Layout of Series-connected SiC MOSFET Devices for Medium Voltage Applications

Li, Chengmin; Zheng, Renju; Li, Wuhua; He, Xiangning; Hu, Weifeng

doi:10.1109/wipdaasia.2018.8734562

Cited by 4 publications

(2 citation statements)

References 10 publications

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“…The stray inductance of the power block is the result of the stray inductance of the laminated busbar and the device's internal stray inductance. The laminated bus bar design has been discussed in [31] and the total inductance is 115 nH. The internal inductance of the power module is 13 nH, which is obtained from the datasheet.…”

Section: Prototyping Of 96 Kv/200 a Power Blockmentioning

confidence: 99%

“…The current source gate driver for the series connection of SiC MOSFETs is reported in [29]. The series connection of the SiC MOSFETs with capacitor snubber under soft-switching conditions has been reported in [30,31], where the device turns off at a relatively low current at 5 kV/400 V DC LLC converter. However, for a general case, previous work lacks a thorough analysis on the dynamic performance of the series connection of power devices (both active devices and the freewheel diodes), including the switching loss/speed under various operation conditions, continuous running under variable load currents and integration into the medium voltage high power converters.…”

Section: Introductionmentioning

confidence: 99%

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A highly efficient power block with series connection of power SiC MOSFETs‐design, characterization and assessment in MV converters

Zhu

et al. 2022

IET Power Electronics

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Implementation of the series connection of the SiC MOSFETs in medium voltage (MV) high power converters faces a series of challenges, including the electrical/thermal stress imbalance, insulation coordination design, high dv/dt elimination and robustness under variable operating conditions. This paper stresses these challenges and proposes a comprehensive design of a 9.6 kV/200 A power block based on the series connection of SiC MOSFETs. The power block has been verified under the continuous operation, which demonstrates the highly efficient and reliable operation under the variable switching current condition. Afterward, performance screening in a 5 kV/1 MW inverter is conducted to assess the efficiency in MV converters. Compared with the advanced high voltage high power devices, the proposed power block demonstrates fast switching speed and low switching loss, which indicates that the series connection of SiC MOSFETs is a promising technique to expand the operation voltage/power of the SiC MOSFETs to the MV megawatt level. The proposed design can be expanded to other specifications as well.

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Section: Prototyping Of 96 Kv/200 a Power Blockmentioning

confidence: 99%