Lifetime Identification of Thermal Oxidation Process Induced Contamination in Silicon Wafers

Daio, Hiroshi; Yakushiji, Kenji; Shimura, Fumio

doi:10.4028/www.scientific.net/msf.196-201.1817

Cited by 8 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, it is important to note that, in this work, independently determined capture coefficients for the modeling of carrier recombination due to iron contamination were used. Compared to our recent work, 13 where the capture coefficients were extracted from a detailed investigation on lifetime data ͓mainly measured using surface photovoltage ͑SPV͒ and microwave detected photoconductivity decay ͑-PCD͒ techniques͔ reported for ironcontaminated p-and n-type silicon, additional datasets were also examined, [16][17][18][19] which resulted in a minor change ͑maximum of 10%͒ of the capture coefficient values ͑see Table I͒. The values presented here and in our recent work 13 agree well with the data from an extensive quasi steady-state photoconductance ͑QSSPC͒ lifetime study by Rein.…”

Section: Data Evaluation and Simulationmentioning

confidence: 99%

Detailed Carrier Lifetime Analysis of Iron-Contaminated Boron-Doped Silicon by Comparison of Simulation and Measurement

Rommel

Bauer

Ryssel

2008

J. Electrochem. Soc.

View full text Add to dashboard Cite

In this work, an extensive injection-level-dependent carrier lifetime study on intentionally iron-contaminated boron-doped silicon has been performed by using the Elymat carrier lifetime method. The influence of both iron and boron concentrations is investigated. Results from both Elymat measurement modes are considered and critically compared to simulations and deep level transient spectroscopy measurements. The results clearly indicate that for low injection conditions, surface passivation with diluted hydrofluoric acid is not sufficient, whereas so-called electrostatic passivation allows for correct lifetime measurements. Results from both Elymat measurement modes are modeled consistently. The results prove that using optimized measurement and evaluation procedures, the Elymat method is an appropriate technique for the quantitative determination of iron in case of iron being the relevant contaminant in boron-doped silicon.

show abstract

Section: Data Evaluation and Simulationmentioning

confidence: 99%

Detailed Carrier Lifetime Analysis of Iron-Contaminated Boron-Doped Silicon by Comparison of Simulation and Measurement

Rommel

Bauer

Ryssel

2008

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…Therefore it is important to note that in this work independently determined capture coefficients for the modeling of carrier recombination due to iron contamination were used. Compared to our recent work (13) where the capture coefficients were extracted from a detailed investigation on lifetime data (mainly measured using SPV and µ-PCD techniques) published for iron contaminated p-and ntype silicon additional published data sets were also examined (14,15,16,17) which resulted in a minor change (maximum of 10%) of the capture coefficient values (see table I). The values presented here and in our recent work agree very well with the recently published data from an extensive QSSPC lifetime study by Rein (3).…”

Section: Data Evaluation and Simulationmentioning

confidence: 99%

Detailed Photocurrent Analysis of Iron Contaminated Boron Doped Silicon by Comparison of Simulation and Measurement

2007

View full text Add to dashboard Cite

In this work, an extensive injection level dependent carrier lifetime study on intentionally iron contaminated boron-doped silicon has been performed by using the Elymat carrier lifetime method. The influence of both, iron and boron concentrations is investigated. Results from both Elymat measurement modes are considered and critically compared with simulations. The results clearly indicate that for low injection conditions, surface passivation with diluted HF is not sufficient whereas so-called electrostatic passivation allows for correct lifetime measurements. For the first time, results from both Elymat measurement modes are modeled consistently. The results prove that using optimized measurement and evaluation procedures the Elymat method is an appropriate technique for the quantitative determination of iron in case of iron being the relevant contaminant in boron doped silicon.

show abstract

“…The electron and hole capture cross-sections of interstitial iron (Fe i + ) are presented in the literature [3,4]: σ n = 2 -3.5 x 10 -14 cm 2 σ p = 2 -3.0 x 10 -16 cm 2 9)…”

Section: A Model Deep Impurity: Interstitial Fe In Siliconmentioning

confidence: 99%

Large-signal injection-level spectroscopy of impurities in silicon

Ahrenkiel¹,

Johnston²

1999

AIP Conference Proceedings

View full text Add to dashboard Cite

ABSTRACT. Deep level defects in silicon are identified by measuring the recombination lifetime as a function of the injection level. The basic models for recombination at deep and shallow centers is developed. The defect used for the theoretical model is the well-known interstitial Fe ion in silicon. Data are presented on silicon samples ranging in defect content from intentionally Fe-doped samples to an ultrapure float-zone grown sample. These data are analyzed in terms of the injection-level spectroscopy model.

show abstract

Lifetime Identification of Thermal Oxidation Process Induced Contamination in Silicon Wafers

Cited by 8 publications

References 0 publications

Detailed Carrier Lifetime Analysis of Iron-Contaminated Boron-Doped Silicon by Comparison of Simulation and Measurement

Detailed Carrier Lifetime Analysis of Iron-Contaminated Boron-Doped Silicon by Comparison of Simulation and Measurement

Detailed Photocurrent Analysis of Iron Contaminated Boron Doped Silicon by Comparison of Simulation and Measurement

Large-signal injection-level spectroscopy of impurities in silicon

Contact Info

Product

Resources

About