Investigation of tellurium−implanted silicon

Abstract

Hall and sheet-resistivity measurements as a function of temperature combined with layer removal have been used to study Si implanted with Teat energies up to 220 keY. At low doses c::S: 4 X l 0 12 em--'), Te has a donor level with a 140-meV activation energy. The activation energy decreases at higher Te doses and is approximately equal to zero forTe doses<: I 0 15 cm-2 • At high dose levels, the number of conduction electrons per unit area N, is more than an order of magnitude below the number of Te per unit area. High-temperature anneal treatments followed by quenching did not produce a substantial increase in N, , suggesting that the formation of Te clusters was not responsible for the low value of N, . Also, channeling measurements indicated a high substitutional fraction. Based on differential Hall measurements on samples implanted with phosphorus, with and without Si predamage, we conclude that residual radiation damage is not a major factor. A theoretical calculation, which includes the effect of decrease of activation energy with increasing impurity concentrations, indicated that the number of conduction electrons could be much less than the number of implanted Te even though the apparent activation energy is almost zero. Although the results of theoretical calculation do not give quantitative agreement with the experimental results, they do confirm the changes in apparent activation energy with concentration.

Effect of Electrode Roughness on Electroforming inHfO2and Defect-Induced Moderation of Electric-Field Enhancement

“…11(a)]. This assumption is based on fact that the conducting filament is equivalent to a highly doped semiconductor, where the Fermi level is very close or even above the conduction or valance band [55,57]. The preexponential factor for insulating HfO 2 is taken as σ o ¼ 10 −6 Ω −1 cm −1 and that of the metallic filament as σ o ¼ 10 4 Ω −1 cm −1 at n D ¼ 6 × 10 22 cm −3 as shown in Fig.…”