Lattice parameters and thermal expansion of superconducting boron-doped diamonds

Brazhkin, V. V.; Екимов, Е. А.; Lyapin, A. G.; Попова, С. В.; Rakhmanina, A. V.; Stishov, S. M.; Лебедев, В. М.; Katayama, Yoshinori; Kato, Kenichi

doi:10.1103/physrevb.74.140502

Cited by 58 publications

(34 citation statements)

References 17 publications

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“…This has been found to follow the linear interpolation attributed to Vegard as long as the boron content was lower than 0.2 at.% in MPCVD epilayers (Brunet et al 1998;Bustarret et al 2003). Above those threshold concentrations, the expansion is less pronounced (Bustarret et al 2003;Brazhkin et al 2006). This lower expansion rate has been attributed to (i) the contribution of free holes (Bustarret et al 2003), (ii) the negative deformation potentials at the valence band maximum (Brunet et al 1998), and (iii) the occurrence of substitutional boron pairs (Brazhkin et al 2006) that are stabilized by p-type doping (Bourgeois et al 2006).…”

Section: Boron Incorporation At High Concentrationsmentioning

confidence: 89%

“…Above those threshold concentrations, the expansion is less pronounced (Bustarret et al 2003;Brazhkin et al 2006). This lower expansion rate has been attributed to (i) the contribution of free holes (Bustarret et al 2003), (ii) the negative deformation potentials at the valence band maximum (Brunet et al 1998), and (iii) the occurrence of substitutional boron pairs (Brazhkin et al 2006) that are stabilized by p-type doping (Bourgeois et al 2006). In homoepitaxial films, this expansion is severely limited in the film plane by pseudomorphic growth under compressive biaxial stress, but the boron-induced positive strain along the growth direction is easily detected in the double crystal X-ray diffraction curves (Kačmarčik et al 2005).…”

Section: Boron Incorporation At High Concentrationsmentioning

confidence: 99%

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Metal-to-insulator transition and superconductivity in boron-doped diamond

Bustarret

Achatz

Sacépé

et al. 2007

Phil. Trans. R. Soc. A.

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The experimental discovery of superconductivity in boron-doped diamond came as a major surprise to both the diamond and the superconducting materials communities. The main experimental results obtained since then on single-crystal diamond epilayers are reviewed and applied to calculations, and some open questions are identified. The critical doping of the metal-to-insulator transition (MIT) was found to coincide with that necessary for superconductivity to occur. Some of the critical exponents of the MIT were determined and superconducting diamond was found to follow a conventional type II behaviour in the dirty limit, with relatively high critical temperature values quite close to the doping-induced insulator-to-metal transition. This could indicate that on the metallic side both the electron-phonon coupling and the screening parameter depend on the boron concentration. In our view, doped diamond is a potential model system for the study of electronic phase transitions and a stimulating example for other semiconductors such as germanium and silicon.

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Section: Boron Incorporation At High Concentrationsmentioning

confidence: 89%

Section: Boron Incorporation At High Concentrationsmentioning

confidence: 99%

Metal-to-insulator transition and superconductivity in boron-doped diamond

Bustarret

Achatz

Sacépé

et al. 2007

Phil. Trans. R. Soc. A.

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“…The introduction of substitutional boron into diamond leads to an expansion (da/a) of the lattice parameter due to larger covalent radius of boron (r B ¼ 0.088 nm) compared to that of carbon (r C ¼ 0.077 nm); [25][26][27][28] for the maximum B concentration achieved (%7 Â 10 21 at/cm 3 ), the shift of the lattice parameter is about 0.3% (or 0.011Å ). 27 In the case of an isostatic stress, strain is da/a epilayer .…”

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confidence: 99%

“…27 In the case of an isostatic stress, strain is da/a epilayer . Here, it is assumed that all (i) epilayers are grown coherently on the substrate, i.e., (pseudomorphic growth) without misfit dislocations and (ii) epilayers are much thinner than the substrate, so that strain in the substrates can be neglected.…”

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confidence: 99%

Critical boron-doping levels for generation of dislocations in synthetic diamond

Alegre

Araújo

Fiori

et al. 2014

Applied Physics Letters

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International audienceDefects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH 4 /H 2 molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 10 20 at/cm 3 range in the <111> direction and at 3.2 10 21 at/cm 3 for the <001> one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism

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“…The transitions in two 13 C diamonds are shifted by about 500 mK to lower temperatures compared to two 12 C samples. To extract an isotope effect from this shift of T c , one should take into account the difference in boron doping, which can be calculated from experimentally determined values of the lattice parameters (table 1), and the dependence of T c on the lattice parameter [22]. We estimated T c due to a difference in boron doping as 0.25 K for samples 12 C-10 B and 13 C-10 B and 0.16 K for samples 12 C-11 B and 13 C-11 B.…”

Section: Isotope Effect On T Cmentioning

confidence: 99%

Structure and superconductivity of isotope-enriched boron-doped diamond

Екимов

Sidorov

Zoteev

et al. 2008

Science and Technology of Advanced Materials

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Superconducting boron-doped diamond samples were synthesized with isotopes of 10 B, 11 B, 13 C and 12 C. We claim the presence of a carbon isotope effect on the superconducting transition temperature, which supports the 'diamond-carbon'-related nature of superconductivity and the importance of the electron-phonon interaction as the mechanism of superconductivity in diamond. Isotope substitution permits us to relate almost all bands in the Raman spectra of heavily boron-doped diamond to the vibrations of carbon atoms. The 500 cm −1 Raman band shifts with either carbon or boron isotope substitution and may be associated with vibrations of paired or clustered boron. The absence of a superconducting transition (down to 1.6 K) in diamonds synthesized in the Co-C-B system at 1900 K correlates with the small boron concentration deduced from lattice parameters.

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Lattice parameters and thermal expansion of superconducting boron-doped diamonds

Cited by 58 publications

References 17 publications

Metal-to-insulator transition and superconductivity in boron-doped diamond

Metal-to-insulator transition and superconductivity in boron-doped diamond

Critical boron-doping levels for generation of dislocations in synthetic diamond

Structure and superconductivity of isotope-enriched boron-doped diamond

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