Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mo>(</mml:mo><mml:mn>113</mml:mn><mml:mo>)</mml:mo><mml:mi>A</mml:mi></mml:mrow></mml:math>-oriented<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mo>(</mml:mo><mml:mi>Ga</mml:mi><mml:mo>,</mml:mo><mml:mi>Mn</mml:mi><mml:mo>)</mml:mo><mml:mi>As</mml:mi></mml:mrow></mml:math>

Limmer, W.; Glunk, M.; Daeubler, J.; Hummel, Tim; Schoch, W.; Sauer, R.; Bihler, C.; Huebl, Hans; Brandt, Martin S.; Goennenwein, Sebastian T. B.

doi:10.1103/physrevb.74.205205

Cited by 83 publications

(101 citation statements)

References 29 publications

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“…The MA and AMR were investigated by angle-dependent magnetotransport measurements. In agreement with previous studies on (113)Aoriented (Ga,Mn)As, [8][9][10] we observe a uniaxial MA along the [001] direction, which can now be explained in the light of our theoretical model. Whereas the transverse resistivity parameters turn out to be nearly constant, a systematic dependence of the longitudinal resistivity parameters on the strength of the external magnetic field is found.…”

Section: Introductionsupporting

confidence: 92%

Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: Application to(113)A-oriented layers

et al. 2010

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Based on a detailed theoretical examination of the lattice distortion in high-index epilayers in terms of continuum mechanics, expressions are deduced that allow the calculation and experimental determination of the strain tensor for (hhl)-oriented (Ga,Mn)As layers. Analytical expressions are derived for the strain-dependent free-energy density and for the resistivity tensor for monoclinic and orthorhombic crystal symmetry, phenomenologically describing the magnetic anisotropy and anisotropic magnetoresistance by appropriate anisotropy and resistivity parameters, respectively. Applying the results to (113)A orientation with monoclinic crystal symmetry, the expressions are used to determine the strain tensor and the shear angle of a series of (113)A-oriented (Ga,Mn)As layers by high-resolution x-ray diffraction and to probe the magnetic anisotropy and anisotropic magnetoresistance at 4.2 K by means of angle-dependent magnetotransport. Whereas the transverse resistivity parameters are nearly unaffected by the magnetic field, the parameters describing the longitudinal resistivity are strongly field dependent.

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Section: Introductionsupporting

confidence: 92%

Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: Application to(113)A-oriented layers

et al. 2010

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“…5-10͔͒, much less is known about the magnetic microstructure and its impact on the magnetotransport properties of Heusler thin films. This is all the more surprising as the modeling of magnetoresistive effects such as TMR, giant magnetoresistance, 11,12 anisotropic magnetoresistance, 13 or the angle dependent magnetoresistance 14 are usually based on the assumption of a macrospin, i.e., a single-domain state.…”

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“…1 by optical lithography and Ar ion beam etching. Using angle dependent magnetoresistance 14 at room temperature, we determined that the sample shows dominantly cubic magnetic anisotropy in the film plane with easy axes ͑e.a.͒ along the crystalline ͓110͔ and ͓110͔ directions which are parallel and perpendicular to the main Hall bar ͑along y and x͒, respectively.…”

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Magnetic microstructure and magnetotransport in Co2FeAl Heusler compound thin films

Weiler

Czeschka

Brandlmaier

et al. 2011

Applied Physics Letters

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We correlate simultaneously recorded magnetotransport and spatially resolved magneto-optical Kerr effect ͑MOKE͒ data in Co 2 FeAl Heusler compound thin films micropatterned into Hall bars. Room temperature MOKE images reveal the nucleation and propagation of domains in an externally applied magnetic field and are used to extract a macrospin corresponding to the mean magnetization direction in the Hall bar. The anisotropic magnetoresistance calculated using this macrospin is in excellent agreement with magnetoresistance measurements. This suggests that the magnetotransport in Heusler compounds can be adequately simulated using simple macrospin models, while the magnetoresistance contribution due to domain walls is of negligible importance.

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“…6 Nevertheless, in many cases, the highorder terms are small and often neglected. 7,8 Here, we have conducted a series of experiments in epitaxially grown GaMnAs films and found a very strong fourfold magnetoresistance effect that is correlated with the crystalline symmetry of the films. This fourfold term is found to be connected to the long-range FM order below T C ; therefore, its temperature and field dependences reveal valuable information about the ferromagnetic ordering in the materials.…”

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High-field magnetocrystalline anisotropic resistance effect in (Ga,Mn)As

Peng

Johnston-Halperin

et al. 2008

Phys. Rev. B

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As the magnetization rotates in the ͑001͒ plane of epitaxial ͑Ga,Mn͒As films, we observe both two-and fourfold oscillations of comparable magnitude in the longitudinal resistivity. This behavior is different from the usual anisotropic magnetoresistance effect in polycrystalline films. The fourfold or cubic symmetry vanishes at the Curie temperature T C , indicating that it originates from the long-range ferromagnetic phase in single crystal films. In contrast, the twofold symmetry persists above T C , suggesting its origin to be from the alignment of spins with random orientations. However, the transverse, or planar Hall, resistivity only contains a twofold oscillation. The temperature dependence of the magnetocrystalline anisotropic resistance effect is explained by a two-component model. The anisotropic magnetoresistance ͑AMR͒ effect in ferromagnetic ͑FM͒ materials arises from the difference in the scattering rate when the magnetization direction is oriented parallel or perpendicular to an electrical current. 1 It is a convenient tool often used for characterizing the state of the magnetization in ferromagnetic metals 2 and semiconductors. 3,4 In ferromagnetic semiconductors such as GaMnAs, AMR has been linked to the intrinsic band structure properties in the presence of spin-orbit interaction. 5 For polycrystalline materials, the resistivity typically shows a twofold symmetry because the magnetocrystalline effect in the randomly oriented grains is averaged out. In single crystal films, however, also due to the spin-orbit interaction, AMR may contain higher-order terms that reflect the symmetry of the crystals. 6 Nevertheless, in many cases, the highorder terms are small and often neglected. 7,8 Here, we have conducted a series of experiments in epitaxially grown GaMnAs films and found a very strong fourfold magnetoresistance effect that is correlated with the crystalline symmetry of the films. This fourfold term is found to be connected to the long-range FM order below T C ; therefore, its temperature and field dependences reveal valuable information about the ferromagnetic ordering in the materials.We studied two Ga 1−x Mn x As samples with x = 0.039 and 0.059 which were grown on GaAs͑001͒ wafers at 250°C by molecular beam epitaxy in an As-rich environment. The samples were patterned into the standard Hall bar using photolithography and wet chemical etching. For resistivity measurements, the current flows along a ͓110͔ direction, as schematically shown in Fig. 1͑a͒, and both the longitudinal and transverse or the planar Hall dc resistivities xx and xy are measured simultaneously using the four-probe method. The measurements are performed in a superconducting magnet equipped with a rotating sample holder, which allows us to continuously change the angle between the magnetic field H and the electric current I, as illustrated in Fig. 1͑a͒. As the sample is rotated around ͓001͔, H always lies in the sample plane, and both xx and xy are recorded as angle is varied. The angular dependence is taken for different...

show abstract

Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and(113)A-oriented(Ga,Mn)As

Cited by 83 publications

References 29 publications

Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: Application to(113)A-oriented layers

Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: Application to(113)A-oriented layers

Magnetic microstructure and magnetotransport in Co2FeAl Heusler compound thin films

High-field magnetocrystalline anisotropic resistance effect in (Ga,Mn)As

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