beam lithography

Abstract: In this work, a statistical process control method is presented showing the accuracy and the reliability obtained with of PMMA E-resist AR-P 672, using an Elphy Quantum Electron Beam Lithography module integrated on a FE-SEM Zeiss Auriga instrument. Reproducible nanostructures with an high aspect ratio between e-resist thickness and width of written geometric structure are shown. Detailed investigation of geometry features are investigated with dimension in the range of 200nm to 1-m. The adopted method will sh… Show more

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Cited by 6 publications
(3 citation statements)
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“…The smallest geometric dimension of the system was the width of the comb-drive fingers (600 nm); in order to reach it, a sub-micrometric lithographic resolution is required: the geometries definition was carried out using Electron Beam Lithography (EBL) on an e-resist polymeric film [44].…”
Section: Fabricationmentioning
confidence: 99%
“…The smallest geometric dimension of the system was the width of the comb-drive fingers (600 nm); in order to reach it, a sub-micrometric lithographic resolution is required: the geometries definition was carried out using Electron Beam Lithography (EBL) on an e-resist polymeric film [44].…”
Section: Fabricationmentioning
confidence: 99%
“…Electron Beam Lithography (EBL) was required, in order to obtain submicrometric resolution, on 157 an electron-sensible polymeric film [44]; A glow discharge with a power density of 25 mW/cm 2 , for 1 h.…”
mentioning
confidence: 99%
“…Typically, exposure dose ranges from 1 to 10 μC/cm2. In comparison, popular EBL resists such as polymethylmethacrylate (PMMA) which requires dose in thousands of μC/cm2 [108]. Due to its lose dose requirement, the writing of patterns can be done in a fraction of seconds.…”
Section: Post Exposure Delay (Ped) -Enhancement Of Featurementioning
confidence: 99%