Lattice location and dopant behavior of group II and VI elements implanted in silicon

Gyulai, J.; Meyer, O.; Pashley, R.; Mayer, J. W.

doi:10.1080/00337577108232560

Cited by 29 publications

(7 citation statements)

References 7 publications

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“…6. The slope of the curve for the sample implanted with 4X 10 12 Te cm· 2 yields an activation energy of 140 meV, which agrees with the result of Te-doped bulk Si samples. 4 As also found in Fig.…”

Section: B Te-implanted Si Samplessupporting

confidence: 77%

“…4 x 10 14 Te/ cm 2 and the lowest was 30% for a dose of 1. 4 x 10 15 Te/ cm 2 • As pointed out previously, these results indicate that the low electrical activity of Te-implanted layers cannot be due entirely to nonsubstitutional Te.…”

supporting

confidence: 58%

“…The values of N. changed by about 10% throughout the quenching steps, but no systematic trend was noted. Therefore, we do not believe that the formation of Te substitutional clusters could account for the entire difference between the number of electrons/cm 2 2 , the activation energy is approximately equal to zero but the number of conduction electrons/ cm 2 is about 2 x 10 13 cm" 2 which is almost two orders of magnitude less than the number of implanted Te atoms. The upward curvature in the data for the high-dose sample caused by mobility weighting has been observed in other measurements on Te-implanted samples.…”

Section: B Te-implanted Si Samplesmentioning

confidence: 99%

“…The projected ranges for 100-and 220-keV tellurium implantation in silicon are 456 and 870 A, respectively .. 13 Ion doses ranged between 4 x 10 12 and 1. 4 x 10 15 cm- 2 • Ion implantations of phosphorus were made at energies between 7 and 190 keVand ion doses between 3X10 12 and 3X10 13 cm-2…”

Section: A Sample Preparationmentioning

confidence: 99%

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Investigation of tellurium−implanted silicon

Lee

Pashley

McGill

et al. 1975

Journal of Applied Physics

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Hall and sheet-resistivity measurements as a function of temperature combined with layer removal have been used to study Si implanted with Teat energies up to 220 keY. At low doses c::S: 4 X l 0 12 em--'), Te has a donor level with a 140-meV activation energy. The activation energy decreases at higher Te doses and is approximately equal to zero forTe doses<: I 0 15 cm-2 • At high dose levels, the number of conduction electrons per unit area N, is more than an order of magnitude below the number of Te per unit area. High-temperature anneal treatments followed by quenching did not produce a substantial increase in N, , suggesting that the formation of Te clusters was not responsible for the low value of N, . Also, channeling measurements indicated a high substitutional fraction. Based on differential Hall measurements on samples implanted with phosphorus, with and without Si predamage, we conclude that residual radiation damage is not a major factor. A theoretical calculation, which includes the effect of decrease of activation energy with increasing impurity concentrations, indicated that the number of conduction electrons could be much less than the number of implanted Te even though the apparent activation energy is almost zero. Although the results of theoretical calculation do not give quantitative agreement with the experimental results, they do confirm the changes in apparent activation energy with concentration.

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Section: B Te-implanted Si Samplessupporting

confidence: 77%

supporting

confidence: 58%

Section: B Te-implanted Si Samplesmentioning

confidence: 99%

Section: A Sample Preparationmentioning

confidence: 99%

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Investigation of tellurium−implanted silicon

Lee

Pashley

McGill

et al. 1975

Journal of Applied Physics

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“…Though diffusion doping of Zn in Si results in electrical activation by forming substitutional defects on Si lattice sites 7 , activation of the Zn + -implanted Si used here is not well characterized. For Zn + implantation doses above the amorphization threshold, Zn out-diffusion and Si recrystallization occur concurrently between 300°C and 500°C annealing 21,22 , and a significant fraction of Zn atoms remain on interstitial lattice sites throughout the process 22 . Although the Zn + doses used are below the amorphization threshold dose 23 of 3×10 14 cm -2 (see SI), Si lattice defects caused by implantation are expected to remain for annealing temperatures below 550°C 22 .…”

mentioning

confidence: 99%

Extrinsic photodiodes for integrated mid-infrared silicon photonics

Grote¹,

Souhan²,

Ophir³

et al. 2014

Optica

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While a number of Si waveguide (SiWG) integrated optoelectronic devices have been demonstrated in this wavelength range 8,9 , efficient photodetection remains an important and challenging task. Thus, spectral translation of mid-infrared signals to the telecom regime via four-wave mixing in SiWGs has been proposed for on-chip detection 10 , which makes use of the sensitive integrated photodiodes (PDs) in the telecommunications wavelength range 11 . However, this method requires a high-powered pump laser and long, on-chip-waveguide lengths to achieve efficient wavelength conversion. In addition, heterogeneous integration of both narrow-bandgap semiconductors 9,12-14 and graphene 15,16 with SiWGs has been demonstrated for on-chip mid-infrared detection. Though viable PDs have been demonstrated, 2 heterogeneous integration schemes present an inherent difficulty by imposing constraints on material quality and process integration. Extrinsic detectors, which utilize absorption transitions from dopant-induced trap states within the bandgap of a host material, present a simple solution for high-performance integrated mid-infrared PDs and alleviate the need for heterogeneous integration. These PDs can potentially be integrated into a standard CMOS process flow by adding an ion implantation and annealing step after activation of the source and drain implants, and prior to the deposition of back-end dielectrics and interconnect metallization.Alternatively, this additional fabrication step can be performed as a post-process, as is done here (see Methods). The Si dopants used in bulk photoconductors can potentially be integrated for detection from a range of wavelengths from 1.5 μm to greater than 25 µm (Fig. 1a) ). Subsequent to implantation, the PDs were annealed in atmosphere for a series of increasing temperatures, reaching a maximum of 350°C, and the responsivity was found to increase with annealing temperature.The detection mechanism of our p-Si:Zn-n PDs is due to substitutional Zn atoms in the Si lattice, which act as a double-acceptors and result in the two defect levels ( Fig. 2a) with energy levels of Ed1 ≈ Ev + 0.3 eV and Ed2 ≈ Ev + 0.58 eV 5,6 . While the position of the Fermi level in the Si:Zn region is not known, the excess carrier concentration is below that of the p and n regions, ensuring that the Si:Zn region will be fully depleted with the application of a reverse bias voltage. Photon-induced transitions occurs between Ed2 and the conduction band, which corresponds to a transition energy of Eg -Ed2 = 1.12eV -0.58eV = 0.54eV with a peak absorption wavelength of ≈ 2.3 µm. Photocurrent generation due to this transition is shown to 4 be a single-photon process by the linearity measurements in Fig. 2b. The presence of Ed1 does not contribute to photocurrent generation in the wavelength range of interest; however, its presence should impact the thermally assisted re-population rate of Ed2 and thus the internal quantum efficiency, ηi, of the PD. The responsivity, defined as R = Iph/Pin, where Iph is the photocu...

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