Lattice parameter and hole density of (Ga,Mn)As on GaAs(311)A

Daeubler, J.; Glunk, M.; Schoch, W.; Limmer, W.; Sauer, R.

doi:10.1063/1.2170408

Cited by 18 publications

(11 citation statements)

References 17 publications

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“…Such XRD lineshapes have been previously observed for (311)A and (311)B GaAs epilayers being attributed to excess As as a consequence of varying the growth temperatures and/or V:III flux ratios. 17,18 The mechanisms leading to an enhanced concentration of As Ga in (311)B GaAs and the effect it has on the RS are discussed later in detail.…”

Section: Resultsmentioning

confidence: 99%

Raman scattering studies of strain effects in (100) and (311)B GaAs1−xBix epitaxial layers

Steele

Lewis

Henini

et al. 2013

Journal of Applied Physics

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We report room-temperature Raman studies of strained (100) and (311)B GaAs1-xBix epitaxial layers for x ≤ 0.039. The Raman spectra exhibit a two-mode behavior, as well as disorder-activated GaAs-like phonons. The experimental results show that the GaAs-like LO(Γ) mode experiences a strong composition-dependent redshift as a result of alloying. The peak frequency decreases linearly from the value for pure GaAs (∼293 cm-1) with the alloyed Bi fraction x and the introduced in-plane lattice strain ε, by Δ ω LO = Δ ω alloy-Δ ω strain. X-ray diffraction measurements are used to determine x and ε allowing Δ ω alloy to be decoupled and is estimated to be-12(±4) cm-1/x for (100) GaAs1-xBix. Δ ω LO is measured to be roughly double for samples grown on (311)B-oriented substrates to that of (100) GaAs. This large difference in redshift is accounted for by examining the Bi induced strain, effects from alloying, and defects formed during high-index (311)B crystal growth. Raman scattering studies of strain effects in (100) and (311) We report room-temperature Raman studies of strained (100) and (311)B GaAs 1Àx Bi x epitaxial layers for x 0.039. The Raman spectra exhibit a two-mode behavior, as well as disorder-activated GaAs-like phonons. The experimental results show that the GaAs-like LO(C) mode experiences a strong composition-dependent redshift as a result of alloying. The peak frequency decreases linearly from the value for pure GaAs ($293 cm À1) with the alloyed Bi fraction x and the introduced in-plane lattice strain e k , by Dx LO ¼ Dx alloy À Dx strain . X-ray diffraction measurements are used to determine x and e k allowing Dx alloy to be decoupled and is estimated to be À12(64) cm À1

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Section: Resultsmentioning

confidence: 99%

Raman scattering studies of strain effects in (100) and (311)B GaAs1−xBix epitaxial layers

Steele

Lewis

Henini

et al. 2013

Journal of Applied Physics

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“…Further experimental details concerning the sample growth can be found in Refs. 22,23,24. The samples with high conductivities σ xx >180 Ω −1 cm −1 were obtained by postgrowth annealing for 1 h at 250 • C in air.…”

Section: Methodsmentioning

confidence: 99%

Scaling relation of the anomalous Hall effect in (Ga,Mn)As

et al. 2009

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We present magnetotransport studies performed on an extended set of (Ga,Mn)As samples at 4.2 K with longitudinal conductivities σxx ranging from the low-to the high-conductivity regime. The anomalous Hall conductivity σ (AH) xy is extracted from the measured longitudinal and Hall resistivities. A transition from σ (AH) xy = 20 Ω −1 cm −1 due to the Berry phase effect in the high-conductivity regime to a scaling relation σ (AH) xy ∝ σ 1.6 xx for low-conductivity samples is observed. This scaling relation is consistent with a recently developed unified theory of the anomalous Hall effect in the framework of the Keldysh formalism. It turns out to be independent of crystallographic orientation, growth conditions, Mn concentration, and strain, and can therefore be considered universal for low-conductivity (Ga,Mn)As. The relation plays a crucial role when deriving values of the hole concentration from magnetotransport measurements in low-conductivity (Ga,Mn)As. In addition, the hole diffusion constants for the high-conductivity samples are determined from the measured longitudinal conductivities.

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“…X-ray diffraction of ion-beam irradiated samples X-Ray Diffraction (XRD) is routinely used to characterize MBE-grown Ga 1−x Mn x As epilayers (e.g. [24][25][26] ). These measurements provide estimates for changes in lattice parameters relative to bulk GaAs and, therefore, for Mn content.…”

Section: Irradiation Processmentioning

confidence: 99%

Ion-beam modification of the magnetic properties ofGa1−xMnxAsepilayers

et al. 2010

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We study the controlled introduction of defects in GaMnAs by irradiating the samples with energetic ion beams, which modify the magnetic properties of the DMS. Our study focuses on the low-carrier-density regime, starting with as-grown GaMnAs films and decreasing even further the number of carriers, through a sequence of irradiation doses. We did a systematic study of magnetization as a function of temperature and of the irradiation ion dose. We also performed insitu room temperature resistivity measurements as a function of the ion dose. We observe that both magnetic and transport properties of the samples can be experimentally manipulated by controlling the ion-beam parameters. For highly irradiated samples, the magnetic measurements indicate the formation of magnetic clusters together with a transition to an insulating state. The experimental data are compared with mean-field calculations for magnetization. The independent control of disorder and carrier density in the calculations allows further insight on the individual role of this two factors in the ion-beam-induced modification of GaMnAs.

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Lattice parameter and hole density of (Ga,Mn)As on GaAs(311)A

Cited by 18 publications

References 17 publications

Raman scattering studies of strain effects in (100) and (311)B GaAs1−xBix epitaxial layers

Raman scattering studies of strain effects in (100) and (311)B GaAs1−xBix epitaxial layers

Scaling relation of the anomalous Hall effect in (Ga,Mn)As

Ion-beam modification of the magnetic properties ofGa1−xMnxAsepilayers

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