Lateral β-Ga₂O₃ MOSFETs With High Power Figure of Merit of 277 MW/cm²

β-Ga2O3 material properties, growth technologies, and devices: a review

“…The field plate successfully contributed to a large enhancement of V br to ∼750 V without any degradation of on-state device characteristics from those of the D-mode MOSFETs. The field-plated MOSFETs also exhibited no DC-RF dispersion by virtue of the effect of the thick SiO 2 passivation and high operation stability up to 300 • C. Due to the continued development, the V br of lateral β-Ga 2 O 3 field-plated MOSFETs has increased to over 2 kV [89,90]. From the material properties typified by the large E g , β-Ga 2 O 3 is expected to have high resistance against stresses caused by high temperature, radiation, and corrosive gases, as well as being suited for power devices.…”

Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band

“…B ETA-PHASE gallium oxide (β-Ga 2 O 3 ) metal-oxidesemiconductor field-effect transistors (MOSFETs) are promising power devices due to high projected critical field strength, E crit , of ∼8MV/cm [1], [2] and experimental E crit of >3.8 MV/cm [3]. Most β-Ga 2 O 3 devices have been reported so far with excellent power switch figures of merit (FoM) [4]- [6], but it has also been noted that high E crit allows for aggressive scaling of devices which can lead to a high RF FoM for β-Ga 2 O 3 [7]. Early β-Ga 2 O 3 RF devices have been reported with RF power gain up to nearly 20 GHz using small signal measurements [8], [9] and with limited gain in large-signal results up to 1 GHz [10], [11].…”

High‐Quality Bulk β‐Ga2O3 and β‐(AlxGa1−x)2O3 Crystals: Growth and Properties

“…[ 3 ] In terms of bandgap, it is second only to AlN, AlGaN, and diamond. To date, samples of metal–oxide–semiconductor field‐effect transistors (MOSFETs) based on β‐Ga 2 O 3 have already been demonstrated with record values of characteristics (breakdown voltage 800−1400 V) [ 4,5 ] unattainable for systems based on GaN and SiC. These qualities, as well as transparency in the ultraviolet and visible ranges, make this material very effective for use in power and optoelectronics.…”