2004
DOI: 10.1007/978-3-540-30205-6_5
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Leakage in CMOS Circuits – An Introduction

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Cited by 22 publications
(12 citation statements)
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“…From a system level view, the dominant leakage parameters [8] described in Section 1 can be identified and predicted. In [17], a flow for modeling the thermal dependence of the leakage was presented, and in [18,19], thermally dependent leakage estimation was combined with a chip-wide temperature prediction, thus also regarding the electro-thermal back-coupling introduced by the subthreshold current's thermal dependence.…”
Section: Related Workmentioning
confidence: 99%
See 1 more Smart Citation
“…From a system level view, the dominant leakage parameters [8] described in Section 1 can be identified and predicted. In [17], a flow for modeling the thermal dependence of the leakage was presented, and in [18,19], thermally dependent leakage estimation was combined with a chip-wide temperature prediction, thus also regarding the electro-thermal back-coupling introduced by the subthreshold current's thermal dependence.…”
Section: Related Workmentioning
confidence: 99%
“…To make leakage estimation accuracy comparable, our leakage models will have to regard all known parameters influencing leakage [8].…”
Section: Introductionmentioning
confidence: 99%
“…On the one hand, short-circuit power can be modeled in a similar way to dynamic power by introducing an equivalent capacitance [4]. On the other hand, leakage power is no longer negligible in current technologies and is being extensively studied by the scientific community [5]. However, only partial progress has been made in modeling and estimating internal power consumption by proposing approximate statistical analyses [6] or generalist behavioral models for the internal states of the gate [7], and no quantitative analysis has yet been found to demonstrate the relevance of this internal power consumption with respect to the total power consumption of a gate.…”
Section: Introductionmentioning
confidence: 99%
“…the frequency f within set F of applicable discrete frequency levels, and how many transistors are switching, i.e. on the code executed [57]. There are more influence factors such as temperature, but for simplification we assume that minimum possible voltage for a given frequency (and vice versa) are linearly related, and that for compute intensive tasks, the instruction mix is such that we know the average number of transistors switching.…”
Section: Energy Modelmentioning
confidence: 99%