2017
DOI: 10.1021/acs.jpclett.7b02829
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Layered Halide Double Perovskites Cs3+nM(II)nSb2X9+3n (M = Sn, Ge) for Photovoltaic Applications

Abstract: Over the past few years, the development of lead-free and stable perovskite absorbers with excellent performance has attracted extensive attention. Much effort has been devoted to screening and synthesizing this type of solar cell absorbers. Here, we present a general design strategy for designing the layered halide double perovskites CsM(II)SbX (M = Sn, Ge) with desired photovoltaic-relevant properties by inserting [MX] octahedral layers, based on the principles of increased electronic dimensionality. Compare… Show more

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Cited by 83 publications
(61 citation statements)
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“…A temperature dependent change in peak shape and intensity followed by peak disappearance is observed in the resonant ultrasound spectroscopy (RUS) of (MA) 2 AgBiBr 6 ( Figure 15e). [175] They all show positive ∆H values. [185] The layered halide double perovskites, Cs 4 M (II) Sb 2 X 12 (M = Sn, Ge; X = I, Br, Cl) also present good thermodynamic stability.…”
Section: Wwwadvancedsciencenewscommentioning
confidence: 94%
“…A temperature dependent change in peak shape and intensity followed by peak disappearance is observed in the resonant ultrasound spectroscopy (RUS) of (MA) 2 AgBiBr 6 ( Figure 15e). [175] They all show positive ∆H values. [185] The layered halide double perovskites, Cs 4 M (II) Sb 2 X 12 (M = Sn, Ge; X = I, Br, Cl) also present good thermodynamic stability.…”
Section: Wwwadvancedsciencenewscommentioning
confidence: 94%
“…[83,89,90] Cortecchia et al studied the optoelectronic properties of MA 2 CuCl x Br 4−x hybrid perovskites as light harvesters in solar cells. [91,92] The low dimensional structure as well as the localized nature of split Cu 3d orbitals lead to fairly localized band edges and thus large carrier effective masses. It is seen that because of the +2 oxidation state of Cu, the conduction band is derived from the unoccupied Cu 3d orbitals hybridized with Br/Cl p orbitals.…”
Section: Tm(ii) and Iia(ii) Elementsmentioning
confidence: 99%
“…The feasibility of such an approach was probed by DFT calculations for Cs 3+ n M n Sb 2 X 9+3 n (M = Sn, Ge) compounds formed by inserting variable [SnI 6 ] or [GeI 6 ] octahedral layers into the [Sb 2 I 9 ] bilayers. It was found, in particular, that adjusting the thickness of the inserted octahedral layers is an effective approach to tune the bandgap and effective mass of the charge carriers over a broad range [209]. …”
Section: Reviewmentioning
confidence: 99%