Layered SnSe nanoflakes with anharmonic phonon properties and memristive characteristics

Buruiana, Angel-Theodor; Bocîrnea, Amelia Elena; Kuncser, Andrei; Tite, Teddy; Matei, Elena; Mihai, Claudia; Zawadzka, Natalia; Olkowska‐Pucko, Katarzyna; Kipczak, Łucja; Babiński, A.; Molas, Maciej R.; Velea, A.; Gâlcă, A.C.

doi:10.1016/j.apsusc.2022.153983

Cited by 11 publications

(7 citation statements)

References 58 publications

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“…Figures 3(b) and (c) indicate the clear redshift in the frequency of A 2 g and A 3 g modes as the temperature increases. To fully understand and determine the temperature effect on phonons and magnon modes, we fitted the Raman shift as a function of temperature via the following model [45,46];…”

Section: Resultsmentioning

confidence: 99%

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Anisotropic phonon and magnon vibration and gate-tunable optoelectronic properties of nickel thiophosphite

et al. 2023

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Transition metal phosphorus trichalcogenides retain spin-charge coupling and lattice vibrations in different layers, which are useful for spintronic and optoelectronic devices. The phonon, magnons and excitonic properties of 2D ternary nickel-phosphorus trisulfides (NiPS3) are investigated using Raman spectroscopy and photoluminescence (PL) study. With magnetic exchange interaction, an exotic phonon scattering degenerates the optical phonons into in-plane Ag and Bg modes. We have observed eight Raman modes with two acoustic anisotropic magnon modes (M1, M2) below the critical temperature for co-(XX), while only M1 at cross (XY) polarizations. The M1 mode is coupled with phonon Bg mode that can survive after transition temperature. The phonon and magnon modes soften with temperature variation, which is attributed to anharmonic phonon-phonon coupling and interlayer forces. The polarized Raman shows the 2-fold and 4-fold symmetry orientation of phonon and magnon modes, respectively, which exhibits strong in-plane anisotropic phonon/magnon. The PL spectra revealed the existence of bound excitonic features and ensemble emitters in NiPS3. The robust interlayer excitation and structural stability further revealed the optothermal properties. Moreover, the fabricated field-effect transistor (FET) on NiPS3 reveals p-type semiconducting nature with an ON/OFF ratio~5×106 and mobility of~16.34 cm2V−1s−1, while the rectification ratio indicates their diode characteristics. Similarly, the photocurrent is enhanced by changing the wavelength of light, which shows the potential for optoelectronics. The strong spin-charge interaction provides new insights into these materials' magneto-optical and thermal properties for memory devices.

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Section: Resultsmentioning

confidence: 99%

“…Similarly, the linewidth as a function of temperature evolution for phonon modes is analyzed in figure 3(e). The linewidth data were further analyzed and fitted by Balkanski et al Model [46], as ascribed below:…”

Section: Resultsmentioning

confidence: 99%

Anisotropic phonon and magnon vibration and gate-tunable optoelectronic properties of nickel thiophosphite

et al. 2023

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“…silicon, [18] or layered vdW materials, e.g. MoS 2 , WS 2 , black phosphorus, and SnSe [26][27][28]. The observed temperature evolution of the E g and A 1g peak energies in HfS 2 is more complex.…”

Section: Discussionmentioning

confidence: 99%

“…a distorted orthorhombic structure (D 1 6 2h ), e.g. GeS, SnSe [28,34]. Due to the appearance of the Z peak at 5 K, we excluded the differential combination of phonons.…”

Section: Discussionmentioning

confidence: 99%

The effect of temperature and excitation energy on Raman scattering in bulk HfS2

Antoniazzi

Zawadzka

Grzeszczyk

et al. 2023

J. Phys.: Condens. Matter

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Raman scattering (RS) in bulk hafnium disulfide (HfS2) is investigated as a function of temperature (5 K − 350 K) with polarization resolution and excitation of several laser energies. An unexpected temperature dependence of the energies of the main Raman-active (A1g and Eg) modes with the temperature-induced blueshift in the low-temperature limit is observed. The low-temperature quenching of a mode ω1 (134 cm−1) and the emergence of a new mode at approx. 184 cm−1, labeled Z, is reported. The optical anisotropy of the RS in HfS2 is also reported, which is highly susceptible to the excitation energy. The apparent quenching of the A1g mode at T=5 K and of the Eg mode at T=300 K in the RS spectrum excited with 3.06 eV excitation is also observed. We discuss the results in the context of possible resonant character of light-phonon interactions. Analyzed is also a possible effect of the iodine molecules intercalated in the van der Waals gaps between neighboring HfS2 layers, which inevitably result from the growth procedure.

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“…10,12,49 Furthermore, van der Waals (vdW) heterojunctions synthesized by stacking two or more 2D layered materials (2DLMs) not only retain the properties of the individual 2D materials, but also exhibit more intriguing properties than the respective counterparts. 43 Recently, several 2DLMs and their heterostructures have been successfully utilized in memristive devices, for instance, graphene, 50 layered metal chalcogenides, 51,52 MXenes, 53 and various other 2D materials. 54 Wang et al 55 have discussed in detail the huge potential of 2DLMs in the development of low power and multifunctional neuromorphic devices, with respect to advancements in the device, chip and circuit levels.…”

Section: Introductionmentioning

confidence: 99%

Brain-inspired computing: can 2D materials bridge the gap between biological and artificial neural networks?

Singh,

Gupta

2024

Mater. Adv.

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Layered SnSe nanoflakes with anharmonic phonon properties and memristive characteristics

Cited by 11 publications

References 58 publications

Anisotropic phonon and magnon vibration and gate-tunable optoelectronic properties of nickel thiophosphite

Anisotropic phonon and magnon vibration and gate-tunable optoelectronic properties of nickel thiophosphite

The effect of temperature and excitation energy on Raman scattering in bulk HfS2

Brain-inspired computing: can 2D materials bridge the gap between biological and artificial neural networks?

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