We systematically measured the dc voltage V(ISH) induced by spin pumping together with the inverse spin Hall effect in ferromagnet-platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, V(ISH) invariably has the same polarity, and scales with the magnetization precession cone angle. These findings, together with the spin mixing conductance derived from the experimental data, quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect.

General expressions for the longitudinal and transverse resistivities of single-crystalline cubic and tetragonal ferromagnets are derived from a series expansion of the resistivity tensor with respect to the magnetization orientation. They are applied to strained (Ga,Mn)As films, grown on (001)-and (113)A-oriented GaAs substrates, where the resistivities are theoretically and experimentally studied for magnetic fields rotated within various planes parallel and perpendicular to the sample surface. We are able to model the measured angular dependences of the resistivities within the framework of a single ferromagnetic domain, calculating the field-dependent orientation of the magnetization by numerically minimizing the free-enthalpy density. Angle-dependent magnetotransport measurements are shown to be a powerful tool for probing both anisotropic magnetoresistance and magnetic anisotropy. The anisotropy parameters of the (Ga,Mn)As films inferred from the magnetotransport measurements agree with those obtained by ferromagnetic resonance measurements within a factor of two.

We present a systematic study on the influence of epitaxial strain and hole concentration on the magnetic anisotropy in ͑Ga,Mn͒As at 4.2 K. The strain was gradually varied over a wide range from tensile to compressive by growing a series of ͑Ga,Mn͒As layers with 5% Mn on relaxed graded ͑In,Ga͒As/GaAs templates with different In concentration. The hole density, the Curie temperature, and the relaxed lattice constant of the as-grown and annealed ͑Ga,Mn͒As layers turned out to be essentially unaffected by the strain. Angledependent magnetotransport measurements performed at different magnetic-field strengths were used to probe the magnetic anisotropy. The measurements reveal a pronounced linear dependence of the uniaxial out-of-plane anisotropy on both strain and hole density. Whereas the uniaxial and cubic in-plane anisotropies are nearly constant, the cubic out-of-plane anisotropy changes sign when the magnetic easy axis flips from in-plane to out-of-plane. The experimental results for the magnetic anisotropy are quantitatively compared with calculations of the free energy based on a mean-field Zener model. Almost perfect agreement between experiment and theory is found for the uniaxial out-of-plane and cubic in-plane anisotropy parameters of the as-grown samples. In addition, magnetostriction constants are derived from the anisotropy data.

We report ferromagnetic resonance experiments on Ga1−xMnxAs thin films. For the dc magnetic field perpendicular to the sample plane, we observe up to eight distinct resonances, which we attribute to spin wave modes. To account for the spacing of the resonances, we infer a linear gradient in the magnetic properties, which is ascribed to a linear variation of the uniaxial magnetic anisotropy with film thickness. Values of D=(1±0.4)×10−9 Oe cm2 for the spin stiffness and JMnMn≈1 meV for the exchange integral between Mn spins are obtained.

We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo stress along its ͓110͔ direction, we quantify the magnetic anisotropy as a function of the voltage V p applied to the piezoelectric actuator using anisotropic magnetoresistance techniques. As the magnetic anisotropy in GaMnAs substantially changes as a function of temperature T, the ratio of the magnetoelastic and the magnetocrystalline anistropies can be tuned from approximately 1/4 to 4. Thus, GaMnAs/piezoelectric actuator hybrids are an ideal model system for the investigation of different piezoelastic magnetization control regimes. At T = 5 K the magnetoelastic term is a minor contribution to the magnetic anisotropy. Nevertheless, we show that the switching fields of ͑ 0 H͒ loops are shifted as a function of V p at this temperature. At 50 K-where the magnetoelastic term dominates the magnetic anisotropy-we are able to tune the magnetization orientation by about 70°solely by means of the electrical voltage V p applied. Furthermore, we derive the magnetostrictive constant 111 as a function of temperature and find values consistent with earlier results. We argue that the piezo voltage control of magnetization orientation is directly transferable to other ferromagnetic/piezoelectric hybrid structures, paving the way to innovative multifunctional device concepts. As an example, we demonstrate piezo voltageinduced irreversible magnetization switching at T = 40 K, which constitutes the basic principle of a nonvolatile memory element.