Investigation of blistering process in H-implanted semipolar GaN

Dadwal, U.; Buca, D.; Mantl, S.; Wernicke, T.; Singh, Rajendra

doi:10.1016/j.scriptamat.2014.09.007

Cited by 2 publications

(3 citation statements)

References 15 publications

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“…It is introduced into the material in different ways, e.g. by implantation [1,2,[10][11][12][13][14][15], mixed or in compounds with other gases employed to grow a given material in a plasma regime in the case of H [6,16,17]. Hydrogen and He are hardly soluble in most materials with the consequence that they tend to segregate into voids that grow and coalesce upon annealing with an ensuing increase of the gas pressure [14].…”

Section: Introductionmentioning

confidence: 99%

“…Hydrogen and He are hardly soluble in most materials with the consequence that they tend to segregate into voids that grow and coalesce upon annealing with an ensuing increase of the gas pressure [14]. The surface blistering of ion-implanted materials is still object of detailed research [1,10,[12][13][14]18]. As for semiconductors plenty of work has been carried out for H and/or He implanted materials especially with the aim to optimize the smart-cut technique based on wafer bonding [4,11,14,15,[18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

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Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x

Serényi

Frigeri²,

Schiller

2018

Journal of Alloys and Compounds

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Surface quality is a key issue in semiconductor structures for device applications. Typical surface defects are blisters. Here we investigate on the relationship between the activation energy of blistering and the composition x in hydrogenated amorphous a-Si x Ge 1-x by employing layers deposited by Radio Frequency sputtering. To this aim the blistering activation energy was determined by means of Arrhenius plots in several samples with different compositions, including x=0 and x=1. Each sample was submitted to heat treatment up to the temperature where the onset of blistering was observed by change of the surface reflectivity. It is found that a linear dependence of the activation energy on x similar to the Vegard's law holds. The experimental result is supported by reaction kinetics modeling. It is suggested that the key step for the formation of blisters is the scission of the SiH and GeH bonds. The related energetic reaction leading to the formation of H 2 molecules in a-Si x Ge 1-x follows a linear law as a function of the x composition similarly to the activation energy.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x

Serényi

Frigeri²,

Schiller

2018

Journal of Alloys and Compounds

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“…and Hayashi et al . 45 , 46 . After revoming the top damage layer, the ramained GaN film will retain the high quality of the bulk GaN.…”

Section: Introductionmentioning

confidence: 99%

Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates

Huang

Jia

You

et al. 2017

Sci Rep

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Die-to-wafer heterogeneous integration of single-crystalline GaN film with CMOS compatible Si(100) substrate using the ion-cutting technique has been demonstrated. The thermodynamics of GaN surface blistering is in-situ investigated via a thermal-stage optical microscopy, which indicates that the large activation energy (2.5 eV) and low H ions utilization ratio (~6%) might result in the extremely high H fluence required for the ion-slicing of GaN. The crystalline quality, surface topography and the microstructure of the GaN films are characterized in detail. The full width at half maximum (FWHM) for GaN (002) X-ray rocking curves is as low as 163 arcsec, corresponding to a density of threading dislocation of 5 × 107 cm−2. Different evolution of the implantation-induced damage was observed and a relationship between the damage evolution and implantation-induced damage is demonstrated. This work would be beneficial to understand the mechanism of ion-slicing of GaN and to provide a platform for the hybrid integration of GaN devices with standard Si CMOS process.

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Investigation of blistering process in H-implanted semipolar GaN

Cited by 2 publications

References 15 publications

Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x

Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x

Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates

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