Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: Application to<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>113</mml:mn></mml:mrow><mml:mo>)</mml:mo></mml:mrow><mml:mi>A</mml:mi></mml:mrow></mml:math>-oriented layers

Dreher, Lukas; Donhauser, D.; Daeubler, J.; Glunk, M.; Rapp, C.; Schoch, W.; Sauer, R.; Limmer, W.

doi:10.1103/physrevb.81.245202

Cited by 15 publications

(13 citation statements)

References 36 publications

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“…Magnetization curves indicate that the magnetic properties of the present structure are similar to those reported in previous studies of (Ga,Mn)As films grown on (311) GaAs substrates [12][13][14][15][16]. The experiments are performed in a cryostat with a superconducting magnet at temperature T = 6 K, well below the Curie temperature The picosecond strain pulses were generated by pulsed optical pump excitation of a 100 nm Al film deposited on the GaAs substrate, opposite to the (Ga,Mn)As layer.…”

supporting

confidence: 72%

Magnetization precession induced by quasitransverse picosecond strain pulses in (311) ferromagnetic (Ga,Mn)As

et al. 2013

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Quasi-longitudinal and quasi-transverse picosecond strain pulses injected into a ferromagnetic (311) (Ga,Mn)As film induce dynamical shear strain in the film, thereby modulating the magnetic anisotropy and inducing resonant precession of the magnetization at a frequency ~10 GHz. The modulation of the out-of-plane magnetization component by the quasitransverse strain reaches amplitudes as large as 10% of the equilibrium magnetization. Our theoretical analysis is in good agreement with the observed results, thus providing a strategy for ultrafast magnetization control in ferromagnetic films by strain pulses.

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confidence: 72%

Magnetization precession induced by quasitransverse picosecond strain pulses in (311) ferromagnetic (Ga,Mn)As

et al. 2013

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“…Until now, magnetic anisotropy in such films was probed at low temperatures by magnetoresistance, [19][20][21][22] scanning Hall probe microscopy, 23 and ferromagnetic resonance measurements. 21,24,25 Experimental techniques employed here include superconducting quantum interference device ͑SQUID͒ magnetometry, ferromagnetic resonance ͑FMR͒, and polar magnetooptical Kerr effect.…”

Section: Introductionmentioning

confidence: 99%

Magnetic anisotropy of epitaxial (Ga,Mn)As on(113)AGaAs

et al. 2010

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The temperature dependence of magnetic anisotropy in ͑113͒A ͑Ga,Mn͒As layers grown by molecular-beam epitaxy is studied by means of superconducting quantum interference device magnetometry as well as by ferromagnetic resonance ͑FMR͒ and magnetooptical effects. Experimental results are described considering cubic and two kinds of uniaxial magnetic anisotropy. The magnitude of cubic and uniaxial anisotropy constants is found to be proportional to the fourth and second power of saturation magnetization, respectively. Similarly to the case of ͑001͒ samples, the spin reorientation transition from uniaxial anisotropy with the easy axis along the ͓110͔ direction at high temperatures to the biaxial ͗100͘ anisotropy at low temperatures is observed around 25 K. The determined values of the anisotropy constants have been confirmed by FMR studies. As evidenced by investigations of the polar magnetooptical Kerr effect, the particular combination of magnetic anisotropies allows the out-of-plane component of magnetization to be reversed by an in-plane magnetic field. Theoretical calculations within the p-d Zener model explain the magnitude of the out-of-plane uniaxial anisotropy constant caused by epitaxial strain but do not explain satisfactorily the cubic anisotropy constant. At the same time the findings point to the presence of an additional uniaxial anisotropy of unknown origin. Similarly to the case of ͑001͒ films, this additional anisotropy can be explained by assuming the existence of a shear strain. However, in contrast to the ͑001͒ samples, this additional strain has an out of the ͑001͒ plane character.

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“…The origin of this anisotropy is still under discussion, but phenomenologically it can be modeled by a weak shear strain xy ε [27]. Thus, we write the general expression for the anisotropic part of the free energy density of a thin cubic FMS layer distorted by strain [25,28,29] …”

Section: Magnetization Precession Induced By a Strain Pulsementioning

confidence: 99%

Theory of magnetization precession induced by a picosecond strain pulse in ferromagnetic semiconductor (Ga,Mn)As

et al. 2011

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A theoretical model of the coherent precession of magnetization excited by a picosecond acoustic pulse in a ferromagnetic semiconductor layer of (Ga,Mn)As is developed. The short strain pulse injected into the ferromagnetic layer modifies the magnetocrystalline anisotropy resulting in a tilt of the equilibrium orientation of magnetization and subsequent magnetization precession. We derive a quantitative model of this effect using the Landau-Lifshitz equation for the magnetization that is precessing in the time-dependent effective magnetic field. After developing the general formalism, we then provide a numerical analysis for a certain structure and two typical experimental geometries in which an external magnetic field is applied either along the hard or the easy magnetization axis. As a result we identify three main factors, which determine the precession amplitude: the magnetocrystalline anisotropy of the ferromagnetic layer, its thickness, and the strain pulse parameters.

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Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: Application to(113)A-oriented layers

Cited by 15 publications

References 36 publications

Magnetization precession induced by quasitransverse picosecond strain pulses in (311) ferromagnetic (Ga,Mn)As

Magnetization precession induced by quasitransverse picosecond strain pulses in (311) ferromagnetic (Ga,Mn)As

Magnetic anisotropy of epitaxial (Ga,Mn)As on(113)AGaAs

Theory of magnetization precession induced by a picosecond strain pulse in ferromagnetic semiconductor (Ga,Mn)As

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