Lattice contraction with boron doping in fully strained SiGe epitaxial layers

Shin, Keun Wook; Song, Sung-Chan; Kim, Hyun Woo; Lee, Gun-Do; Yoon, Euijoon

doi:10.7567/jjap.57.065504

Cited by 8 publications

(6 citation statements)

References 26 publications

(48 reference statements)

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“…The value of the latter, which should be most useful to assess compressive strain compensation by small boron atoms in SiGe layers, was compared to literature values in Figure 18. As already shown by Shin et al (16) and verified here, the β value for SiGe:B layers seems two times higher than in Si:B and does not seem to evolve for xGe between 0.13 and 0.26. The different types of strain in Si:B and SiGe:B lattices could explain such a difference.…”

Section: Ecs Transactions 109 (4) 217-236 (2022)supporting

confidence: 86%

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Reduced Pressure – Chemical Vapor Deposition of Monocrystalline and Polycrystalline Si(:B) and SiGe(:B) Layers on Blanket Wafers

Lespiaux¹,

Deprat²,

Vives³

et al. 2022

ECS Trans.

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In this paper, epitaxial growths or depositions were performed, in 300 mm RP-CVD chambers, on two types of templates: N-type Si substrates or poly-Si/oxide/ P-type Si substrates. SiH4+HCl+H2 and SiH2Cl2+HCl+GeH4+H2 chemistries were used to deposit Si and SiGe layers between 675-750°C and 10-20 Torr on such wafers. Monocrystalline and polycrystalline growth kinetics were similar for intrinsic SiGe. Meanwhile, growth kinetics and boron incorporation were different for mono-Si:B, mono-SiGe:B, poly-Si:B and poly-SiGe:B layers. While the impact of B atoms is well documented in monocrystalline layers, it is still poorly understood for polycrystalline layers. An attempt has therefore been made to quantify it by measuring the poly-structure, with a focus on the poly-grains size and the number of grain boundaries. A lattice contraction coefficient β = - 9.82 * 10-24 cm3 has otherwise been extracted from an in-depth study of the incorporation of B atoms into substitutional sites of the SiGe epitaxial lattice.

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Section: Ecs Transactions 109 (4) 217-236 (2022)supporting

confidence: 86%

“…This might be a reason as to why β is higher in SiGe:B than in Si:B. According to Shin et al (16), B atoms would have stronger bonds with atoms in a SiGe lattice than in a Si lattice.…”

Section: Ecs Transactions 109 (4) 217-236 (2022)mentioning

confidence: 98%

Reduced Pressure – Chemical Vapor Deposition of Monocrystalline and Polycrystalline Si(:B) and SiGe(:B) Layers on Blanket Wafers

Lespiaux¹,

Deprat²,

Vives³

et al. 2022

ECS Trans.

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“…x y x y 1 [24], the compositional dependence of the lattice parameters and the elastic constants has been extensively researched using x-ray diffraction, secondary ion mass spectroscopy, and Rutherford backscattering. Similarly, the lattice parameters of Si:B [11,14,15,[25][26][27][28][29], Si:Ga [30], and SiGe:B [10,31] with low dopant concentrations have also been studied. However, the impact of B, Al, and Ga doping of Si on materials properties such as lattice parameters, bonding, and elastic properties is not yet thoroughly understood.…”

Section: Simentioning

confidence: 99%

Structural, bonding, and elastic properties of Si:X (X = B, Al, and Ga): a theoretical study

Lee

Ko³

2020

Semicond. Sci. Technol.

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Extremely high doping has recently been used in electrical and optical applications of semiconductor devices, but advances in doping have been hindered by poor understanding of their fundamental properties. Here, we present a theoretical study to resolve the structural, bonding, and elastic properties of Si:X alloys (X=B, Al, and Ga). Density functional theory calculations revealed the structural distortion caused by the substitutional incorporation of group IIIA elements into the Si host lattices, thus allowing an accurate comparison of both their bonding length and lattice parameters with previous experimental values. The change of atomic structure and bonding characteristics when incorporating group IIIA elements was investigated using Bader volume and charge density analyses. Furthermore, elastic properties were studied to understand the elastic behavior and the pseudomorphic growth of Si 1−x B y , Si 1−x Al y , and Si 1−x Ga y on Si, yielding a perpendicular lattice parameter in the growth direction. Finally, from a detailed analysis of the lattice parameters of Si 1−x−y Ge x B y , we found that the tensile strain caused by 8.4 atom% Ge can be compensated by adding 1 atom% B in pseudomorphic Si 1−x−y Ge x B y films. Our findings highlight the effect of doping on material properties and may open up opportunities for the design of doped semiconductor devices based on doping and epitaxial growth results.

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“…Boron is the most used p-type dopant for Si and Si1-xGex and it has been extensively explored (9,10,11). Because of its smaller ionic radius compared to Si and Ge, when placed in a substitutional position in the lattice, B is responsible for a partial stress release in pseudomorphic Si1-xGex layers on Si substrate (17,18). Thanks to this effect and to lowtemperature deposition processes with high growth rates, it is possible to achieve active B concentrations as high as 110 21 atoms/cm -3 in strained Si1-xGex (11).…”

Section: Introductionmentioning

confidence: 99%

(Invited) Highly Doped Si_1-XGe_x Epitaxy in View of S/D Applications

et al. 2020

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This contribution focuses on S/D epitaxial layers grown and in-situ doped by chemical vapor deposition, and on the properties of fabricated Ti/p-Si1-xGex contacts. The Ti/Si1-xGex:B contact resistivity and the Si1-xGe1-x:B layer resistivity are both minimized for an optimized range of layer thickness. Both parameters increase as the layer relaxes. Preserving strain in Si1-xGex:B S/D material is therefore important. The increase in S/D layer resistivity and contact resistivity with increasing layer thickness is, however, not caused by the (small) increase in electrical band gap induced by (partial) layer relaxation. Instead, B incorporation during epitaxial growth is affected by the initiation of layer relaxation and decreases with increasing degree of strain relaxation. This effect is observed for the whole range of Ge concentrations. The reduced B incorporation results in a lower carrier concentration near the layer surface which, in-turn, explains the increase in contact resistivity and layer resistivity.

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Lattice contraction with boron doping in fully strained SiGe epitaxial layers

Cited by 8 publications

References 26 publications

Reduced Pressure – Chemical Vapor Deposition of Monocrystalline and Polycrystalline Si(:B) and SiGe(:B) Layers on Blanket Wafers

Reduced Pressure – Chemical Vapor Deposition of Monocrystalline and Polycrystalline Si(:B) and SiGe(:B) Layers on Blanket Wafers

Structural, bonding, and elastic properties of Si:X (X = B, Al, and Ga): a theoretical study

(Invited) Highly Doped Si_1-XGe_x Epitaxy in View of S/D Applications

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Lattice contraction with boron doping in fully strained SiGe epitaxial layers

Cited by 8 publications

References 26 publications

Reduced Pressure – Chemical Vapor Deposition of Monocrystalline and Polycrystalline Si(:B) and SiGe(:B) Layers on Blanket Wafers

Reduced Pressure – Chemical Vapor Deposition of Monocrystalline and Polycrystalline Si(:B) and SiGe(:B) Layers on Blanket Wafers

Structural, bonding, and elastic properties of Si:X (X = B, Al, and Ga): a theoretical study

(Invited) Highly Doped Si1-XGex Epitaxy in View of S/D Applications

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Product

Resources

About

(Invited) Highly Doped Si_1-XGe_x Epitaxy in View of S/D Applications