Layer-Transferred GaN Template by Ion Cut for Nitride-Based Light-Emitting Diodes

Abstract

Layer transfer via ion-cut has been developed for GaN to fabricate multiple templates from a high-quality GaN wafer without compromising the crystallinity. Here, we report on the successful fabrication of 4-in. layer-transferred GaN on sapphire. A high quality epitaxial layer is also successfully grown despite the structural degradation in the transferred layer by hydrogen implantation. Fully packaged vertical light-emitting diodes grown on the template exhibit the peak external quantum efficiency of 48.6% and optical output power of 1.8 W at 220 A/cm2, suggesting that the template could serve as a low-cost substrate for high-performance nitride devices.

Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review

“…While, in many cases, the growth substrate is preserved after the chip fabrication, there are many occasions where the semiconductor layers need to be very thin (from nm to µm scale) and transferred to a different substrate by removing the growth substrate [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , …”

Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates

“…The ion-slicing of GaN has been reported. Wafer-scale GaN films have been transferred on sapphire substrates, on which the homoepitaxial growth of GaN active layer and the fabrication of LEDs have been demonstrated 14 – 17 . It is widely accepted that the surface blistering of GaN is sensitive to the ion implantation fluence and temperature as well as the annealing conditions 18 – 20 .…”

“…In comparison with the Raman spectra of virgin GaN, the peaks observed at 300 cm −1 and 360 cm −1 in the GaN film are defect-related modes induced by the implantation-induced damage. It has been evidenced that implanted H ions induce a damage zone in the near-surface region of the transferred film by the ion-cutting technique 17 . Since GaN is transparent to the visible light, the 514.5 nm laser is able to penetrate the GaN film.…”

Investigation of blistering process in H-implanted semipolar GaN

“…1c) [9]. The exfoliation depth is directly related to the location of nucleation and growth of HID complexes within the damage region [8,10,12], and therefore in SP GaN, h 112 is closer to the maximum H-concentration peak at $400 nm from the top of the surface (based on a stopping and ranges of ions in matter (SRIM) simulation) (see Fig. 1c).…”

“…To date, investigations on blistering and layer transfer in GaN have been carried out either in (0 0 0 1) orientated epitaxial layers or in (0 0 0 1) bulk substrates [10][11][12]. Note that most GaN-based devices are fabricated on polar (0 0 0 1) epitaxial GaN layers.…”