Abstract:ABSTRACT. Deep level defects in silicon are identified by measuring the recombination lifetime as a function of the injection level. The basic models for recombination at deep and shallow centers is developed. The defect used for the theoretical model is the well-known interstitial Fe ion in silicon. Data are presented on silicon samples ranging in defect content from intentionally Fe-doped samples to an ultrapure float-zone grown sample. These data are analyzed in terms of the injection-level spectroscopy mod… Show more
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