Lattice deformation of ZnO films with high nitrogen concentration

Park, S.H.; Chang, Jiho; Ko, Hang-Ju; Minegishi, Tsutomu; Park, J.S.; Im, Il; Ito, Masahiko; Oh, D. C.; Cho, M.W.; Yao, Takafumi

doi:10.1016/j.apsusc.2008.04.047

Cited by 21 publications

(13 citation statements)

References 23 publications

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“…Low dopant incorporation at higher growth temperatures has previously been observed with N doping of ZnO via PAMBE as well. 22,23 High doping concentration can have significant effects on thin film growth, and this is evident in the SEM and RHEED images of Fig. 1.…”

Section: Resultsmentioning

confidence: 90%

Identification of a Deep Acceptor Level in ZnO Due to Silver Doping

Chai

Mendelsberg

Reeves

et al. 2009

Journal of Elec Materi

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There remains considerable interest in the behavior of acceptors in ZnO, the ultimate goal being the realization of device grade p-type material. Silver is a candidate acceptor, and, in this study, in situ doping of silver was performed during plasma-assisted molecular beam epitaxy. Silver concentrations, as determined by ion beam analysis, ranged between 10 18 cm À3 and 10 20 cm À3 , with as much as 94% incorporated substitutionally on Zn lattice sites. Variable magnetic field Hall effect measurements detected no evidence of holes, and 4 K photoluminescence was dominated by donor bound excitons. Transient capacitance measurements, however, suggested that incorporated silver had led to the formation of an acceptor, located approximately 320 meV above the valence band edge, indicating that compensation remains a significant issue in determining the conductivity of ZnO.

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Section: Resultsmentioning

confidence: 90%

Identification of a Deep Acceptor Level in ZnO Due to Silver Doping

Chai

Mendelsberg

Reeves

et al. 2009

Journal of Elec Materi

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“…Compared with the undoped ZnO film, the intensity of the (0 0 2) peak is lower for the N doped ZnO film. This may be due to the incorporation of N dopant into the ZnO film being able to create more defects in the lattice [15].…”

Section: Photoelectrochemical (Pec) Characterizationmentioning

confidence: 99%

Investigation of structural, optical and luminescent properties of sprayed N-doped zinc oxide thin films

Shinde

et al. 2012

Journal of Analytical and Applied Pyrolysis

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“…The growth rate of (0 0 0 1) ZnO is 1.7 times faster than that of the (0 0 0 1 ) ZnO film due to the three dangling bonds configuration of Zn face [18]. Details of the growth were reported elsewhere [19]. Finally, nitrogen doping was performed for both faces at elevated growth temperature from 300 to 800 1C.…”

Section: Methodsmentioning

confidence: 99%