Leakage current asymmetry and resistive switching behavior of SrTiO3

Mojarad, Shahin A.; Goss, Jonathan P.; Kwa, Kelvin S. K.; Zhou, Zhiyong; Al-Hamadany, Raied; Appleby, Daniel J. R.; Ponon, Nikhil; O'Neill, AG

doi:10.1063/1.4764544

Cited by 27 publications

(12 citation statements)

References 13 publications

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“…The consistent variation of the P r and J indicates the possible contribution of J to the ferroelectric properties of STF thin films, most probably through the oxygen vacancies and the defect dipoles. Though the difference between the pure STO and STF thin films is about a 1–2 order of magnitude, the J in the films is low enough compared to that of the atomic layer deposition pure STO films [39], which indicates a potential application in dielectric devices.…”

Section: Resultsmentioning

confidence: 99%

Room Temperature Tunable Multiferroic Properties in Sol-Gel-Derived Nanocrystalline Sr(Ti1−xFex)O3−δ Thin Films

et al. 2017

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Sr(Ti1−xFex)O3−δ (0 ≤ x ≤ 0.2) thin films were grown on Si(100) substrates with LaNiO3 buffer-layer by a sol-gel process. Influence of Fe substitution concentration on the structural, ferroelectric, and magnetic properties, as well as the leakage current behaviors of the Sr(Ti1−xFex)O3−δ thin films, were investigated by using the X-ray diffractometer (XRD), atomic force microscopy (AFM), the ferroelectric test system, and the vibrating sample magnetometer (VSM). After substituting a small amount of Ti ion with Fe, highly enhanced ferroelectric properties were obtained successfully in SrTi0.9Ti0.1O3−δ thin films, with a double remanent polarization (2Pr) of 1.56, 1.95, and 9.14 μC·cm−2, respectively, for the samples were annealed in air, oxygen, and nitrogen atmospheres. The leakage current densities of the Fe-doped SrTiO3 thin films are about 10−6–10−5 A·cm−2 at an applied electric field of 100 kV·cm−1, and the conduction mechanism of the thin film capacitors with various Fe concentrations has been analyzed. The ferromagnetic properties of the Sr(Ti1−xFex)O3−δ thin films have been investigated, which can be correlated to the mixed valence ions and the effects of the grain boundary. The present results revealed the multiferroic nature of the Sr(Ti1−xFex)O3−δ thin films. The effect of the annealing environment on the room temperature magnetic and ferroelectric properties of Sr(Ti0.9Fe0.1)O3−δ thin films were also discussed in detail.

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Section: Resultsmentioning

confidence: 99%

Room Temperature Tunable Multiferroic Properties in Sol-Gel-Derived Nanocrystalline Sr(Ti1−xFex)O3−δ Thin Films

et al. 2017

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“…They also observed that the device current and hysteresis behavior were strongly dependent on the bias-voltage. The asymmetric I-V feature might be explained by the different interface barrier height due to the application of electrodes (Au and Ag) [35,36]. The other SrTiO 3 samples with different annealing times also displayed similar resistive switching behavior (not shown here).…”

Section: Resultsmentioning

confidence: 74%

Resistance Switching Behavior in Rectangle-Nano-Pattern SrTiO3 Induced by Simple Annealing

et al. 2019

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The tunability of semi-conductivity in SrTiO3 single crystal substrates has been realized by a simple encapsulated annealing method under argon atmosphere. This high temperature annealing-induced property changes are characterized by the transmission spectra, scanning electron microscopy (SEM) and synchrotron-based X-ray absorption (XAS). We find the optical property is strongly influenced by the annealing time (with significant decrease of transmittance). A sub gap absorption at ~427 nm is detected which is attributed to the introduction of oxygen vacancy. Interestingly, in the SEM images, annealing-induced regularly rectangle nano-patterns are directly observed which is contributed to the conducting filaments. The XAS of O K-edge spectra shows the changes of electronic structure by annealing. Very importantly, resistance switching response is displayed in the annealed SrTiO3 single crystal. This suggests a possible simplified route to tune the conductivity of SrTiO3 and further develop novel resistance switching materials.

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“…Displacement was defined as the reversible movement of OVs under electrical bias (the OVs cannot get enough energy to go over the Schottky barrier), where upon removal of the applied voltage the OVs return to their initial locations. Migration occurred when the field-driven movement of the vacancies was not reversible upon removal of the bias (the OVs can get enough energy to go over the Schottky barrier) [ 47 ].…”

Section: Resultsmentioning

confidence: 99%

Switching Characteristics and High-Temperature Dielectric Relaxation Behaviours of Pb(Zn1/3Nb2/3)0.91Ti0.09O3 Single Crystal

et al. 2017

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This work evaluated the resistance switching characteristics in the (100)-oriented Pb(Zn1/3Nb2/3)0.91Ti0.09O3 (PZNT) single crystal. The current hysteresis can be closely related to the ferroelectric polarization and we provided a possible explanation using a model about oxygen vacancies to analyze the mechanism of switching. The obvious frequency dispersion of the relative permittivity signified the relaxer-type behavior of the sample. The value of the relaxation parameter γ = 1.48 was estimated from the linear fit of the modified Curie-Weiss law, indicating the relaxer nature. High-temperature dielectric relaxation behaviors were revealed in the temperature region of 400–650 °C. In addition, under the measuring frequency of 10 kHz, εr was tunable by changing the electric field and the largest tunability of εr reached 14.78%. At room temperature, the high pyroelectric coefficient and detectivity figure of merit were reported.

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Leakage current asymmetry and resistive switching behavior of SrTiO3

Abstract: Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxidesemiconductor field-effect transistors

Cited by 27 publications

References 13 publications

Room Temperature Tunable Multiferroic Properties in Sol-Gel-Derived Nanocrystalline Sr(Ti1−xFex)O3−δ Thin Films

Room Temperature Tunable Multiferroic Properties in Sol-Gel-Derived Nanocrystalline Sr(Ti1−xFex)O3−δ Thin Films

Resistance Switching Behavior in Rectangle-Nano-Pattern SrTiO3 Induced by Simple Annealing

Switching Characteristics and High-Temperature Dielectric Relaxation Behaviours of Pb(Zn1/3Nb2/3)0.91Ti0.09O3 Single Crystal

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