Layered metal and highly doped MBE Si contacts for 4H-SiC power devices

Jennings, Michael R.; Pérez‐Tomás, Amador; Gammon, P. M.; Davis, M. C.; Chow, T. Paul; Mawby, P.A.

doi:10.1049/ic:20080185

9th International Seminar on Power Semiconductors (ISPS 2008) 2008

DOI: 10.1049/ic:20080185

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Layered metal and highly doped MBE Si contacts for 4H-SiC power devices

Michael R. Jennings¹,

Amador Pérez‐Tomás²,

P. M. Gammon³

et al.

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Layered metal and highly doped MBE Si contacts for 4H-SiC power devices

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