A Modified RC Snubber With Coupled Inductor for Active Voltage Balancing of Series-Connected SiC MOSFETs

Li, Chengmin; Chen, Saizhen; Luo, Haoze; Li, Chushan; He, Xiangning

doi:10.1109/tpel.2021.3068667

Cited by 32 publications

(10 citation statements)

References 30 publications

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“…(3) Active gate compensation strategy: the core principle is compensating the gate charge of individual power device accurately for the VB purpose by online detecting the voltage unbalancing degree. To realize voltage unbalancing detection, one approach is using coupled inductors in resistor-capacitor (RC) snubbers to output the dv/dt difference [6]- [7]. Another approach is adopting analog-to-digital converters (ADCs) to sample the voltages and the digital controller to make the difference.…”

Section: Introductionmentioning

confidence: 99%

Voltage Balancing of Series-Connected SiC mosfets With Adaptive-Impedance Self-Powered Gate Drivers

Wang

Jørgensen

Liu

et al. 2023

IEEE Trans. Ind. Electron.

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Passive clamping snubbers for voltage balancing (VB) series connected power devices exhibit strong applicability and high robustness, moreover, they are particularly suitable for the emerging fast-switching silicon-carbide (SiC) metal-oxide-semiconductor fieldeffect transistors (MOSFETs). However, the compromise still exists as a better VB performance comes at a penalty of a larger loss of snubber. Consequently, in this paper, novel adaptive-impedance "snubbers" are proposed for series connected SiC MOSFETs on the basis of converterbased self-powered gate driver design, and a better tradeoff is achieved between loss and VB both in static and dynamic states. Further, the proposed passive VB strategy could be combined with an active delay control strategy by introducing an extra closed-loop controller. Benefiting from a more accurately established small-signal system model, the closed-loop numerical parameters are easier to design. As a result, well-balanced voltage distribution is realized during the continuously switching process of series connected SiC MOSFETs. To verify the effectiveness, a comprehensive analysis is firstly provided as guidance, followed by the corresponding detailed hardware and software design. Finally, the experiments are conducted by using two SiC MOSFETs, which show excellent VB performance at a 110 kV/µs switching speed. 1

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Section: Introductionmentioning

confidence: 99%

Voltage Balancing of Series-Connected SiC mosfets With Adaptive-Impedance Self-Powered Gate Drivers

Wang

Jørgensen

Liu

et al. 2023

IEEE Trans. Ind. Electron.

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“…Each pole of 3L-NPC is composed of two seriesconnected 10 kV SiC MOSFETs and an RC snubber circuit to ensure the voltage balancing across the switch, as shown in Fig. 2 [11], [12]. The converter's pole sustainability increases with the two series-connected switches.…”

Section: Introductionmentioning

confidence: 99%

Fault-Tolerant Control and Isolation Method for NPC-Based AFEC Using Series-Connected 10kV SiC MOSFETs

2022

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Power Conditioning Systems (PCS) based on three-level converters with series-connected 10kV SiC MOSFETs have gained popularity for medium voltage applications with the increase in distributed energy sources. With the use of Silicon Carbide (SiC), a wide bandgap semiconductor composed of Silicon (Si) and Carbon (C), MOSFET increases in power electronics application due to higher switching frequency operations. A high switching frequency such as 10 kHz or more leads to a reduction in magnetic components' size and the PCS structure's size. Therefore, the smaller, modular, and lightweight PCS can be attained for micro-grid integration, EV charging, or high inertia-dominated power grid applications. The three-level NPC (3L-NPC) inverter using series-connected 10kV SiC MOSFET is a suitable topology for coupling the PCS with the medium-voltage utility grid. The converter's pole sustainability increases with the two series-connected switches, yet the switches are still sensitive and prone to malfunction under various environmental and mechanical causes. Therefore, a meticulous fault isolation and coordination design may be necessary for the front-end converter for possible switch faults in the converter poles. A well-designed fault-tolerant controller may sustain the converter operation under fault conditions while protecting the healthy parts of the converter. Besides, it minimizes the harmful effects of fault on the grid side and increases the system availability. This paper analyzes short and open circuit switch faults that might occur in the PCS. Accordingly, a fault-tolerant method and a fault isolation method are proposed. The proposed methods are verified with Saber™ and the Real-Time Digital Simulator simulation platforms.

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“…Pang Lei et al [19] used the guide of capacitive redistribution of the gate parasitic capacitance charge during the switching process to form a single-drive 10 kV high-voltage common-gate common-source switch using 10 1.2 kV SiC MOSFETs in series. Wuhua Li et al [20] proposed a circuit composed of a resistor-capacitor (RC) snubber with a coupled inductor to effectively sense the voltage imbalance and add a compensated signal to the gate driving voltage. In the 1.2 kV module, the method has been proven to be effective.…”

Section: Introductionmentioning

confidence: 99%

“…Wuhua Li et al. [20] proposed a circuit composed of a resistor‐capacitor (RC) snubber with a coupled inductor to effectively sense the voltage imbalance and add a compensated signal to the gate driving voltage. In the 1.2 kV module, the method has been proven to be effective.…”

Section: Introductionmentioning

confidence: 99%

A novel high‐voltage solid‐state switch based on the SiC MOSFET series and its overcurrent protection

Sun

Liao

et al. 2022

High Voltage

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All‐solid‐state switches are one of the core components of pulsed power supply systems. However, the voltage level of a single switch is limited. By optimizing the chip structure, the voltage level of a single switch can be improved. Due to the immaturity of the production process and the positive correlation between the blocking voltage and the on‐resistance of the switch, it is difficult to improve the blocking voltage and the continuous forward current of a single switch simultaneously. The series‐connected switch is a way to increase the switch's blocking voltage without reducing the switch's continuous forward current. Magnetically coupled isolated drive and resistor‐capacitor forced voltage equalization techniques are investigated to increase the blocking voltage of the switches using multiple SiC metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) in series connections. Meanwhile, a special overcurrent protection scheme is designed to improve the reliability of the series‐connected switch. Finally, a high‐voltage solid‐state switch is developed based on the SiC MOSFET series connections, whose output pulse width is adjustable from 20 to 300 μs, frequency is adjustable from 1 Hz to 3 kHz, the maximum output voltage can reach 57 kV (1 Hz), and the overcurrent protection time is about 1 μs.

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A Modified RC Snubber With Coupled Inductor for Active Voltage Balancing of Series-Connected SiC MOSFETs

Cited by 32 publications

References 30 publications

Voltage Balancing of Series-Connected SiC mosfets With Adaptive-Impedance Self-Powered Gate Drivers

Voltage Balancing of Series-Connected SiC mosfets With Adaptive-Impedance Self-Powered Gate Drivers

Fault-Tolerant Control and Isolation Method for NPC-Based AFEC Using Series-Connected 10kV SiC MOSFETs

A novel high‐voltage solid‐state switch based on the SiC MOSFET series and its overcurrent protection

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